Chin. J. Semicond. > Volume 18 > Issue 11 > Article Number: 877

计入多晶硅耗尽效应的深亚微米MOSFET开启电压模型

张文良 and 杨之廉

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Abstract: 本文提出了一个深亚微米MOSFET的开启电压的解析模型.它计入了影响开启电压的诸多二级效应,例如短沟效应、窄沟效应、漏感应势垒下降(DIBL)效应以及衬底的非均匀掺杂等效应.此外,模型还考虑了极短沟长器件的多晶硅耗尽效应.模型的计算结果和数值器件模拟的结果十分相符.

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History

Manuscript received: 19 August 2015 Manuscript revised: Online: Published: 01 November 1997

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