A high voltage SOI pLDMOS with a partial interface equipotential floating buried layer

Lijuan Wu, Wentong Zhang, Bo Zhang, Zhaoji Li

doi: 10.1088/1674-4926/34/7/074009

key words: FBL, SOI, ENDIF, pLDMOS, R_{on, sp}

A novel SOI high-voltage SJ-pLDMOS based on self-adaptive charge balance

Lijuan Wu, Wentong Zhang, Bo Zhang, Zhaoji Li

doi: 10.1088/1674-4926/35/2/024004

key words: self-adaptive charge, self-balance, charge balance, super-junction, substrate-assisted depletion

Concept and design of super junction devices

Bo Zhang, Wentong Zhang, Ming Qiao, Zhenya Zhan, Zhaoji Li

doi: 10.1088/1674-4926/39/2/021001

key words: super junction, silicon limit, power semiconductor device, design theory