J. Semicond. > Volume 37 > Issue 8 > Article Number: 084001

Development of 17 kV 4H-SiC PiN diode

Runhua Huang , , Yonghong Tao , Ling Wang , Gang Chen , Song Bai , Rui Li and Zhifei Zhao

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Abstract: The design, fabrication, and electrical characteristics of a 4H-SiC PiN diode with breakdown voltage higher than 17 kV are presented. The three-zone JTE has been used in the fabrication. Numerical simulations have been performed to optimize the parameters of the edge termination technique. The epilayer properties of the N-type are 175μm with a doping of 2×1014cm-3. With the three-zone JTE, a typical breakdown voltage of 17 kV has been achieved.

Key words: 4H-SiCpower deviceterminationJTE

Abstract: The design, fabrication, and electrical characteristics of a 4H-SiC PiN diode with breakdown voltage higher than 17 kV are presented. The three-zone JTE has been used in the fabrication. Numerical simulations have been performed to optimize the parameters of the edge termination technique. The epilayer properties of the N-type are 175μm with a doping of 2×1014cm-3. With the three-zone JTE, a typical breakdown voltage of 17 kV has been achieved.

Key words: 4H-SiCpower deviceterminationJTE



References:

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[1]

Huang Runhua, Tao Yonghong, Cao Pengfei. Development of 10 kV 4H-SiC JBS diode with FGR termination[J]. Journal of Semiconductors, 2014, 35(7): 074005. doi: 10.1088/1674-4926/35/7/074005

[2]

Huang Runhua, Chen Gang, Bai Song. Fabrication and characterization of 4500 V 4H-SiC JBS diode[J]. Materials Science Forum, 2014, 778-780: 800. doi: 10.4028/www.scientific.net/MSF.778-780

[3]

Huang Runhua, Tao Yonghong, Chen Gang. Fabrication and characterization of 6500 V 4H-SiC JBS diode[J]. Advanced Materials Research, 2014, 846/847: 737.

[4]

Salemi A, Elahipanah H, Buono B. Area-optimized JTE simulations for 4.5 kV non ion-implanted SiC BJT[J]. Materials Science Forum, 2013, 740-742: 974. doi: 10.4028/www.scientific.net/MSF.740-742

[5]

Raynaud C, Lazar M, Planson D. Design, fabrication and characterization of 5 kV 4H-SiC p+n planar bipolar diodes protected by junction termination extension[J]. Materials Science Forum, 2004, 457-460: 1033. doi: 10.4028/www.scientific.net/MSF.457-460

[6]

Mihaila A P, Udrea F, Rashid S J. Evaluation of termination techniques for 4H-SiC PiN diodes and trench JFETs[J]. Materials Science Forum, 2007, 556/557: 925. doi: 10.4028/www.scientific.net/MSF.556-557

[7]

Vassilevski K, Nikitina I, Horsfal A. High voltage silicon carbide Schottky diodes with single zone junction termination extension[J]. Materials Science Forum, 2007, 556/557: 873. doi: 10.4028/www.scientific.net/MSF.556-557

[8]

Wang X, Cooper J A. Optimization of JTE edge terminations for 10 kV power devices in 4H-SiC[J]. Materials Science Forum, 2004, 457-460: 1257. doi: 10.4028/www.scientific.net/MSF.457-460

[9]

Kaji N, Niwa H, Suda J. Ultrahigh-voltage (20 kV) SiC PiN diodes with a space-modulated JTE and lifetime enhancement process via thermal oxidation[J]. Materials Science Forum, 2014, 778-780: 832. doi: 10.4028/www.scientific.net/MSF.778-780

[10]

Bartolf H, Sundaramoorthy V, Mihaila A. Study of 4H-SiC Schottky diode designs for 3.3 kV applications[J]. Materials Science Forum, 2014, 778-780: 795. doi: 10.4028/www.scientific.net/MSF.778-780

[11]

ATLAS User's Manual, www.silvaco.com

[12]

Wang Yiyu, Peng Zhaoyan, Shen Huajun. Characterization of the effects of nitrogen and hydrogen passivation on SiO2/4H-SiC interface by low temperature conductance measurements[J]. Journal of Semiconductors, 2016, 37(2): 026001. doi: 10.1088/1674-4926/37/2/026001

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R H Huang, Y H Tao, L Wang, G Chen, S Bai, R Li, Z F Zhao. Development of 17 kV 4H-SiC PiN diode[J]. J. Semicond., 2016, 37(8): 084001. doi: 10.1088/1674-4926/37/8/084001.

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Manuscript received: 06 December 2015 Manuscript revised: 16 March 2016 Online: Published: 01 August 2016

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