Fig. 1.
(Color online) Structure of simulated InAsP-Based HEMT.
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S. Derrouiche, B. Bouazza, C. Sayah. Modulation of drain current as a function of energies substrate for InP HEMT devices[J]. Journal of Semiconductors, 2018, 39(11): 114002. doi: 10.1088/1674-4926/39/11/114002
S Derrouiche, B Bouazza, C Sayah, Modulation of drain current as a function of energies substrate for InP HEMT devices[J]. J. Semicond., 2018, 39(11): 114002. doi: 10.1088/1674-4926/39/11/114002.
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Modulation of drain current as a function of energies substrate for InP HEMT devices
doi: 10.1088/1674-4926/39/11/114002
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Abstract
We present the drain current modulation for an HEMT using the TCAD SILVACO simulation tool with a drift–diffusion model at ambient temperature. The obtained results show that the decreases of substrate energies induce the decreasing of the obtained drain current similarly to the transconductance, which described the device due to increasing the transferred electrons concentration towards the substrate region, consequently to increase the molar fraction where the concentration of transferred electrons increases from 49 × 1019 to 65 × 1019 cm−3 when the molar fraction increases from 0.1 to 0.9. On the other hand, the decrease of molar fraction from 0.9 to 0.1 induces the increasing of drain current by 63%, where it increases from 1.1 mA/mm to 3 mA/mm at Vgs = 0.6 V and Vds = 1 V. This fact leads to ensuring the possibility of using the obtained results of this work related to drain current for producing performances devices that brings together the AC characteristics of HEMT with a weak drain current, which is important in the bioengineering domain. -
References
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