J. Semicond. > Volume 35 > Issue 4 > Article Number: 044002

DC and RF characteristics of enhancement-mode InAlN/GaN HEMT with fluorine treatment

Xubo Song , Guodong Gu , Shaobo Dun , Yuanjie Lü , Tingting Han , Yuangang Wang , Peng Xu and Zhihong Feng ,

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Abstract: We report an enhancement-mode InAlN/GaN HEMT using a fluorine plasma treatment. The threshold voltage was measured to be +0.86 V by linear extrapolation from the transfer characteristics. The transconductance is 0 mS/mm at VGS=0 V and VDS=5 V, which shows a truly normal-off state. The gate leakage current density of the enhancement-mode device shows two orders of magnitude lower than that of the depletion-mode device. The transfer characteristics of the E-mode InAlN/GaN HEMT at room temperature and high temperature are reported. The current gain cut-off frequency (fT) and the maximum oscillation frequency (fmax) of the enhancement-mode device with a gate length of 0.3 μm were 29.4 GHz and 37.6 GHz respectively, which is comparable with the depletion-mode device. A classical 16 elements small-signal model was deduced to describe the parasitic and the intrinsic parameters of the device.

Key words: enhancement-modeInAlN/GaN HEMTthreshold voltagefluorine treatmentsmall-signal model

Abstract: We report an enhancement-mode InAlN/GaN HEMT using a fluorine plasma treatment. The threshold voltage was measured to be +0.86 V by linear extrapolation from the transfer characteristics. The transconductance is 0 mS/mm at VGS=0 V and VDS=5 V, which shows a truly normal-off state. The gate leakage current density of the enhancement-mode device shows two orders of magnitude lower than that of the depletion-mode device. The transfer characteristics of the E-mode InAlN/GaN HEMT at room temperature and high temperature are reported. The current gain cut-off frequency (fT) and the maximum oscillation frequency (fmax) of the enhancement-mode device with a gate length of 0.3 μm were 29.4 GHz and 37.6 GHz respectively, which is comparable with the depletion-mode device. A classical 16 elements small-signal model was deduced to describe the parasitic and the intrinsic parameters of the device.

Key words: enhancement-modeInAlN/GaN HEMTthreshold voltagefluorine treatmentsmall-signal model



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[1]

Medjdoub F, Carlin J F, Gonschorek M. Can InAlN/GaN be an alternative to high power/high temperature AlGaN/GaN devices[J]. IEDM Tech Dig, 2006: 927.

[2]

Liu Bo, Feng Zhihong, Zhang Sen. A 4.69 W/mm output power density InAlN/GaN HEMT grown on sapphire[J]. Journal of Semiconductors, 2011, 32(12): 124003. doi: 10.1088/1674-4926/32/12/124003

[3]

Yue Y Z, Hu Z Y, Guo J. Ultrascaled InAlN/GaN HEMTs with fT of 400 GHz[J]. IWN Tech Dig, 2012: 558.

[4]

Schuette M L, Andrew K, Song B. Gate-recessed integrated E/D GaN HEMT technology with fT/fmax > 300 GHz[J]. IEEE Electron Device Lett, 2013, 34(6): 741. doi: 10.1109/LED.2013.2257657

[5]

Wang Chong, Zhang Jinfeng, Quan Si. An enhancement-mode AlGaN/GaN HEMT with recessed-gate[J]. Journal of Semiconductors, 2008, 29(9): 1682.

[6]

Medjdoub F, Alomari M, Carlin J F. Effect of fluoride plasma treatment on InAlN/GaN HEMTs[J]. Electron Lett, 2008, 44(11): 696. doi: 10.1049/el:20080864

[7]

Yasuhiro U, Tatsuo M, Ayanori I. GaN monolithic inverter IC using normally-off gate injection transistors with planar isolation on Si substrate[J]. IEDM Tech Dig, 2009: 165.

[8]

Gu Guodong, Cai Yong, Feng Zhihong. Enhancement-mode InAlN/GaN MISHEMT with low gate leakage current[J]. Journal of Semiconductors, 2012, 33(6): 064004. doi: 10.1088/1674-4926/33/6/064004

[9]

Cai Y, Zhou Y, Chen K J. High-performance enhancement-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment[J]. IEEE Electron Device Lett, 2005, 26(7): 435. doi: 10.1109/LED.2005.851122

[10]

Chen G, Kumar V, Schwindt R S. A low gate bias model extraction technique for AlGaN/GaN HEMTs[J]. IEEE Trans Micro Theory Tech, 2006, 54(7): 2949. doi: 10.1109/TMTT.2006.877047

[11]

Cai Y, Zhou Y G, Lau K M. Control of threshold voltage of AlGaN/GaN HEMTs by fluoride-based plasma treatment:from depletion mode to enhancement model[J]. IEEE Trans Electron Devices, 2006, 53(9): 2207. doi: 10.1109/TED.2006.881054

[12]

Tang W, Xu K W, Wang P. Abnormal increase of the resistivity of Au/NiCr/Ta multilayer after annealing[J]. Acta Metall Sin, 2003, 39: 172.

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X B Song, G D Gu, S B Dun, Y Lü, T T Han, Y G Wang, P Xu, Z H Feng. DC and RF characteristics of enhancement-mode InAlN/GaN HEMT with fluorine treatment[J]. J. Semicond., 2014, 35(4): 044002. doi: 10.1088/1674-4926/35/4/044002.

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Manuscript received: 30 July 2013 Manuscript revised: 10 October 2013 Online: Published: 01 April 2014

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