Improvements on high voltage capacity and high temperature performances of Si-based Schottky potential barrier diode

Yongshun Wang, Li Rui, Adnan Ghaffar, Zaixing Wang, Chunjuan Liu

doi: 10.1088/1674-4926/36/2/024013

key words: Schottky potential barrier diode, breakdown voltage, I—V characteristics, NiPt60 sputtering, junction temperature

Substrate temperature effects on the structural and photoelectric properties of ZnS:In films

Wenjian Li, Jinhuo Chen, Shuying Cheng, Yongshun Wang

doi: 10.1088/1674-4926/35/2/023001

key words: ZnS, indium, evaporation, photoelectric properties, substrate temperature

Physical effect of carrier distribution in the channel of static induction thyristor

Chunjuan Liu, Zaixing Wang, Yongshun Wang

doi: 10.1088/1674-4926/35/8/084005

key words: static induction thyristor, carrier distribution, potential barrier, space charge distribution