J. Semicond. > Volume 32 > Issue 8 > Article Number: 082002

Annealing effects on the formation of semiconducting Mg2Si film using magnetron sputtering deposition

Xiao Qingquan , Xie Quan , Chen Qian , Zhao Kejie , Yu Zhiqiang and Shen Xiangqian

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Abstract: Semiconducting Mg2Si films were synthesized on silicon (111) substrates by magnetron sputtering deposition and subsequent annealing in an annealing furnace filled with argon gas, and the effects of heat treatment on the formation and microstructure of Mg2Si films were investigated. The structural and morphological properties were investigated by X-ray diffraction (XRD) and scanning electron microscopy (SEM), respectively. The results show that the crystal quality of Mg2Si films depends strongly on the annealing temperature, the annealing time and the deposited magnesium film thickness. Annealing at 400 ℃ for 5 h is optimal for the preparation of Mg2Si film. XRD and SEM results show that magnesium silicide film with various orientations is formed on the silicon surface because of the interdiffusion and reaction of magnesium with substrate silicon atoms, and the evolution of surface features on growing films is very dependent on the annealing temperature and time.

Key words: thin filmmagnetron sputteringannealingX-ray diffractionscanning electron microscopy

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Xiao Q Q, Xie Q, Chen Q, Zhao K J, Yu Z Q, Shen X Q. Annealing effects on the formation of semiconducting Mg2Si film using magnetron sputtering deposition[J]. J. Semicond., 2011, 32(8): 082002. doi: 10.1088/1674-4926/32/8/082002.

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Manuscript received: 18 August 2015 Manuscript revised: 20 April 2011 Online: Published: 01 August 2011

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