J. Semicond. > Volume 39 > Issue 7 > Article Number: 074001

Small-signal model parameter extraction of E-mode N-polar GaN MOS-HEMT using optimization algorithms and its comparison

D. K. Panda , G. Amarnath and T. R. Lenka ,

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Abstract: An improved small-signal parameter extraction technique for short channel enhancement-mode N-polar GaN MOS-HEMT is proposed, which is a combination of a conventional analytical method and optimization techniques. The extrinsic parameters such as parasitic capacitance, inductance and resistance are extracted under the pinch-off condition. The intrinsic parameters of the small-signal equivalent circuit (SSEC) have been extracted including gate forward and backward conductance. Different optimization algorithms such as PSO, Quasi Newton and Firefly optimization algorithm is applied to the extracted parameters to minimize the error between modeled and measured S-parameters. The different optimized SSEC models have been validated by comparing the S-parameters and unity current-gain with TCAD simulations and available experimental data from the literature. It is observed that the Firefly algorithm based optimization approach accurately extracts the small-signal model parameters as compared to other optimization algorithm techniques with a minimum error percentage of 1.3%.

Key words: FireflyGaNMOS-HEMTPSOSSECTCAD

Abstract: An improved small-signal parameter extraction technique for short channel enhancement-mode N-polar GaN MOS-HEMT is proposed, which is a combination of a conventional analytical method and optimization techniques. The extrinsic parameters such as parasitic capacitance, inductance and resistance are extracted under the pinch-off condition. The intrinsic parameters of the small-signal equivalent circuit (SSEC) have been extracted including gate forward and backward conductance. Different optimization algorithms such as PSO, Quasi Newton and Firefly optimization algorithm is applied to the extracted parameters to minimize the error between modeled and measured S-parameters. The different optimized SSEC models have been validated by comparing the S-parameters and unity current-gain with TCAD simulations and available experimental data from the literature. It is observed that the Firefly algorithm based optimization approach accurately extracts the small-signal model parameters as compared to other optimization algorithm techniques with a minimum error percentage of 1.3%.

Key words: FireflyGaNMOS-HEMTPSOSSECTCAD



References:

[1]

Panda D K, Lenka T R. Modeling and simulation of enhancement mode p-GaN Gate AlGaN/GaN HEMT for RF circuit switch applications. J Semicond, 2017, 38(6): 064002

[2]

Panda D K, Lenka T R. Oxide thickness dependent compact model of channel noise for E-mode AlGaN/GaN MOS-HEMT. AEU - Int J Electron Commun, 2017, 82: 467

[3]

Jena K, Swain R, Lenka T R. Impact of barrier thickness on gate capacitance-modeling and comparative analysis of GaN based MOSHEMTs. J Semicond, 2015, 36(3): 034003

[4]

Panda D K, Lenka T R. Effects of trap density on drain current LFN and its model development for E-mode GaN MOS-HEMT. Superlattices Microstruct, 2017, 112: 374

[5]

Chen M. A 1–25 GHz GaN HEMT MMIC low-noise amplifier. IEEE Microwave Wireless Compon Lett, 20(10): 563

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Sun H F, Alt A R, Benedickter H, et al. High-speed and low-noise AlInN/GaN HEMTs on SiC. Phys Status Solidi A, 2011, 208(2): 429

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Chen M Q, Sutton W, Smorchkova, et al. A 1–25 GHz GaN HEMT MMIC low-noise amplifier. IEEE Microwave Wireless Compon Lett, 2010, 20(10): 563

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Sun H F, Alt A R, Benedickter H, et al. Low-noise microwave performance of 0.1 μm gate AlInN/GaN HEMTs on SiC. IEEE Microwave Wireless Compon Lett, 2010, 20(8): 453

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Li B, Wei L, Wen C. Static characteristics and short channel effect in enhancement-mode AlN/GaN/AlN N-polar MISFET with self-aligned source/drain regions. J Semicond, 2014, 35(12): 124006

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Singisetti U, Wong M H, Speck J S, et al. Enhancement-mode N-polar GaN MOS-HFET with 5-nm GaN channel, 510-mS/mm gm, and 0.66- ohm·mm Ron’. IEEE Electron Device Lett, 2012, 33(1): 6

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Essaadali R, Jarndal A, Kouki A B, et al. A new GaN HEMT equivalent circuit modeling technique based on X-parameters. IEEE Trans Microwave Theory Tech, 2016, 64(9): 2758

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Alt A R, Marti D, Bolognesi C R. Transistor modeling: robust small-signal equivalent circuit extraction in various HEMT technologies. IEEE Microwave Mag, 2013, 14(4): 83

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Du J, Xu P, Wang K, et al. Small-signal modeling of AlGaN/GaN HEMTs with consideration of CPW capacitances. J Semicond, 2015, 36(3): 34009

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Crupi G, Schreurs D M M P, Caddemi A, et al. High-frequency extraction of the extrinsic capacitances for GaN HEMT technology. IEEE Microwave Wireless Compon Lett, 2011, 21(8): 445

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Resca D, Raffo A, Santarelli A, et al. Scalable equivalent circuit FET model for MMIC design identified through FW-EM analyses. IEEE Trans Microwave Theory Tech, 2009, 57(2): 245

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Snowden C M. Large-signal microwave characterization of AlGaAs/GaAs HBT's based on a physics-based electrothermal model. IEEE Trans Microwave Theory Tech, 1997, 45(1): 58

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Majumdar A, Chatterjee S, Chatterjee S, et al. Optimization of intrinsic elements from small-signalmodel of GaN HEMT by using PSO. IEEE Applied Electromagnetics Conference (AEMC), Guwahati, 2015: . 1

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Kumar R, Rajan A, Talukdar F A, et al. Optimization of 5.5-GHz CMOS LNA parameters using firefly algorithm. Neural Computing and Applications, 2016: 1

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Brady R G, Oxley C H, Brazil T J. An improved small-signal parameter-extraction algorithm for GaN HEMT devices. IEEE Trans Microwave Theory Tech, 2008, 56(7): 1535

[20]

Dambrine G, Cappy A, Heliodore F, et al. A new method for determining the FET small-signal equivalent circuit. IEEE Trans Microwave Theory Tech, 1988, 36(7): 1151

[21]

Jarndal A, Kompa G. A new small-signal modeling approach applied to GaN devices. IEEE Trans Microwave Theory Tech, 2005, 53(11): 3440

[22]

Yanagawa S, Ishihara H, Ohtomo M. Analytical method for determining equivalent circuit parameters of GaAs FETs. IEEE Trans Microwave Theory Tech, 1996, 44(10): 1637

[23]

Nidhi, Dasgupta S, Keller S, et al. N-Polar GaN/AlN MIS-HEMT with fMAX of 204 GHz for Ka-band applications. IEEE Electron Device Lett, 2011, 32(12): 1683

[1]

Panda D K, Lenka T R. Modeling and simulation of enhancement mode p-GaN Gate AlGaN/GaN HEMT for RF circuit switch applications. J Semicond, 2017, 38(6): 064002

[2]

Panda D K, Lenka T R. Oxide thickness dependent compact model of channel noise for E-mode AlGaN/GaN MOS-HEMT. AEU - Int J Electron Commun, 2017, 82: 467

[3]

Jena K, Swain R, Lenka T R. Impact of barrier thickness on gate capacitance-modeling and comparative analysis of GaN based MOSHEMTs. J Semicond, 2015, 36(3): 034003

[4]

Panda D K, Lenka T R. Effects of trap density on drain current LFN and its model development for E-mode GaN MOS-HEMT. Superlattices Microstruct, 2017, 112: 374

[5]

Chen M. A 1–25 GHz GaN HEMT MMIC low-noise amplifier. IEEE Microwave Wireless Compon Lett, 20(10): 563

[6]

Sun H F, Alt A R, Benedickter H, et al. High-speed and low-noise AlInN/GaN HEMTs on SiC. Phys Status Solidi A, 2011, 208(2): 429

[7]

Chen M Q, Sutton W, Smorchkova, et al. A 1–25 GHz GaN HEMT MMIC low-noise amplifier. IEEE Microwave Wireless Compon Lett, 2010, 20(10): 563

[8]

Sun H F, Alt A R, Benedickter H, et al. Low-noise microwave performance of 0.1 μm gate AlInN/GaN HEMTs on SiC. IEEE Microwave Wireless Compon Lett, 2010, 20(8): 453

[9]

Li B, Wei L, Wen C. Static characteristics and short channel effect in enhancement-mode AlN/GaN/AlN N-polar MISFET with self-aligned source/drain regions. J Semicond, 2014, 35(12): 124006

[10]

Singisetti U, Wong M H, Speck J S, et al. Enhancement-mode N-polar GaN MOS-HFET with 5-nm GaN channel, 510-mS/mm gm, and 0.66- ohm·mm Ron’. IEEE Electron Device Lett, 2012, 33(1): 6

[11]

Essaadali R, Jarndal A, Kouki A B, et al. A new GaN HEMT equivalent circuit modeling technique based on X-parameters. IEEE Trans Microwave Theory Tech, 2016, 64(9): 2758

[12]

Alt A R, Marti D, Bolognesi C R. Transistor modeling: robust small-signal equivalent circuit extraction in various HEMT technologies. IEEE Microwave Mag, 2013, 14(4): 83

[13]

Du J, Xu P, Wang K, et al. Small-signal modeling of AlGaN/GaN HEMTs with consideration of CPW capacitances. J Semicond, 2015, 36(3): 34009

[14]

Crupi G, Schreurs D M M P, Caddemi A, et al. High-frequency extraction of the extrinsic capacitances for GaN HEMT technology. IEEE Microwave Wireless Compon Lett, 2011, 21(8): 445

[15]

Resca D, Raffo A, Santarelli A, et al. Scalable equivalent circuit FET model for MMIC design identified through FW-EM analyses. IEEE Trans Microwave Theory Tech, 2009, 57(2): 245

[16]

Snowden C M. Large-signal microwave characterization of AlGaAs/GaAs HBT's based on a physics-based electrothermal model. IEEE Trans Microwave Theory Tech, 1997, 45(1): 58

[17]

Majumdar A, Chatterjee S, Chatterjee S, et al. Optimization of intrinsic elements from small-signalmodel of GaN HEMT by using PSO. IEEE Applied Electromagnetics Conference (AEMC), Guwahati, 2015: . 1

[18]

Kumar R, Rajan A, Talukdar F A, et al. Optimization of 5.5-GHz CMOS LNA parameters using firefly algorithm. Neural Computing and Applications, 2016: 1

[19]

Brady R G, Oxley C H, Brazil T J. An improved small-signal parameter-extraction algorithm for GaN HEMT devices. IEEE Trans Microwave Theory Tech, 2008, 56(7): 1535

[20]

Dambrine G, Cappy A, Heliodore F, et al. A new method for determining the FET small-signal equivalent circuit. IEEE Trans Microwave Theory Tech, 1988, 36(7): 1151

[21]

Jarndal A, Kompa G. A new small-signal modeling approach applied to GaN devices. IEEE Trans Microwave Theory Tech, 2005, 53(11): 3440

[22]

Yanagawa S, Ishihara H, Ohtomo M. Analytical method for determining equivalent circuit parameters of GaAs FETs. IEEE Trans Microwave Theory Tech, 1996, 44(10): 1637

[23]

Nidhi, Dasgupta S, Keller S, et al. N-Polar GaN/AlN MIS-HEMT with fMAX of 204 GHz for Ka-band applications. IEEE Electron Device Lett, 2011, 32(12): 1683

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D K Panda, G Amarnath, T R Lenka, Small-signal model parameter extraction of E-mode N-polar GaN MOS-HEMT using optimization algorithms and its comparison[J]. J. Semicond., 2018, 39(7): 074001. doi: 10.1088/1674-4926/39/7/074001.

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Manuscript received: 06 June 2017 Manuscript revised: 20 November 2017 Online: Accepted Manuscript: 04 April 2018 Uncorrected proof: 07 May 2018 Published: 01 July 2018

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