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  • Towards engineering in memristors for emerging memory and neuromorphic computing: A review

    Andrey S. Sokolov, Haider Abbas, Yawar Abbas, Changhwan Choi

    doi: 10.1088/1674-4926/42/1/013101

    key words: RRAM, memristor, emerging memories, neuromorphic computing, electronic synapse, resistive switching, memristor engineering

  • Resistive random access memory and its applications in storage and nonvolatile logic

    Dongbin Zhu, Yi Li, Wensheng Shen, Zheng Zhou, Lifeng Liu, Xing Zhang

    doi: 10.1088/1674-4926/38/7/071002

    key words: RRAM, memory, nonvolatile logic, metal-oxide, resistive switching

  • Physical mechanism of resistance switching in the co-doped RRAM

    Jin Yang, Yuehua Dai, Shibin Lu, Xianwei Jiang, Feifei Wang, Junning Chen

    doi: 10.1088/1674-4926/38/1/014008

    key words: RRAM, resistive switching, co-doped, conductive path, physical mechanism

  • Influence of oxygen doping on resistive-switching characteristic of a-Si/c-Si device

    Jiahua Zhang, Da Chen, Shihua Huang

    doi: 10.1088/1674-4926/38/12/122003

    key words: amorphous silicon, resistive switching, oxygen doping

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