Journal of Semiconductors

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Volume 8, Issue 6, Jun 1987

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CONTENTS

一维超晶格的子能带和光跃迁

夏建白, 黄昆

Chin. J. Semicond. 1987, 8(6): 563-573

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1987, 8(6): 563.

夏建白, 黄昆. 一维超晶格的子能带和光跃迁[J]. Chin. J. Semicond., 1987, 8(6): 563..Export: BibTex EndNote

夏建白, 黄昆. 一维超晶格的子能带和光跃迁[J]. Chin. J. Semicond., 1987, 8(6): 563...

超晶格电子结构的赝势计算

夏建白, A.Baldereschi

Chin. J. Semicond. 1987, 8(6): 574-584

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1987, 8(6): 574.

夏建白, A.Baldereschi. 超晶格电子结构的赝势计算[J]. Chin. J. Semicond., 1987, 8(6): 574..Export: BibTex EndNote

夏建白, A.Baldereschi. 超晶格电子结构的赝势计算[J]. Chin. J. Semicond., 1987, 8(6): 574...

适用于VLSI CAD的非均匀掺杂小尺寸MOSFET阈值电压模型

王建伟, 阮刚

Chin. J. Semicond. 1987, 8(6): 585-596

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1987, 8(6): 585.

王建伟, 阮刚. 适用于VLSI CAD的非均匀掺杂小尺寸MOSFET阈值电压模型[J]. Chin. J. Semicond., 1987, 8(6): 585..Export: BibTex EndNote

王建伟, 阮刚. 适用于VLSI CAD的非均匀掺杂小尺寸MOSFET阈值电压模型[J]. Chin. J. Semicond., 1987, 8(6): 585...

漏轻掺杂MOSFET的特性分析及其解析模型

谢连生, 陈学良, 徐元森

Chin. J. Semicond. 1987, 8(6): 597-603

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1987, 8(6): 597.

谢连生, 陈学良, 徐元森. 漏轻掺杂MOSFET的特性分析及其解析模型[J]. Chin. J. Semicond., 1987, 8(6): 597..Export: BibTex EndNote

谢连生, 陈学良, 徐元森. 漏轻掺杂MOSFET的特性分析及其解析模型[J]. Chin. J. Semicond., 1987, 8(6): 597...

用于宏单元阵列的自动布局算法

于泓涛, 洪先龙

Chin. J. Semicond. 1987, 8(6): 604-613

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1987, 8(6): 604.

于泓涛, 洪先龙. 用于宏单元阵列的自动布局算法[J]. Chin. J. Semicond., 1987, 8(6): 604..Export: BibTex EndNote

于泓涛, 洪先龙. 用于宏单元阵列的自动布局算法[J]. Chin. J. Semicond., 1987, 8(6): 604...

双极晶体管表面1/f噪声的研究

庄奕琪, 孙青

Chin. J. Semicond. 1987, 8(6): 614-624

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1987, 8(6): 614.

庄奕琪, 孙青. 双极晶体管表面1/f噪声的研究[J]. Chin. J. Semicond., 1987, 8(6): 614..Export: BibTex EndNote

庄奕琪, 孙青. 双极晶体管表面1/f噪声的研究[J]. Chin. J. Semicond., 1987, 8(6): 614...

Al-Mo-Ti-PtSi-Si金属化系统特性研究

陈正明, 徐建良, 罗晋生, 沈文正

Chin. J. Semicond. 1987, 8(6): 625-630

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1987, 8(6): 625.

陈正明, 徐建良, 罗晋生, 沈文正. Al-Mo-Ti-PtSi-Si金属化系统特性研究[J]. Chin. J. Semicond., 1987, 8(6): 625..Export: BibTex EndNote

陈正明, 徐建良, 罗晋生, 沈文正. Al-Mo-Ti-PtSi-Si金属化系统特性研究[J]. Chin. J. Semicond., 1987, 8(6): 625...

As~+注入SOI的快速热退火研究

林成鲁, 邹世昌

Chin. J. Semicond. 1987, 8(6): 631-636

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1987, 8(6): 631.

林成鲁, 邹世昌. As~+注入SOI的快速热退火研究[J]. Chin. J. Semicond., 1987, 8(6): 631..Export: BibTex EndNote

林成鲁, 邹世昌. As~+注入SOI的快速热退火研究[J]. Chin. J. Semicond., 1987, 8(6): 631...

利用有色散双晶衍射测量完整或近完整晶体的单晶反射系数

陈京一, 李润身, 许顺生

Chin. J. Semicond. 1987, 8(6): 637-642

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1987, 8(6): 637.

陈京一, 李润身, 许顺生. 利用有色散双晶衍射测量完整或近完整晶体的单晶反射系数[J]. Chin. J. Semicond., 1987, 8(6): 637..Export: BibTex EndNote

陈京一, 李润身, 许顺生. 利用有色散双晶衍射测量完整或近完整晶体的单晶反射系数[J]. Chin. J. Semicond., 1987, 8(6): 637...

GaAs(100)表面成分的变化引起费米能级钉扎位置变动的一种新解释

张翔九

Chin. J. Semicond. 1987, 8(6): 643-649

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1987, 8(6): 643.

张翔九. GaAs(100)表面成分的变化引起费米能级钉扎位置变动的一种新解释[J]. Chin. J. Semicond., 1987, 8(6): 643..Export: BibTex EndNote

张翔九. GaAs(100)表面成分的变化引起费米能级钉扎位置变动的一种新解释[J]. Chin. J. Semicond., 1987, 8(6): 643...

半导体激光器的高频调制光相位不均匀效应

郭长志, 赵一广

Chin. J. Semicond. 1987, 8(6): 650-656

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1987, 8(6): 650.

郭长志, 赵一广. 半导体激光器的高频调制光相位不均匀效应[J]. Chin. J. Semicond., 1987, 8(6): 650..Export: BibTex EndNote

郭长志, 赵一广. 半导体激光器的高频调制光相位不均匀效应[J]. Chin. J. Semicond., 1987, 8(6): 650...

MeV He~+微束用于半导体集成电路的微区分析

朱沛然, 刘家瑞, 张敬平, 殷士端

Chin. J. Semicond. 1987, 8(6): 657-659

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1987, 8(6): 657.

朱沛然, 刘家瑞, 张敬平, 殷士端. MeV He~+微束用于半导体集成电路的微区分析[J]. Chin. J. Semicond., 1987, 8(6): 657..Export: BibTex EndNote

朱沛然, 刘家瑞, 张敬平, 殷士端. MeV He~+微束用于半导体集成电路的微区分析[J]. Chin. J. Semicond., 1987, 8(6): 657...

n-InP中深能级的研究

胡冰华, 周炳林

Chin. J. Semicond. 1987, 8(6): 660-664

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1987, 8(6): 660.

胡冰华, 周炳林. n-InP中深能级的研究[J]. Chin. J. Semicond., 1987, 8(6): 660..Export: BibTex EndNote

胡冰华, 周炳林. n-InP中深能级的研究[J]. Chin. J. Semicond., 1987, 8(6): 660...

硅中注铅的连续CO_2激光退火行为

殷士端, 张敬平, 顾诠, 陆珉华

Chin. J. Semicond. 1987, 8(6): 665-669

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1987, 8(6): 665.

殷士端, 张敬平, 顾诠, 陆珉华. 硅中注铅的连续CO_2激光退火行为[J]. Chin. J. Semicond., 1987, 8(6): 665..Export: BibTex EndNote

殷士端, 张敬平, 顾诠, 陆珉华. 硅中注铅的连续CO_2激光退火行为[J]. Chin. J. Semicond., 1987, 8(6): 665...

As-Se非晶态半导体的结构弛豫对光电导光强关系及瞬态过程的影响

陈玲荣, 闵嗣桂

Chin. J. Semicond. 1987, 8(6): 670-674

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1987, 8(6): 670.

陈玲荣, 闵嗣桂. As-Se非晶态半导体的结构弛豫对光电导光强关系及瞬态过程的影响[J]. Chin. J. Semicond., 1987, 8(6): 670..Export: BibTex EndNote

陈玲荣, 闵嗣桂. As-Se非晶态半导体的结构弛豫对光电导光强关系及瞬态过程的影响[J]. Chin. J. Semicond., 1987, 8(6): 670...

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