J. Semicond. > Volume 31 > Issue 9 > Article Number: 094009

Luminescence distribution and hole transport in asymmetric InGaN multiple-quantum well light-emitting diodes

Ji Xiaoli , Yang Fuhua , Wang Junxi , Duan Ruifei , Ding Kai , Zeng Yiping , Wang Guohong and Li Jinmin

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Abstract: Asymmetric InGaN/GaN multiple-quantum well (MQW) light-emitting diodes were fabricated to expose the luminescence distribution and explore the hole transport. Under electrical injection, the sample with a wNQW active region in which the first QW nearest the p-side (QW1) is wider than the subsequent QWs shows a single long-wavelength light-emission peak arising from QW1. The inverse nWQW sample with a narrow QW1 shows one short-wavelength peak and one long-wavelength peak emitted separately from QW1 and the subsequent QWs. Increasing the barrier thickness between QW1 and the second QW (QWB1) in the nWQW structure, the long-wavelength peak is suppressed and the total light-emission intensity decreases. It was concluded that the nWQW and thin-QWB1 structure can improve the hole transport, and hence enhance the light-emission from the subsequent QWs and increase the internal quantum efficiency.

Key words: InGaN

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Ji X L, Yang F H, Wang J X, Duan R F, Ding K, Zeng Y P, Wang G H, Li J M. Luminescence distribution and hole transport in asymmetric InGaN multiple-quantum well light-emitting diodes[J]. J. Semicond., 2010, 31(9): 094009. doi: 10.1088/1674-4926/31/9/094009.

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History

Manuscript received: 18 August 2015 Manuscript revised: Online: Published: 01 September 2010

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