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  • Towards engineering in memristors for emerging memory and neuromorphic computing: A review

    Andrey S. Sokolov, Haider Abbas, Yawar Abbas, Changhwan Choi

    doi: 10.1088/1674-4926/42/1/013101

    key words: RRAM, memristor, emerging memories, neuromorphic computing, electronic synapse, resistive switching, memristor engineering

  • Memristor interpretations based on constitutive relations

    Wei Wu, Ning Deng

    doi: 10.1088/1674-4926/38/10/104005

    key words: memristor, magnetic flux, constitutive relation, pinched hysteresis loop

  • Memristive SRAM cell of seven transistors and one memristor

    Patrick W. C. Ho, Haider Abbas F. Almurib, T. Nandha Kumar

    doi: 10.1088/1674-4926/37/10/104002

    key words: memristor, memristive SRAM cell, EDAP, non-volatile memory cell

  • Electro-magnetic interpretation of four-element torus

    Wei Wu, Ning Deng

    doi: 10.1088/1674-4926/38/11/114008

    key words: electro-magnetic interpretation, four-element torus, memristor, quasi-static expansion of Maxwell’s equations

  • Comparative analysis of memristor models and memories design

    Jeetendra Singh, Balwinder Raj

    doi: 10.1088/1674-4926/39/7/074006

    key words: memristor, modeling, window function, nonlinear, non-volatile memory

  • A long lifetime, low error rate RRAM design with self-repair module

    Zhiqiang You, Fei Hu, Liming Huang, Peng Liu, Jishun Kuang, Shiying Li

    doi: 10.1088/1674-4926/37/11/115004

    key words: self-repair, ECC, RRAM, memristor

  • Memory characteristics of microcavity dielectric barrier discharge

    Yanzhou Sun, Xiaoqian Liu, Dati Su, Huibin Yang

    doi: 10.1088/1674-4926/39/11/114008

    key words: microcavity dielectric barrier discharge, memristor, I–V characteristic, memory characteristics

  • Voltage-dependent plasticity and image Boolean operations realized in a WO x-based memristive synapse

    Jiajuan Shi, Ya Lin, Tao Zeng, Zhongqiang Wang, Xiaoning Zhao, Haiyang Xu, Yichun Liu

    doi: 10.1088/1674-4926/42/1/014102

    key words: memristor, artificial synapse, short-term plasticity, long-term potentiation, image Boolean operations

  • Multiply accumulate operations in memristor crossbar arrays for analog computing

    Jia Chen, Jiancong Li, Yi Li, Xiangshui Miao

    doi: 10.1088/1674-4926/42/1/013104

    key words: analog computing, memristor, multiply accumulate (MAC) operation, neural network, numerical computing

  • Modelling of nanostructured TiO2-based memristors

    S. S. Shinde, T. D. Dongle

    doi: 10.1088/1674-4926/36/3/034001

    key words: memristor, linear drift model, TiO2

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