Journal of Semiconductors

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Volume 17, Issue 7, Jul 1996

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CONTENTS

半导体中轻杂质局域振动模的局域性效应

陆卫，徐文兰，沈学础

Chin. J. Semicond. 1996, 17(7): 481-484

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1996, 17(7): 481.

陆卫，徐文兰，沈学础. 半导体中轻杂质局域振动模的局域性效应[J]. Chin. J. Semicond., 1996, 17(7): 481..Export: BibTex EndNote

陆卫，徐文兰，沈学础. 半导体中轻杂质局域振动模的局域性效应[J]. Chin. J. Semicond., 1996, 17(7): 481...

在磁场中的Bridgman－Hg_（1－x）Cd_xTe晶体生长数值模拟研究

王培林，张国艳，周士仁

Chin. J. Semicond. 1996, 17(7): 485-492

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1996, 17(7): 485.

王培林，张国艳，周士仁. 在磁场中的Bridgman－Hg_（1－x）Cd_xTe晶体生长数值模拟研究[J]. Chin. J. Semicond., 1996, 17(7): 485..Export: BibTex EndNote

王培林，张国艳，周士仁. 在磁场中的Bridgman－Hg_（1－x）Cd_xTe晶体生长数值模拟研究[J]. Chin. J. Semicond., 1996, 17(7): 485...

InGaAs／GaAs应变层量子阱激光器深中心行为

卢励吾，封松林，周洁，杨国文，徐俊英，郭春伟

Chin. J. Semicond. 1996, 17(7): 493-499

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1996, 17(7): 493.

卢励吾，封松林，周洁，杨国文，徐俊英，郭春伟. InGaAs／GaAs应变层量子阱激光器深中心行为[J]. Chin. J. Semicond., 1996, 17(7): 493..Export: BibTex EndNote

卢励吾，封松林，周洁，杨国文，徐俊英，郭春伟. InGaAs／GaAs应变层量子阱激光器深中心行为[J]. Chin. J. Semicond., 1996, 17(7): 493...

窄发散角量子阱激光器的结构设计与分析

杨国文，徐俊英，张敬明，徐遵图，陈良惠，王启明

Chin. J. Semicond. 1996, 17(7): 500-505

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1996, 17(7): 500.

杨国文，徐俊英，张敬明，徐遵图，陈良惠，王启明. 窄发散角量子阱激光器的结构设计与分析[J]. Chin. J. Semicond., 1996, 17(7): 500..Export: BibTex EndNote

杨国文，徐俊英，张敬明，徐遵图，陈良惠，王启明. 窄发散角量子阱激光器的结构设计与分析[J]. Chin. J. Semicond., 1996, 17(7): 500...

微氮硅单晶中新施主的形成特性

杨德仁，樊瑞新，李立本，阙端麟

Chin. J. Semicond. 1996, 17(7): 506-512

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1996, 17(7): 506.

杨德仁，樊瑞新，李立本，阙端麟. 微氮硅单晶中新施主的形成特性[J]. Chin. J. Semicond., 1996, 17(7): 506..Export: BibTex EndNote

杨德仁，樊瑞新，李立本，阙端麟. 微氮硅单晶中新施主的形成特性[J]. Chin. J. Semicond., 1996, 17(7): 506...

扫描隧道显微镜重掺硅（111）表面微缺陷研究

刘鸿飞，秦福，朱悟新，尤重远，陈开茅

Chin. J. Semicond. 1996, 17(7): 513-517

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1996, 17(7): 513.

刘鸿飞，秦福，朱悟新，尤重远，陈开茅. 扫描隧道显微镜重掺硅（111）表面微缺陷研究[J]. Chin. J. Semicond., 1996, 17(7): 513..Export: BibTex EndNote

刘鸿飞，秦福，朱悟新，尤重远，陈开茅. 扫描隧道显微镜重掺硅（111）表面微缺陷研究[J]. Chin. J. Semicond., 1996, 17(7): 513...

电子束辐照对InP（100）表面硫钝化的增强作用

陈维德，李秀琼，段俐宏，谢小龙

Chin. J. Semicond. 1996, 17(7): 518-521

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1996, 17(7): 518.

陈维德，李秀琼，段俐宏，谢小龙. 电子束辐照对InP（100）表面硫钝化的增强作用[J]. Chin. J. Semicond., 1996, 17(7): 518..Export: BibTex EndNote

陈维德，李秀琼，段俐宏，谢小龙. 电子束辐照对InP（100）表面硫钝化的增强作用[J]. Chin. J. Semicond., 1996, 17(7): 518...

Si_3N_4绝缘栅中两种表面基对pH－ISFET器件敏感特性的影响

牛蒙年，丁辛芳，童勤义

Chin. J. Semicond. 1996, 17(7): 522-528

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1996, 17(7): 522.

牛蒙年，丁辛芳，童勤义. Si_3N_4绝缘栅中两种表面基对pH－ISFET器件敏感特性的影响[J]. Chin. J. Semicond., 1996, 17(7): 522..Export: BibTex EndNote

牛蒙年，丁辛芳，童勤义. Si_3N_4绝缘栅中两种表面基对pH－ISFET器件敏感特性的影响[J]. Chin. J. Semicond., 1996, 17(7): 522...

Pt／InP肖特基二极管气敏特性的研究

田敬民

Chin. J. Semicond. 1996, 17(7): 529-532

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1996, 17(7): 529.

田敬民. Pt／InP肖特基二极管气敏特性的研究[J]. Chin. J. Semicond., 1996, 17(7): 529..Export: BibTex EndNote

田敬民. Pt／InP肖特基二极管气敏特性的研究[J]. Chin. J. Semicond., 1996, 17(7): 529...

VLSI和PCB双层布线中的通孔最少化算法

洪先龙，潘立，王尔乾

Chin. J. Semicond. 1996, 17(7): 533-539

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1996, 17(7): 533.

洪先龙，潘立，王尔乾. VLSI和PCB双层布线中的通孔最少化算法[J]. Chin. J. Semicond., 1996, 17(7): 533..Export: BibTex EndNote

洪先龙，潘立，王尔乾. VLSI和PCB双层布线中的通孔最少化算法[J]. Chin. J. Semicond., 1996, 17(7): 533...

可调节势垒高度的Al／Si_（1—x）Gex肖特基接触

江若琏，李健，周晓春，刘建林，郑有

Chin. J. Semicond. 1996, 17(7): 540-544

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1996, 17(7): 540.

江若琏，李健，周晓春，刘建林，郑有. 可调节势垒高度的Al／Si_（1—x）Gex肖特基接触[J]. Chin. J. Semicond., 1996, 17(7): 540..Export: BibTex EndNote

江若琏，李健，周晓春，刘建林，郑有. 可调节势垒高度的Al／Si_（1—x）Gex肖特基接触[J]. Chin. J. Semicond., 1996, 17(7): 540...

GaAs（100）表面钝化和Mg／S／GaAs界面的SRPES研究

陆尔东，徐彭寿，徐世红，余小江，潘海斌，张新夷，赵天鹏，赵特秀

Chin. J. Semicond. 1996, 17(7): 545-551

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1996, 17(7): 545.

陆尔东，徐彭寿，徐世红，余小江，潘海斌，张新夷，赵天鹏，赵特秀. GaAs（100）表面钝化和Mg／S／GaAs界面的SRPES研究[J]. Chin. J. Semicond., 1996, 17(7): 545..Export: BibTex EndNote

陆尔东，徐彭寿，徐世红，余小江，潘海斌，张新夷，赵天鹏，赵特秀. GaAs（100）表面钝化和Mg／S／GaAs界面的SRPES研究[J]. Chin. J. Semicond., 1996, 17(7): 545...

Si_（1—x）Gex／Si应变层超晶格的结构稳定性研究

刘晓晗，黄大鸣，王东红，蒋最敏，张翔九，王迅

Chin. J. Semicond. 1996, 17(7): 552-556

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1996, 17(7): 552.

刘晓晗，黄大鸣，王东红，蒋最敏，张翔九，王迅. Si_（1—x）Gex／Si应变层超晶格的结构稳定性研究[J]. Chin. J. Semicond., 1996, 17(7): 552..Export: BibTex EndNote

刘晓晗，黄大鸣，王东红，蒋最敏，张翔九，王迅. Si_（1—x）Gex／Si应变层超晶格的结构稳定性研究[J]. Chin. J. Semicond., 1996, 17(7): 552...

3～5微米双势垒量子阱红外探测器结构在不同偏压下的光伏响应

崔丽秋，江德生，张耀辉，刘伟，吴文刚，王若帧

Chin. J. Semicond. 1996, 17(7): 557-560

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1996, 17(7): 557.

崔丽秋，江德生，张耀辉，刘伟，吴文刚，王若帧. 3～5微米双势垒量子阱红外探测器结构在不同偏压下的光伏响应[J]. Chin. J. Semicond., 1996, 17(7): 557..Export: BibTex EndNote

崔丽秋，江德生，张耀辉，刘伟，吴文刚，王若帧. 3～5微米双势垒量子阱红外探测器结构在不同偏压下的光伏响应[J]. Chin. J. Semicond., 1996, 17(7): 557...

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