J. Semicond. > 2022, Volume 43 > Issue 3 > 030201, doi: 10.1088/1674-4926/43/3/030201

RESEARCH HIGHLIGHTS

2D arsenenes

Yi Hu1, 2, Junchuan Liang1, 2, Lixiu Zhang3, Zhong Jin1, 2, and Liming Ding3,

+ Author Affiliations

 Corresponding author: Zhong Jin, zhongjin@nju.edu.cn; Liming Ding, ding@nanoctr.cn

PDF

Turn off MathJax



[1]
Novoselov K S, Geim A K, Morozov S V, et al. Electric field effect in atomically thin carbon films. Science, 2004, 306, 666 doi: 10.1126/science.1102896
[2]
Tan C, Cao X, Wu X J, et al. Recent advances in ultrathin two-dimensional nanomaterials. Chem Rev, 2017, 117, 6225 doi: 10.1021/acs.chemrev.6b00558
[3]
Li L, Yu Y, Ye G J, et al. Black phosphorus field-effect transistors. Nat Nanotechnol, 2014, 9, 372 doi: 10.1038/nnano.2014.35
[4]
Chhowalla M, Shin H S, Eda G, et al. The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets. Nat Chem, 2013, 5, 263 doi: 10.1038/nchem.1589
[5]
Hu Y, Chen T, Wang X, et al. Controlled growth and photoconductive properties of hexagonal SnS2 nanoflakes with mesa-shaped atomic steps. Nano Res, 2017, 10, 1434 doi: 10.1007/s12274-017-1525-3
[6]
Kamal C, Ezawa M. Arsenene: two-dimensional buckled and puckered honeycomb arsenic systems. Phys Rev B, 2015, 91, 085423 doi: 10.1103/PhysRevB.91.085423
[7]
Zhang S, Yan Z, Li Y, et al. Atomically thin arsenene and antimonene: semimetal-semiconductor and indirect-direct band-gap transitions. Angew Chem Int Ed, 2015, 54, 3112 doi: 10.1002/anie.201411246
[8]
Zhang S, Xie M, Li F, et al. Semiconducting group 15 monolayers: a broad range of band gaps and high carrier mobilities. Angew Chem Int Ed, 2016, 55, 1666 doi: 10.1002/anie.201507568
[9]
Pizzi G, Gibertini M, Dib E, et al. Performance of arsenene and antimonene double-gate MOSFETs from first principles. Nat Commun, 2016, 7, 1 doi: 10.1038/ncomms12585
[10]
Wang Y, Ye M, Weng M, et al. Electrical contacts in monolayer arsenene devices. ACS Appl Mater Interfaces, 2017, 9, 29273 doi: 10.1021/acsami.7b08513
[11]
Wang Y, Huang P, Ye M, et al. Many-body effect, carrier mobility, and device performance of hexagonal arsenene and antimonene. Chem Mater, 2017, 29, 2191 doi: 10.1021/acs.chemmater.6b04909
[12]
Tsai H S, Wang S W, Hsiao C H, et al. Direct synthesis and practical bandgap estimation of multilayer arsenene nanoribbons. Chem Mater, 2016, 28, 425 doi: 10.1021/acs.chemmater.5b04949
[13]
Chen Y, Chen C, Kealhofer R, et al. Black arsenic: a layered semiconductor with extreme in-plane anisotropy. Adv Mater, 2018, 30, 1800754 doi: 10.1002/adma.201800754
[14]
Zhong M, Xia Q, Pan L, et al. Thickness-dependent carrier transport characteristics of a new 2D elemental semiconductor: black arsenic. Adv Funct Mater, 2018, 28, 1802581 doi: 10.1002/adfm.201802581
[15]
Qi Z H, Hu Y, Jin Z, et al. Tuning the liquid-phase exfoliation of arsenic nanosheets by interaction with various solvents. Phys Chem Chem Phys, 2019, 21, 12087 doi: 10.1039/C9CP01052A
[16]
Wang X, Hu Y, Mo J, et al. Arsenene: a potential therapeutic agent for acute promyelocytic leukaemia cells by acting on nuclear proteins. Angew Chem Int Ed, 2020, 59, 5151 doi: 10.1002/anie.201913675
[17]
Hu Y, Qi Z H, Lu J, et al. Van der Waals epitaxial growth and interfacial passivation of two-dimensional single-crystalline few-layer gray arsenic nanoflakes. Chem Mater, 2019, 31, 4524 doi: 10.1021/acs.chemmater.9b01151
[18]
Hu Y, Wang X, Qi Z, et al. Wet chemistry vitrification and metal-to-semiconductor transition of 2D gray arsenene nanoflakes. Adv Funct Mater, 2021, 31, 2106529 doi: 10.1002/adfm.202106529
Fig. 1.  (Color online) Crystal structures, Brillouin zones, phonon spectra and electrical band structures of (a) puckered and (b) buckled arsenenes. Reproduced with permission[6], Copyright 2015, American Physical Society. (c) Electrical band structures of buckled arsenene with different layer numbers. Reproduced with permission[7], Copyright 2015, Wiley-VCH. (d) Schematic illustration for double-gated MOSFET of arsenene. Reproduced with permission[9], Copyright 2016, Springer Nature.

DownLoad: Full-Size Img PowerPoint
Fig. 2.  (Color online) (a) Cross-sectional image of arsenene grown on InAs substrate. Reproduced with permission[12], Copyright 2016, American Physical Society. (b) AFM image of black arsenene exfoliated from natural minerals. Reproduced with permission[13], Copyright 2018, Wiley-VCH. (c) Transfer characteristic of a monolayer black arsenene device. Reproduced with permission[14], Copyright 2018, Wiley-VCH. (d) Schematic illustration for liquid-phase exfoliation of arsenene from bulk gray arsenic crystals. Reproduced with permission[15], Copyright 2016, Royal Society of Chemistry. (e) Schematic illustration for growth of gray arsenene nanoflakes on mica. Reproduced with permission[17], Copyright 2019, American Chemical Society.

DownLoad: Full-Size Img PowerPoint
[1]
Novoselov K S, Geim A K, Morozov S V, et al. Electric field effect in atomically thin carbon films. Science, 2004, 306, 666 doi: 10.1126/science.1102896
[2]
Tan C, Cao X, Wu X J, et al. Recent advances in ultrathin two-dimensional nanomaterials. Chem Rev, 2017, 117, 6225 doi: 10.1021/acs.chemrev.6b00558
[3]
Li L, Yu Y, Ye G J, et al. Black phosphorus field-effect transistors. Nat Nanotechnol, 2014, 9, 372 doi: 10.1038/nnano.2014.35
[4]
Chhowalla M, Shin H S, Eda G, et al. The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets. Nat Chem, 2013, 5, 263 doi: 10.1038/nchem.1589
[5]
Hu Y, Chen T, Wang X, et al. Controlled growth and photoconductive properties of hexagonal SnS2 nanoflakes with mesa-shaped atomic steps. Nano Res, 2017, 10, 1434 doi: 10.1007/s12274-017-1525-3
[6]
Kamal C, Ezawa M. Arsenene: two-dimensional buckled and puckered honeycomb arsenic systems. Phys Rev B, 2015, 91, 085423 doi: 10.1103/PhysRevB.91.085423
[7]
Zhang S, Yan Z, Li Y, et al. Atomically thin arsenene and antimonene: semimetal-semiconductor and indirect-direct band-gap transitions. Angew Chem Int Ed, 2015, 54, 3112 doi: 10.1002/anie.201411246
[8]
Zhang S, Xie M, Li F, et al. Semiconducting group 15 monolayers: a broad range of band gaps and high carrier mobilities. Angew Chem Int Ed, 2016, 55, 1666 doi: 10.1002/anie.201507568
[9]
Pizzi G, Gibertini M, Dib E, et al. Performance of arsenene and antimonene double-gate MOSFETs from first principles. Nat Commun, 2016, 7, 1 doi: 10.1038/ncomms12585
[10]
Wang Y, Ye M, Weng M, et al. Electrical contacts in monolayer arsenene devices. ACS Appl Mater Interfaces, 2017, 9, 29273 doi: 10.1021/acsami.7b08513
[11]
Wang Y, Huang P, Ye M, et al. Many-body effect, carrier mobility, and device performance of hexagonal arsenene and antimonene. Chem Mater, 2017, 29, 2191 doi: 10.1021/acs.chemmater.6b04909
[12]
Tsai H S, Wang S W, Hsiao C H, et al. Direct synthesis and practical bandgap estimation of multilayer arsenene nanoribbons. Chem Mater, 2016, 28, 425 doi: 10.1021/acs.chemmater.5b04949
[13]
Chen Y, Chen C, Kealhofer R, et al. Black arsenic: a layered semiconductor with extreme in-plane anisotropy. Adv Mater, 2018, 30, 1800754 doi: 10.1002/adma.201800754
[14]
Zhong M, Xia Q, Pan L, et al. Thickness-dependent carrier transport characteristics of a new 2D elemental semiconductor: black arsenic. Adv Funct Mater, 2018, 28, 1802581 doi: 10.1002/adfm.201802581
[15]
Qi Z H, Hu Y, Jin Z, et al. Tuning the liquid-phase exfoliation of arsenic nanosheets by interaction with various solvents. Phys Chem Chem Phys, 2019, 21, 12087 doi: 10.1039/C9CP01052A
[16]
Wang X, Hu Y, Mo J, et al. Arsenene: a potential therapeutic agent for acute promyelocytic leukaemia cells by acting on nuclear proteins. Angew Chem Int Ed, 2020, 59, 5151 doi: 10.1002/anie.201913675
[17]
Hu Y, Qi Z H, Lu J, et al. Van der Waals epitaxial growth and interfacial passivation of two-dimensional single-crystalline few-layer gray arsenic nanoflakes. Chem Mater, 2019, 31, 4524 doi: 10.1021/acs.chemmater.9b01151
[18]
Hu Y, Wang X, Qi Z, et al. Wet chemistry vitrification and metal-to-semiconductor transition of 2D gray arsenene nanoflakes. Adv Funct Mater, 2021, 31, 2106529 doi: 10.1002/adfm.202106529

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 1601 Times PDF downloads: 107 Times Cited by: 0 Times

    History

    Received: 27 October 2021 Revised: Online: Accepted Manuscript: 28 October 2021Uncorrected proof: 28 February 2022Published: 10 March 2022

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 2022  >  43(3): 030201
      Yi Hu, Junchuan Liang, Lixiu Zhang, Zhong Jin, Liming Ding. 2D arsenenes[J]. Journal of Semiconductors, 2022, 43(3): 030201. doi: 10.1088/1674-4926/43/3/030201 Y Hu, J C Liang, L X Zhang, Z Jin, L M Ding, 2D arsenenes[J]. J. Semicond., 2022, 43(3): 030201. doi: 10.1088/1674-4926/43/3/030201.Export: BibTex EndNote
      Citation:
      Yi Hu, Junchuan Liang, Lixiu Zhang, Zhong Jin, Liming Ding. 2D arsenenes[J]. Journal of Semiconductors, 2022, 43(3): 030201. doi: 10.1088/1674-4926/43/3/030201

      Y Hu, J C Liang, L X Zhang, Z Jin, L M Ding, 2D arsenenes[J]. J. Semicond., 2022, 43(3): 030201. doi: 10.1088/1674-4926/43/3/030201.
      Export: BibTex EndNote
      shu

      2D arsenenes

      doi: 10.1088/1674-4926/43/3/030201
      • 1.

        Key Laboratory of Mesoscopic Chemistry (MOE), School of Chemistry and Chemical Engineering, Nanjing University, Nanjing 210023, China

      • 2.

        Shenzhen Research Institute of Nanjing University, Shenzhen 518063, China

      • 3.

        Center for Excellence in Nanoscience (CAS), Key Laboratory of Nanosystem and Hierarchical Fabrication (CAS), National Center for Nanoscience and Technology, Beijing 100190, China

      More Information
      • Author Bio:

        Yi Hu received his BS in Chemistry from Sichuan University in 2014. He got his PhD under the supervision of Prof. Zhong Jin in School of Chemistry and Chemical Engineering at Nanjing University. His research focuses on 2D nanomaterials and related devices

        Junchuan Liang received his BS in Lanzhou University in 2019. He is now pursuing his PhD under the supervision of Prof. Zhong Jin in School of Chemistry and Chemical Engineering at Nanjing University. His research focuses on 2D nanomaterials

        Lixiu Zhang got her BS degree from Soochow University in 2019. Now she is a PhD student at University of Chinese Academy of Sciences under the supervision of Prof. Liming Ding. Her research focuses on perovskite solar cells

        Zhong Jin received his BS (2003) and PhD (2008) at Peking University. He worked as a postdoc at Rice University (2008–2010) and Massachusetts Institute of Technology (2010–2014). At 2014, he was appointed as a professor in School of Chemistry and Chemical Engineering at Nanjing University. His research focuses on the development of advanced materials and devices for clean energy conversion and storage

        Liming Ding got his PhD from University of Science and Technology of China (was a joint student at Changchun Institute of Applied Chemistry, CAS). He started his research on OSCs and PLEDs in Olle Inganäs Lab in 1998. Later on, he worked at National Center for Polymer Research, Wright-Patterson Air Force Base and Argonne National Lab (USA). He joined Konarka as a Senior Scientist in 2008. In 2010, he joined National Center for Nanoscience and Technology as a full professor. His research focuses on innovative materials and devices. He is RSC Fellow, the nominator for Xplorer Prize, and the Associate Editor for Journal of Semiconductors

      • Corresponding author: zhongjin@nju.edu.cn; ding@nanoctr.cn
      • Received Date: 2021-10-27
      • Published Date: 2022-03-10

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return