J. Semicond. > Volume 36 > Issue 3 > Article Number: 034009

Small signal modeling of AlGaN/GaN HEMTs with consideration of CPW capacitances

Jiangfeng Du 1, , , Peng Xu 2, , Kang Wang 1, , Chenggong Yin 1, , Yang Liu 1, , Zhihong Feng 2, , Shaobo Dun 2, and Qi Yu 1,

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Abstract: Given the coplanar waveguide (CPW) effect on AlGaN/GaN high electron mobility transistors at a high frequency, the traditional equivalent circuit model cannot accurately describe the electrical characteristics of the device. The admittance of CPW capacitances is large when the frequency is higher than 40 GHz; its impact on the device cannot be ignored. In this study, a small-signal equivalent circuit model considering CPW capacitance is provided. To verify the model, S-parameters are obtained from the modeling and measurements. A good agreement is observed between the simulation and measurement results, indicating the reliability of the model.

Key words: AlGaN/GaN HEMTcoplanar waveguide effectmodelingsmall signalS-parameters

Abstract: Given the coplanar waveguide (CPW) effect on AlGaN/GaN high electron mobility transistors at a high frequency, the traditional equivalent circuit model cannot accurately describe the electrical characteristics of the device. The admittance of CPW capacitances is large when the frequency is higher than 40 GHz; its impact on the device cannot be ignored. In this study, a small-signal equivalent circuit model considering CPW capacitance is provided. To verify the model, S-parameters are obtained from the modeling and measurements. A good agreement is observed between the simulation and measurement results, indicating the reliability of the model.

Key words: AlGaN/GaN HEMTcoplanar waveguide effectmodelingsmall signalS-parameters



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[1]

Shinohara K, Regan D C, Tang Y. Scaling of GaN HEMTs and Schottky diodes for submillimeter-wave MMIC applications[J]. IEEE Trans Electron Devices, 2013, 60(10): 2982.

[2]

Dumka D C, Chou T M, Faili F. AlGaN/GaN HEMTs on diamond substrate with over 7 W/mm output power density at 10 GHz[J]. Electron Lett, 2013, 49(20): 1298.

[3]

Dambrine G, Cappy A, Heliodore F. A new method for determining the FET small-signal equivalent circuit[J]. IEEE Trans Microw Theory Tech, 1988, 36(7): 1151.

[4]

Costa D, Liu W, Harris J S. Direct extraction of the AlGaAs/GaAs heterojunction bipolar transistor small-signal equivalent circuit[J]. IEEE Trans Electron Devices, 1991, 38(9): 2018.

[5]

Shealy J R, Wang J, Brown R. Methodology for small-signal model extraction of AlGaN HEMTs[J]. IEEE Trans Electron Devices, 2008, 55(7): 1603.

[6]

Chen G, Kumar V, Schwindt R S. A low gate bias model extraction technique for AlGaN/GaN HEMTs[J]. IEEE Trans Microw Theory Tech, 2006, 54(7): 2949.

[7]

Crupi G, Xiao D, Schreurs D M. Accurate multibias equivalent-circuit extraction for GaN HEMTs[J]. IEEE Trans Microw Theory Tech, 2006, 54(10): 3616.

[8]

Jarndal A, Kompa G. A new small-signal modeling approach applied to GaN devices[J]. IEEE Trans Microw Theory Tech, 2005, 53(11): 3440.

[9]

Jarndal A, Kompa G. An accurate small-signal model for AlGaNGaN HEMT suitable for scalable large-signal model construction[J]. IEEE Microw Wireless Compon Lett, 2006, 16(6): 333.

[10]

Landa A Z, Zuñiga J E, Reynoso-Hernández J A. A new and better method for extracting the parasitic elements of on-wafer GaN transistors[J]. IEEE MTTS-S Int Microwave Symp, 2007: 791.

[11]

Reynoso-Hernández J A, Zuñiga-Juárez J E, Landa A Z. A new method for determining the gate resistance and inductance of GaN HEMTs based on the extrema points of Z11 curves[J]. IEEE MTT-S, International Microwave Symp, 2008: 1409.

[12]

Alt A R, Marti D, Bolognesi C R. Transistor modeling: robust small-signal equivalent circuit extraction in various HEMT technologies[J]. IEEE Microw Mag, 2013, 14(4): 83.

[13]

Hanna V F, Thebault D. Theoretical and experimental investigation of asymmetric coplanar waveguides[J]. IEEE Trans Microw Theory Tech, 1984, 20(3): 469.

[14]

Jarndal A, Markos A Z, Kompa G. Improved parameter extraction method for GaN HEMT on Si substrate[J]. IEEE MTT-S Int Microw Symp Dig, 2010: 1668.

[15]

Brady R G, Oxley C H, Brazil T J. An improved small-signal parameter-extraction algorithm for GaN HEMT devices[J]. IEEE Trans Microw Theory Tech, 2008, 56(7): 1535.

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J F Du, P Xu, K Wang, C G Yin, Y Liu, Z H Feng, S B Dun, Q Yu. Small signal modeling of AlGaN/GaN HEMTs with consideration of CPW capacitances[J]. J. Semicond., 2015, 36(3): 034009. doi: 10.1088/1674-4926/36/3/034009.

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Manuscript received: 24 July 2014 Manuscript revised: Online: Published: 01 March 2015

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