J. Semicond. > Volume 35 > Issue 12 > Article Number: 125004

A flat gain GaN MMIC power amplifier for X band application

Qin Ge 1, , , Xinyu Liu 2, , Yingkui Zheng 2, and Chuan Ye 1,

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Abstract: A flat gain two-stage MMIC power amplifier with a 2.8 GHz bandwidth is successfully developed for X band frequency application based on a fully integrated micro-strip AlGaN/GaN HEMT technology on a semi-insulating SiC substrate. Designed with a binary-cluster matching structure integrated with RC networks and LRC networks, the developed power MMIC gets a very flat small signal gain of 15 dB with a gain ripple of 0.35 dB over 9.1-11.9 GHz at the drain bias of 20 V. These RC networks are very easy to improve the stability of used GaN HEMTs with tolerance to the MMIC technology. Inside the frequency range of 9-11.2 GHz where the measurement system calibrated, the amplifier delivers a pulsed output power of 39 dBm and an associated power added efficiency of about 20% at 28 V without saturation, as the available RF power is limited.

Key words: AlGaN/GaN HEMTsflat gainMMICpower amplifierX-band

Abstract: A flat gain two-stage MMIC power amplifier with a 2.8 GHz bandwidth is successfully developed for X band frequency application based on a fully integrated micro-strip AlGaN/GaN HEMT technology on a semi-insulating SiC substrate. Designed with a binary-cluster matching structure integrated with RC networks and LRC networks, the developed power MMIC gets a very flat small signal gain of 15 dB with a gain ripple of 0.35 dB over 9.1-11.9 GHz at the drain bias of 20 V. These RC networks are very easy to improve the stability of used GaN HEMTs with tolerance to the MMIC technology. Inside the frequency range of 9-11.2 GHz where the measurement system calibrated, the amplifier delivers a pulsed output power of 39 dBm and an associated power added efficiency of about 20% at 28 V without saturation, as the available RF power is limited.

Key words: AlGaN/GaN HEMTsflat gainMMICpower amplifierX-band



References:

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Wang D F, Yuan T T, Wei K. Gate-structure optimization for high frequency power AlGaNGaN HEMTs[J]. Journal of Semiconductors, 2010, 3(5): 054003.

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Costrini C, Cetronio A, Romanini P. 50 W X-band GaN MMIC HPA:effective power capability and transient thermal analysis[J]. European Microwave Integrated Circuits Conference (EuMIC), 2010: 408.

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Imbornone J F, Murphy M T, Donahue R S. New insight into subharmonic oscillation mode of GaAs power amplifiers under severe output mismatch condition[J]. IEEE J Solid-State Circuits, 1997, 32(9): 1319. doi: 10.1109/4.628734

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Teeter D, Platzker A, Bourque R. A compact network for eliminating parametric oscillations in high power MMIC amplifiers[J]. IEEE MTT-S International Microwave Symposium Digest, 1999: 967.

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[1]

Parikh P, Wu Y F, Chavarkar P. AlGaN-GaN HEMTs:material, device, circuit technology and applications[J]. IEEE International Symposium on Compound Semiconductors:Post-Conference Proceedings, 2003: 164.

[2]

Boles T, Carlson D, Varmazis C. Cost effective, high performance GaN technology[J]. Asia-Pacific Microwave Conference Proceedings (APMC), 2010: 131.

[3]

Li X, Chen W H, Feng Z H. Design of dual-band tri-way GaN doherty power amplifier with frequency dependent power division[J]. Electron Lett, 2012, 48(13): 797. doi: 10.1049/el.2012.1203

[4]

Giofre R, Colantonio P, Giannini F. GaN broadband power amplifiers for terrestrial and space transmitters[J]. 19th International Conference on Microwave Radar and Wireless Communications (MIKON), 2012: 605.

[5]

Guljaev V I, Glazunov V V, Zykova G S. X-band amplifier on GaN qmic with output power of 20 W[J]. 21th International Crimean Conference on Microwave and Telecommunication Technology (CriMiCo), 2011: 127.

[6]

Piotrowicz S, Ouarch Z, Chartier E. 43 W, 52% PAE X-band AlGaN/GaN HEMTs MMIC amplifiers[J]. IEEE MTT-S International Microwave Symposium Digest, 2010: 505.

[7]

Ni F, Fang J, Feng H. Design of an X-band high power solid state power amplifier based on GaN HEMT[J]. International Conference on Microwave and Millimeter Wave Technology (ICMMT), 2010: 1916.

[8]

Palmour J W, Sheppard S T, Smith R P. Wide bandgap semiconductor devices and MMICs for RF power applications[J]. IEEE International Electron Devices Meeting Technical Digest, 2001: 17.

[9]

Suijker E M, Sudow M, Fagerlind M. GaN MMIC power amplifiers for S-band and X-band[J]. 38th European Microwave Conference, 2008: 297.

[10]

Jardel O, Mazeau J, Piotrowicz S. GaN power MMICs for X-band T/R modules[J]. European Microwave Integrated Circuits Conference (EuMIC), 2010: 17.

[11]

Krishnamurthy K, Wang D, Landberg B. RLC matched GaN HEMT power amplifier with 2 GHz bandwidth[J]. IEEE Compound Semiconductor Integrated Circuits Symposium, 2008: 1.

[12]

Schuh P, Leberer R, Sledzik H. 20 W GaN HPAs for next generation X-band T/R-modules[J]. IEEE MTT-S International Microwave Symposium Digest, 2006: 726.

[13]

Peng M Z, Zheng Y K, Wei K. X-band AlGaN/GaN HEMTs with high microwave power performance[J]. Science China-Physics Mechanics & Astronomy, 2011, 54(3): 442.

[14]

Wang D F, Yuan T T, Wei K. Gate-structure optimization for high frequency power AlGaNGaN HEMTs[J]. Journal of Semiconductors, 2010, 3(5): 054003.

[15]

Costrini C, Cetronio A, Romanini P. 50 W X-band GaN MMIC HPA:effective power capability and transient thermal analysis[J]. European Microwave Integrated Circuits Conference (EuMIC), 2010: 408.

[16]

Imbornone J F, Murphy M T, Donahue R S. New insight into subharmonic oscillation mode of GaAs power amplifiers under severe output mismatch condition[J]. IEEE J Solid-State Circuits, 1997, 32(9): 1319. doi: 10.1109/4.628734

[17]

Teeter D, Platzker A, Bourque R. A compact network for eliminating parametric oscillations in high power MMIC amplifiers[J]. IEEE MTT-S International Microwave Symposium Digest, 1999: 967.

[18]

Freitag R G, Lee S H, Krafcsik D M. Stability and improved circuit modeling considerations for high power MMIC amplifiers[J]. IEEE Microwave and Millimeter -Wave Monolithic Circuits Symposium Digest, 1988: 125.

[19]

Ohtomo M. Stability analysis and numerical simulation of multidevice amplifiers[J]. IEEE Trans Microw Theory Tech, 1993, 41(6): 983. doi: 10.1109/22.238513

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Q Ge, X Y Liu, Y K Zheng, C Ye. A flat gain GaN MMIC power amplifier for X band application[J]. J. Semicond., 2014, 35(12): 125004. doi: 10.1088/1674-4926/35/12/125004.

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Manuscript received: 04 May 2014 Manuscript revised: 29 July 2014 Online: Published: 01 December 2014

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