J. Semicond. > Volume 34 > Issue 10 > Article Number: 103004

The effect of the multi-period on the properties of deep-ultraviolet transparent conductive Ga2O3/ITO alternating multilayer films

Chengyang Xu , Jinliang Yan , , Chao Li and Huihui Zhuang

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Abstract: Ga2O3/ITO alternating multilayer films were deposited on quartz glass substrates by magnetron sputtering. The effect of the multi-period on the structural, optical and electrical properties of Ga2O3/ITO alternating multilayer films was investigated by an X-ray diffractometer, a double beam spectrophotometer and the Hall system, respectively. A low sheet resistance of 225.5Ω/ꭐ and a high transmittance of more than 62.9% at a 300 nm wavelength were obtained for the two-period alternating multilayer film with a thickness of 72 nm.

Key words: transparent conductive filmalternating multilayer filmdeep ultravioletmulti-periodgallium oxideindium tin oxide

Abstract: Ga2O3/ITO alternating multilayer films were deposited on quartz glass substrates by magnetron sputtering. The effect of the multi-period on the structural, optical and electrical properties of Ga2O3/ITO alternating multilayer films was investigated by an X-ray diffractometer, a double beam spectrophotometer and the Hall system, respectively. A low sheet resistance of 225.5Ω/ꭐ and a high transmittance of more than 62.9% at a 300 nm wavelength were obtained for the two-period alternating multilayer film with a thickness of 72 nm.

Key words: transparent conductive filmalternating multilayer filmdeep ultravioletmulti-periodgallium oxideindium tin oxide



References:

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Benramache S, Chabane F, Benhaoua B. Influence of growth time on crystalline structure, conductivity and optical properties of ZnO thin films[J]. Journal of Semiconductors, 2013, 34(2): 023001. doi: 10.1088/1674-4926/34/2/023001

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Yang F, Ma J, Luan C. Structural and optical properties of Ga2(1-x)In2xO3 films prepared on α -Al2O3 (0001) by MOCVD[J]. Appl Surf Sci, 2009, 255(8): 4401. doi: 10.1016/j.apsusc.2008.10.129

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Liu Jianjun, Yan Jinliang, Shi Liang. Electrical and optical properties of deep ultraviolet transparent conductive Ga2O3/ITO films by magnetron sputtering[J]. Journal of Semiconductors, 2010, 31(10): 103001. doi: 10.1088/1674-4926/31/10/103001

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Li Ting, Yan Jinliang, Ding Xingwei. Effect of substrate temperature on the properties of deep ultraviolet transparent conductive ITO/Ga2O3 films[J]. Journal of Semiconductors, 2012, 33(1): 013002. doi: 10.1088/1674-4926/33/1/013002

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Hao L, Diao X, Xu H. Thickness dependence of structural, electrical and optical properties of indium tin oxide (ITO) films deposited on PET substrates[J]. Appl Surf Sci, 2008, 254(11): 3504. doi: 10.1016/j.apsusc.2007.11.063

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Guillen C, Herrero J. Polycrystalline growth and recrystallization processes in sputtered ITO thin films[J]. Thin Solid Films, 2006, 510(1/2): 260.

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Higuchi M, Uekusa S, Nakano R. Postdeposition annealing influence on sputtered indium tin oxide film characteristics[J]. Jpn J Appl Phys, 1994, 33: 302. doi: 10.1143/JJAP.33.302

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Seto J Y W. The electrical properties of polycrystalline silicon films[J]. J Appl Phys, 1975, 46(12): 5247. doi: 10.1063/1.321593

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Kulkarni A K, Schulz K H, Lim T S. Dependence of the sheet resistance of indium-tin-oxide thin films on grain size and grain orientation determined from X-ray diffraction techniques[J]. Thin Solid Films, 1999, 345(2): 273. doi: 10.1016/S0040-6090(98)01430-8

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Zhang Qun, Li Xifeng, Li Guifeng. Dependence of electrical and optical properties on thickness of tungsten-doped indium oxidethin films[J]. Thin Solid Films, 2008, 517(2): 613. doi: 10.1016/j.tsf.2008.07.023

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Kim H, Horwitz J S, Kushto G. Effect of film thickness on the properties of indium tin oxide thin films[J]. J Appl Phys, 2000, 88(10): 6021. doi: 10.1063/1.1318368

[25]

Gao Meizhen, Job R, Xue Desheng. Thickness dependence of resistivity and optical reflectance of ITO films[J]. Chin Phys Lett, 2008, 25(4): 1380. doi: 10.1088/0256-307X/25/4/059

[26]

Haacke G. New figure of merit for transparent conductors[J]. J Appl Phys, 1976, 47(9): 4086. doi: 10.1063/1.323240

[27]

Kim D. Influence of the Cs partial pressure on the optical and electrical properties of ITO films prepared by dc sputter type negative metal ion beam deposition[J]. Opt Mater, 2003, 24(3): 471. doi: 10.1016/S0925-3467(03)00030-2

[1]

Binet L, Gourier D. Origin of the blue luminescence of β -Ga2O3[J]. J Phys Chem Solids, 1998, 59(8): 1241. doi: 10.1016/S0022-3697(98)00047-X

[2]

Orita M, Hiramatsu H, Ohta H. Preparation of highly conductive, deep ultraviolet transparent β -Ga2O3 thin film at low deposition temperatures[J]. Thin Solid Films, 2002, 411(1): 134. doi: 10.1016/S0040-6090(02)00202-X

[3]

Orita M, Ohta H, Hirano M. Deep-ultraviolet transparent conductive β -Ga2O3 thin films[J]. Appl Phys Lett, 2000, 77(25): 4166. doi: 10.1063/1.1330559

[4]

Ueda N, Hosono H, Waseda R. Synthesis and control of conductivity of ultraviolet transmitting β -Ga2O3 single crystals[J]. Appl Phys Lett, 1997, 70(26): 3561. doi: 10.1063/1.119233

[5]

Ogita M, Higo K, Nakanishi Y. Ga2O3 thin film for oxygen sensor at high temperature[J]. Appl Phys Lett, 2001, 175/176(721).

[6]

Benramache S, Chabane F, Benhaoua B. Influence of growth time on crystalline structure, conductivity and optical properties of ZnO thin films[J]. Journal of Semiconductors, 2013, 34(2): 023001. doi: 10.1088/1674-4926/34/2/023001

[7]

Coutts T J, Young D L, Li Xiaonan. Characterization of transparent conducting oxide[J]. MRS Bulletin, 2000, 25(8): 58. doi: 10.1557/mrs2000.152

[8]

Yue Wei, Yan Jinliang, Wu Jiangyan. Structural and optical properties of Zn-doped β -Ga2O3 films[J]. Journal of Semiconductors, 2012, 33(7): 073003. doi: 10.1088/1674-4926/33/7/073003

[9]

Minami T. New n-type transparent conducting oxides[J]. MRS Bulletin, 2000, 25(8): 38. doi: 10.1557/mrs2000.149

[10]

Yang F, Ma J, Luan C. Structural and optical properties of Ga2(1-x)In2xO3 films prepared on α -Al2O3 (0001) by MOCVD[J]. Appl Surf Sci, 2009, 255(8): 4401. doi: 10.1016/j.apsusc.2008.10.129

[11]

Liu Jianjun, Yan Jinliang, Shi Liang. Electrical and optical properties of deep ultraviolet transparent conductive Ga2O3/ITO films by magnetron sputtering[J]. Journal of Semiconductors, 2010, 31(10): 103001. doi: 10.1088/1674-4926/31/10/103001

[12]

Li Ting, Yan Jinliang, Ding Xingwei. Effect of substrate temperature on the properties of deep ultraviolet transparent conductive ITO/Ga2O3 films[J]. Journal of Semiconductors, 2012, 33(1): 013002. doi: 10.1088/1674-4926/33/1/013002

[13]

Hao L, Diao X, Xu H. Thickness dependence of structural, electrical and optical properties of indium tin oxide (ITO) films deposited on PET substrates[J]. Appl Surf Sci, 2008, 254(11): 3504. doi: 10.1016/j.apsusc.2007.11.063

[14]

Cullity B D, Stock S R. Elements of X-ray diffraction. 3rd ed. New Jersey: Prentice Hall, 2001

[15]

Guillen C, Herrero J. Polycrystalline growth and recrystallization processes in sputtered ITO thin films[J]. Thin Solid Films, 2006, 510(1/2): 260.

[16]

Szczyrbowski J, Hartig K, Roegels S, et al. Coating, composed of an optically effective layer system, for substrates, whereby the layer system has a high anti-reflective effect, and method for the manufacturing of the coating. US Patent, No. 5216542, 1993

[17]

Ray S, Banerjee R, Basu N. Properties of tin doped indium oxide thin films prepared by magnetron sputtering[J]. J Appl Phys, 1983, 54(6): 3497. doi: 10.1063/1.332415

[18]

Tauc J. Amorphous and liquid semiconductors. London:Plenum Press, 1974

[19]

Curie D, Bartolo B D. Luminescence of inorganic solids. New York:Plenum Press, 1978

[20]

Higuchi M, Uekusa S, Nakano R. Postdeposition annealing influence on sputtered indium tin oxide film characteristics[J]. Jpn J Appl Phys, 1994, 33: 302. doi: 10.1143/JJAP.33.302

[21]

Seto J Y W. The electrical properties of polycrystalline silicon films[J]. J Appl Phys, 1975, 46(12): 5247. doi: 10.1063/1.321593

[22]

Kulkarni A K, Schulz K H, Lim T S. Dependence of the sheet resistance of indium-tin-oxide thin films on grain size and grain orientation determined from X-ray diffraction techniques[J]. Thin Solid Films, 1999, 345(2): 273. doi: 10.1016/S0040-6090(98)01430-8

[23]

Zhang Qun, Li Xifeng, Li Guifeng. Dependence of electrical and optical properties on thickness of tungsten-doped indium oxidethin films[J]. Thin Solid Films, 2008, 517(2): 613. doi: 10.1016/j.tsf.2008.07.023

[24]

Kim H, Horwitz J S, Kushto G. Effect of film thickness on the properties of indium tin oxide thin films[J]. J Appl Phys, 2000, 88(10): 6021. doi: 10.1063/1.1318368

[25]

Gao Meizhen, Job R, Xue Desheng. Thickness dependence of resistivity and optical reflectance of ITO films[J]. Chin Phys Lett, 2008, 25(4): 1380. doi: 10.1088/0256-307X/25/4/059

[26]

Haacke G. New figure of merit for transparent conductors[J]. J Appl Phys, 1976, 47(9): 4086. doi: 10.1063/1.323240

[27]

Kim D. Influence of the Cs partial pressure on the optical and electrical properties of ITO films prepared by dc sputter type negative metal ion beam deposition[J]. Opt Mater, 2003, 24(3): 471. doi: 10.1016/S0925-3467(03)00030-2

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C Y Xu, J L Yan, C Li, H H Zhuang. The effect of the multi-period on the properties of deep-ultraviolet transparent conductive Ga2O3/ITO alternating multilayer films[J]. J. Semicond., 2013, 34(10): 103004. doi: 10.1088/1674-4926/34/10/103004.

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Manuscript received: 18 March 2013 Manuscript revised: 16 April 2013 Online: Published: 01 October 2013

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