Fig. 1.
(Color online) (a) The schematic 3-D views and (b) optical image of the circular a-IGZO TFTs.
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| Citation: |
Rui Geng, Yuxin Gong. High performance active image sensor pixel design with circular structure oxide TFT[J]. Journal of Semiconductors, 2019, 40(2): 022402. doi: 10.1088/1674-4926/40/2/022402
R Geng, Y X Gong, High performance active image sensor pixel design with circular structure oxide TFT[J]. J. Semicond., 2019, 40(2): 022402. doi: 10.1088/1674-4926/40/2/022402.
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High performance active image sensor pixel design with circular structure oxide TFT
doi: 10.1088/1674-4926/40/2/022402
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Abstract
We report a high-performance active image sensor pixel design by utilizing amorphous-indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) with a circular structure. The TFT, configured with the inner electrode as source and outer electrode as drain, typically exhibits good saturation electrical characteristics, where the device has a constant drive current despite variations in drain voltage. Due to the very high output resistance exhibited by this asymmetric TFT structure with a circular shape, the pixel circuit considered here in common-drain configuration provides a higher gain of operation than a pixel circuit implemented with rectangular a-IGZO TFTs. They can be used as driving TFTs in active image sensor circuits. They are, therefore, good candidates for digital X-ray detectors in applications such as medical diagnostic procedures.-
Keywords:
- a-IGZO TFT,
- active image sensor,
- circular structure,
- high gain
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References
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Proportional views
