Towards engineering in memristors for emerging memory and neuromorphic computing: A review
Andrey S. Sokolov, Haider Abbas, Yawar Abbas, Changhwan Choi
doi: 10.1088/1674-4926/42/1/013101
key words: RRAM, memristor, emerging memories, neuromorphic computing, electronic synapse, resistive switching, memristor engineering
Unipolar resistive switching of Au+-implanted ZrO2 films
Liu Qi, Long Shibing, Guan Weihua, Zhang Sen, Liu Ming, Chen Junning
doi: 10.1088/1674-4926/30/4/042001
key words: RRAM
Resistive random access memory and its applications in storage and nonvolatile logic
Dongbin Zhu, Yi Li, Wensheng Shen, Zheng Zhou, Lifeng Liu, Xing Zhang
doi: 10.1088/1674-4926/38/7/071002
key words: RRAM, memory, nonvolatile logic, metal-oxide, resistive switching
Effects of interaction between defects on the uniformity of doping HfO2-based RRAM:a first principle study
Qiang Zhao, Maoxiu Zhou, Wei Zhang, Qi Liu, Xiaofeng Li, Ming Liu, Yuehua Dai
doi: 10.1088/1674-4926/34/3/032001
key words: RRAM, hafnium oxide, localized effect, oxygen vacancy, DFT
A long lifetime, low error rate RRAM design with self-repair module
Zhiqiang You, Fei Hu, Liming Huang, Peng Liu, Jishun Kuang, Shiying Li
doi: 10.1088/1674-4926/37/11/115004
key words: self-repair, ECC, RRAM, memristor
Metal dopants in HfO2-based RRAM:first principle study
Yuanyang Zhao, Jiayu Wang, Jianbin Xu, Fei Yang, Qi Liu, Yuehua Dai
doi: 10.1088/1674-4926/35/4/042002
key words: RRAM, metal dopant, conduction filament, interstitial, substitutional
Optimal migration route of Cu in HfO2
Jinlong Lu, Jing Luo, Hongpeng Zhao, Jin Yang, Xianwei Jiang, Qi Liu, Xiaofeng Li, Yuehua Dai
doi: 10.1088/1674-4926/35/1/013001
key words: HfO2, RRAM, Cu migration, lattice orientation, migration speed
Physical mechanism of resistance switching in the co-doped RRAM
Jin Yang, Yuehua Dai, Shibin Lu, Xianwei Jiang, Feifei Wang, Junning Chen
doi: 10.1088/1674-4926/38/1/014008
key words: RRAM, resistive switching, co-doped, conductive path, physical mechanism
