An analysis of the dynamic avalanche mechanism of an improved FCE diode with a deep p⁺ adjusting region

Cailin Wang, Lei Zhang

doi: 10.1088/1674-4926/36/4/044006

key words: power semiconductor device, FSRD, softness, dynamic avalanche

Concept and design of super junction devices

Bo Zhang, Wentong Zhang, Ming Qiao, Zhenya Zhan, Zhaoji Li

doi: 10.1088/1674-4926/39/2/021001

key words: super junction, silicon limit, power semiconductor device, design theory