J. Semicond. > Volume 37 > Issue 3 > Article Number: 034003

Small-signal model parameter extraction for AlGaN/GaN HEMT

Le Yu 1, 2, , , Yingkui Zheng 2, , Sheng Zhang 1, 2, , Lei Pang 2, , Ke Wei 2, and Xiaohua Ma 1,

+ Author Affilications + Find other works by these authors

PDF

Abstract: A new 22-element small signal equivalent circuit model for the AlGaN/GaN high electron mobility transistor(HEMT) is presented. Compared with the traditional equivalent circuit model, the gate forward and breakdown conductions(Ggsf and Ggdf) are introduced into the new model to characterize the gate leakage current. Additionally, for the new gate-connected field plate and the source-connected field plate of the device, an improved method for extracting the parasitic capacitances is proposed, which can be applied to the small-signal extraction for an asymmetric device. To verify the model, S-parameters are obtained from the modeling and measurements. The good agreement between the measured and the simulated results indicate that this model is accurate, stable and comparatively clear in physical significance.

Key words: AlGaN/GaN HEMTsmall-signalparameter extractionmodeling

Abstract: A new 22-element small signal equivalent circuit model for the AlGaN/GaN high electron mobility transistor(HEMT) is presented. Compared with the traditional equivalent circuit model, the gate forward and breakdown conductions(Ggsf and Ggdf) are introduced into the new model to characterize the gate leakage current. Additionally, for the new gate-connected field plate and the source-connected field plate of the device, an improved method for extracting the parasitic capacitances is proposed, which can be applied to the small-signal extraction for an asymmetric device. To verify the model, S-parameters are obtained from the modeling and measurements. The good agreement between the measured and the simulated results indicate that this model is accurate, stable and comparatively clear in physical significance.

Key words: AlGaN/GaN HEMTsmall-signalparameter extractionmodeling



References:

[1]

Mishra U K, Parikh P, Wu Y F. AlGaN/GaN HEMTs——an overview of device operation and applications[J]. Proc IEEE, 2002, 90(6): 1022.

[2]

Lee M S, Kim D, Seo K S. A compact 30-W AlGaN/GaN HEMTs on silicon substrate with output power density of 8.1 W/mm at 8 GHz[J]. IEEE Electron Device Lett, 2014, 35(10): 995.

[3]

Mahalakshmi B S, Manikantan S. Small signal modeling of GaN HEMT at 70 GHz[J]. IEEE International Conference on Signal Processing and Integrated Networks(SPIN), 2014: 740.

[4]

Du J f, Xu P, Wang K. Small signal modeling of AlGaN/GaN HEMTs with consideration of CPW capacitances[J]. Journal of Semiconductors, 2015, 36(3): 034009.

[5]

Landa A Z, Zuniga J E. A new and better method for extracting the parasitic elements of on-wafer GaN transistors[J]. IEEE MTTS-S Int Microwave Symp, 2007: 791.

[6]

Jarndal A. Parasitic elements extraction of AlGaN/GaN HEMTs on SiC substrate using only pinch-off S-parameter measurements[J]. 26th International Conference on Microelectronics(ICM), 2014: 13.

[7]

Jarndal A, Kompa G. A new small-signal modeling approach applied to GaN devices[J]. IEEE Trans Microw Theory Tech, 2005, 53(11): 3440.

[8]

Dambrine G, Cappy A, Heliodore F. A new method for determining the FET small-signal equivalent circuit[J]. IEEE Trans Microw Theory Tech, 1988, 36(7): 1156.

[9]

Brady R G, Oxley C H, Brazil T J. An improved small-signal parameter-extraction algorithm for GaN HEMT devices[J]. IEEE Trans Microw Theory Tech, 2008, 56(7): 1543.

[10]

Jarndal A. Measurements uncertainty and modeling reliability of GaN HEMTs[J]. Proceeding of IEEE International Conference on Modeling, 2013.

[11]

Fan Q, Leach J H, Morkoc H. Small signal equivalent circuit modeling for AlGaN/GaN HFET:hybrid extraction method for determining circuit elements of AlGaN/GaN HFET[J]. Proc IEEE, 2010, 98: 1140.

[1]

Mishra U K, Parikh P, Wu Y F. AlGaN/GaN HEMTs——an overview of device operation and applications[J]. Proc IEEE, 2002, 90(6): 1022.

[2]

Lee M S, Kim D, Seo K S. A compact 30-W AlGaN/GaN HEMTs on silicon substrate with output power density of 8.1 W/mm at 8 GHz[J]. IEEE Electron Device Lett, 2014, 35(10): 995.

[3]

Mahalakshmi B S, Manikantan S. Small signal modeling of GaN HEMT at 70 GHz[J]. IEEE International Conference on Signal Processing and Integrated Networks(SPIN), 2014: 740.

[4]

Du J f, Xu P, Wang K. Small signal modeling of AlGaN/GaN HEMTs with consideration of CPW capacitances[J]. Journal of Semiconductors, 2015, 36(3): 034009.

[5]

Landa A Z, Zuniga J E. A new and better method for extracting the parasitic elements of on-wafer GaN transistors[J]. IEEE MTTS-S Int Microwave Symp, 2007: 791.

[6]

Jarndal A. Parasitic elements extraction of AlGaN/GaN HEMTs on SiC substrate using only pinch-off S-parameter measurements[J]. 26th International Conference on Microelectronics(ICM), 2014: 13.

[7]

Jarndal A, Kompa G. A new small-signal modeling approach applied to GaN devices[J]. IEEE Trans Microw Theory Tech, 2005, 53(11): 3440.

[8]

Dambrine G, Cappy A, Heliodore F. A new method for determining the FET small-signal equivalent circuit[J]. IEEE Trans Microw Theory Tech, 1988, 36(7): 1156.

[9]

Brady R G, Oxley C H, Brazil T J. An improved small-signal parameter-extraction algorithm for GaN HEMT devices[J]. IEEE Trans Microw Theory Tech, 2008, 56(7): 1543.

[10]

Jarndal A. Measurements uncertainty and modeling reliability of GaN HEMTs[J]. Proceeding of IEEE International Conference on Modeling, 2013.

[11]

Fan Q, Leach J H, Morkoc H. Small signal equivalent circuit modeling for AlGaN/GaN HFET:hybrid extraction method for determining circuit elements of AlGaN/GaN HFET[J]. Proc IEEE, 2010, 98: 1140.

Lu Jing, Wang Yan, Ma Long, Yu Zhiping. A New Small-Signal Modeling and Extraction Method in AlGaN/GaN HEMTs. J. Semicond., 2007, 28(4): 567.

Liu Dan, Chen Xiaojuan, Liu Xinyu, Wu Dexin. A 22-Element Small-Signal Model of GaN HEMT Devices. J. Semicond., 2007, 28(9): 1438.

Pu Yan, Pang Lei, Wang Liang, Chen Xiaojuan, Li Chengzhan, Liu Xinyu. Improvements to the extraction of an AlGaN/GaN HEMT small-signal model. J. Semicond., 2009, 30(12): 124003. doi: 10.1088/1674-4926/30/12/124003

Jiangfeng Du, Peng Xu, Kang Wang, Chenggong Yin, Yang Liu, Zhihong Feng, Shaobo Dun, Qi Yu. Small signal modeling of AlGaN/GaN HEMTs with consideration of CPW capacitances. J. Semicond., 2015, 36(3): 034009. doi: 10.1088/1674-4926/36/3/034009

Xue Lijun, Xia Yang, Liu Ming, Wang Yan, Shao Xue, Lu Jing, Ma Jie, Xie Changqing, Yu Zhiping. Two-Dimensional Static Numerical Modeling and Simulation of AlGaN/GaN HEMT. J. Semicond., 2006, 27(2): 298.

Wang Xinhua, Zhao Miao, Liu Xinyu, Zheng Yingkui, Wei Ke. A revised approach to Schottky parameter extraction for GaN HEMT. J. Semicond., 2010, 31(7): 074005. doi: 10.1088/1674-4926/31/7/074005

Zhang Jinfeng, Hao Yue. Numerical Explanation of Slow Transients in an AlGaN/GaN HEMT. J. Semicond., 2006, 27(2): 276.

Liu Dan, Chen Xiaojuan, Liu Guoguo, He Zhijing, Liu Xinyu, Wu Dexin. A New AlGaN/GaN HEMT Semiempirical DC Model. J. Semicond., 2006, 27(11): 1984.

Pu Yan, Wang Liang, Yuan Tingting, Ouyang Sihua, Liu Guoguo, Luo Weijun, Liu Xinyu. Multi-bias capacitance voltage characteristic of AlGaN/GaN HEMT. J. Semicond., 2010, 31(10): 104002. doi: 10.1088/1674-4926/31/10/104002

Chen Huifang, Wang Xiantai, Chen Xiaojuan, Luo Weijun, Liu Xinyu. An 8 GHz high power AlGaN/GaN HEMT VCO. J. Semicond., 2010, 31(7): 074012. doi: 10.1088/1674-4926/31/7/074012

Feng Zhen, Zhang Zhiguo, Wang Yong, Mo Jianghui, Song Jianbo, Feng Zhihong, Cai Shujun, Yang Kewu. A Recessed AlGaN/GaN HEMT with High Output Power in the X Band. J. Semicond., 2007, 28(11): 1773.

Junwei Yang, Shiwei Feng, Dong Shi, Chunhui Yang. Thermal time-constant spectrum extraction method in AlGaN/GaN HEMTs. J. Semicond., 2015, 36(8): 084003. doi: 10.1088/1674-4926/36/8/084003

Wang Dongfang, Yuan Tingting, Wei Ke, Chen Xiaojuan, Liu Xinyu. Gate-structure optimization for high frequency power AlGaN/GaN HEMTs. J. Semicond., 2010, 31(5): 054003. doi: 10.1088/1674-4926/31/5/054003

Liu Jian, Li Chenzhan, Wei Ke, He Zhijing, Liu Guoguo, Zheng Yingkui, Liu Xinyu, Wu Dexin. Development of High Performance AlGaN/GaN HEMTswith Low Ohmic Contact. J. Semicond., 2006, 27(13): 262.

Pang Lei, Li Chengzhan, Wang Dongdong, Huang Jun, Zeng Xuan, Liu Xinyu, Liu Jian, Zheng Yingkui, He Zhijing. Carbon-Induced Deep Traps Responsible for Current Collapse in AlGaN/GaN HEMTs. J. Semicond., 2008, 29(6): 1066.

Wang Dongfang, Wei Ke, Yuan Tingting, Liu Xinyu. High performance AlGaN/GaN HEMTs with 2.4 μm source–drain spacing. J. Semicond., 2010, 31(3): 034001. doi: 10.1088/1674-4926/31/3/034001

Li Ruizhen, Li Duoli, Du Huan, Hai Chaohe, Han Zhengsheng. SOI MOSFET Model Parameter Extraction via a Compound Genetic Algorithm. J. Semicond., 2006, 27(5): 796.

Xu Jingbo, Yin Junjian, Zhang Haiying, Li Xiao, Liu Liang, Ye Tianchun. Abstraction of Small Signal Equivalent Circuit Parameters of Enhancement-Mode InGaP/AlGaAs/InGaAs PHEMT. J. Semicond., 2007, 28(3): 361.

Chi Yusong, Huang Fengyi, Wu Zhongjie, Zhang Shaoyong, Kong Xiaoming, Wang Zhigong. Characterization and Modeling for 0.13μm RF MOSFETs. J. Semicond., 2006, 27(2): 373.

Shangbin Ye, Jiajia Zhang, Yicheng Zhang, Yongtao Yao. Temperature-variable high-frequency dynamic modeling of PIN diode. J. Semicond., 2016, 37(4): 044010. doi: 10.1088/1674-4926/37/4/044010

Search

Advanced Search >>

GET CITATION

L Yu, Y K Zheng, S Zhang, L Pang, K Wei, X H Ma. Small-signal model parameter extraction for AlGaN/GaN HEMT[J]. J. Semicond., 2016, 37(3): 034003. doi: 10.1088/1674-4926/37/3/034003.

Export: BibTex EndNote

Article Metrics

Article views: 307 Times PDF downloads: 6 Times

History

Manuscript received: 02 July 2015 Manuscript revised: Online: Published: 01 March 2016

Email This Article

User name:
Email:*请输入正确邮箱
Code:*验证码错误