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Volume 21, Issue 11, Nov 2000
CONTENTS
Research and Development of Electronic and Optoelectronic Materials in China
Wang, Zhanguo
Chin. J. Semicond.  2000, 21(11): 1041-1049
Abstract PDF

A review on the research and development of electronic and optoelectronic materials in China, including the main scientific activities in this field, is presented. The state\|of\|the\|arts and prospects of the electronic and optoelectronic materials in China are briefly introduced, such as those of silicon crystals, compound semiconductors, synthetic crystals,especially nonlinear optical crystals and rare\|earth permanent magnets materials, etc., with a greater emphasis on Chinese scientist's contributions...

A review on the research and development of electronic and optoelectronic materials in China, including the main scientific activities in this field, is presented. The state\|of\|the\|arts and prospects of the electronic and optoelectronic materials in China are briefly introduced, such as those of silicon crystals, compound semiconductors, synthetic crystals,especially nonlinear optical crystals and rare\|earth permanent magnets materials, etc., with a greater emphasis on Chinese scientist's contributions...
Carrier Depth Profile of Si/SiGe/Si n-p-n HBT Structural Materials Characterized by Electrochemical Capacitance- Voltage Method
林燕霞, 黄大定, 张秀兰, 刘金平, 李建平, 高飞, 孙殿照, 曾一平, 孔梅影
Chin. J. Semicond.  2000, 21(11): 1050-1054
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SOI- Based 3dB MMI Splitter
魏红振, 余金中, 刘忠立, 张晓峰, 史伟, 房昌水
Chin. J. Semicond.  2000, 21(11): 1055-1059
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New Method for Determining Characteristic Parameters of Normal Distribution
穆甫臣, 谭长华, 许铭真
Chin. J. Semicond.  2000, 21(11): 1060-1063
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Low Power Design of High Speed CMOS Pulse Stream Neuron Circuit
陈继伟, 石秉学
Chin. J. Semicond.  2000, 21(11): 1064-1068
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Numerical Simulation of BJMOSFET on Current- Voltage Characteristics
曾云, 金湘亮, 颜永红, 刘久玲, 成世明
Chin. J. Semicond.  2000, 21(11): 1069-1074
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A Novel Memory Compress Algorithm for Arbitrary Waveform Generator
吕铁良, 仇玉林
Chin. J. Semicond.  2000, 21(11): 1075-1079
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β-GaS钝化的GaAs表面的光电子能谱
董阳, 王康林, 丁训民, 来冰, 曹先安, 侯晓远
Chin. J. Semicond.  2000, 21(11): 1080-1085
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C~+注入Si形成SiC/Si异质结构的椭偏光谱
阳生红, 李辉遒, 莫党, 陈第虎, 黄世平
Chin. J. Semicond.  2000, 21(11): 1086-1091
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不同尺寸分布的自组织In_(0.55)Al_(0.45)As/Al_(0.5)Ga_(0.5)As量子点的静压光谱
陈晔, 张旺, 李国华, 韩和相, 汪兆平, 周伟, 王占国
Chin. J. Semicond.  2000, 21(11): 1092-1098
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GaAs/AlGaAs多量子阱材料差分反射光谱
代作晓, 陆书龙, 赵明山, 李国华
Chin. J. Semicond.  2000, 21(11): 1099-1102
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α-SiO_xN_y薄膜中分立能级的光发射
石旺舟, 梁厚蕴
Chin. J. Semicond.  2000, 21(11): 1103-1106
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SiO_2膜增强InGaAsP超晶格外延片的量子阱混合
黄晓东, 黄德修, 刘雪峰
Chin. J. Semicond.  2000, 21(11): 1107-1110
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组份线性渐变SiGe缓冲层的生长及其表征
李代宗, 成步文, 黄昌俊, 王红杰, 于卓, 张春晖, 余金中, 王启明
Chin. J. Semicond.  2000, 21(11): 1111-1115
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Simulation of Nano Si and Al Wires Growth on Si(100) Surface
吴锋民, 黄辉, 吴自勤
Chin. J. Semicond.  2000, 21(11): 1116-1121
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梯度Si_(1-c)Ge_c混晶太阳电池长波光谱响应及其短路电流的理论计算与分析
李成虎, 赵玉文, 黎雪梅, 王福永, 王玉亭, 阎晓彬, 陆炜
Chin. J. Semicond.  2000, 21(11): 1122-1128
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A New Timing- Driven Placement Algorithm Based on Table- Lookup Delay Model
于泓, 洪先龙, 姚波, 蔡懿慈
Chin. J. Semicond.  2000, 21(11): 1129-1138
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发射极电流集边效应理论的SPICE模拟验证
石林初, 杜行尧, 吕文生, 吴毅, 吴敏
Chin. J. Semicond.  2000, 21(11): 1139-1144
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