Chin. J. Semicond. > Volume 4 > Issue 6 > Article Number: 555

a-Si:H材料中的场致电导漂移

熊绍珍 and 孙钟林

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Abstract: 本文对某些a-Si:H材料,在外电场作用下,电导随时间漂移的现象进行了测量和分析.实验发现,该效应与所施加的电场强度有明显关系.场致电导漂移还与场致热激电流峰的出现相联系,按E_t=23KT计算,在较高电场(~2×10~3V/cm)作用下可出现两个能级,分别为E_c-E_t_1≈0.55ev与E_c-E_t_2≈0.62ev.文章最后对产生场致电导漂移的机理及它与Staebler-Wronski效应之间的关系进行了讨论.

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History

Manuscript received: 20 August 2015 Manuscript revised: Online: Published: 01 June 1983

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