高阻衬底上具有n＋浮空层的横向Super Junction MOSFETs

Duan Baoxing, Zhang Bo, Li Zhaoji

key words: super junction, LDMOST, substrate-assisted depletion, n+-floating layer, breakdown voltage

具有部分n埋层的高压SJ-LDMOS器件新结构

Chen Wanjun, Zhang Bo, Li Zhaoji

key words: super junction, LDMOS, breakdown voltage, substrate-assisted depletion effect

A novel high figure-of-merit SOI SJ LDMOS with ultra-strong charge accumulation effect

Ruichao Tian, Xiaorong Luo, Kun Zhou, Qing Xu, Jie Wei, Bo Zhang, Zhaoji Li

doi: 10.1088/1674-4926/36/3/034007

key words: charge accumulation effect, super junction, breakdown voltage, specific on-resistance

Concept and design of super junction devices

Bo Zhang, Wentong Zhang, Ming Qiao, Zhenya Zhan, Zhaoji Li

doi: 10.1088/1674-4926/39/2/021001

key words: super junction, silicon limit, power semiconductor device, design theory

Super junction LDMOS with enhanced dielectric layer electric field for high breakdown voltage

Wang Wenlian, Zhang Bo, Li Zhaoji

doi: 10.1088/1674-4926/32/2/024002

key words: super junction, LDMOS, substrate-assisted depletion effect