J. Semicond. > Volume 32 > Issue 4 > Article Number: 043006

X-ray reflectivity and atomic force microscopy studies of MOCVD grown AlxGa1-xN/GaN superlattice structures

Wang Yuanzhang , Li Jinchai , Li Shuping , Chen Hangyang , Liu Dayi and Kang Junyong

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Abstract: The grazing incidence X-ray reflectivity (GIXR) technique and atomic force microscopy (AFM) were exploited to obtain an accurate evaluation of the surfaces and interfaces for metalorganic chemical vapor deposition grown AlxGa1-xN/GaN superlattice structures. The X-ray diffraction results have been combined with reflectivity data to evaluate the layer thickness and Al mole fraction in the AlGaN layer. The presence of a smooth interface is responsible for the observation of intensity oscillation in GIXR, which is well correlated to step flow observation in AFM images of the surface. The structure with a low Al mole fraction (x=0.25) and thin well width has a rather smooth surface for the Rrms of AFM data value is 0.45 nm.

Key words: metalorganic chemical vapor depositioninterfacessurfacesnitridessuperlatticeshigh resolution X-ray diffraction原子力显微镜

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Wang Y Z, Li J C, Li S P, Chen H Y, Liu D Y, Kang J Y. X-ray reflectivity and atomic force microscopy studies of MOCVD grown AlxGa1-xN/GaN superlattice structures[J]. J. Semicond., 2011, 32(4): 043006. doi: 10.1088/1674-4926/32/4/043006.

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Manuscript received: 18 August 2015 Manuscript revised: 18 November 2010 Online: Published: 01 April 2011

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