Chin. J. Semicond. > Volume 17 > Issue 9 > Article Number: 706

MeV Si离子注入对BF_2注入Si样品特性的影响

赵清太,王忠烈

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Abstract: 本文利用卢瑟福背散射及沟道(RBS/C)技术,二次离子质谱(SIMS)技术等研究了MeVSi离子束轰击对BF2注入Si样品特性的影响.结果表明,退火后在BF2注入形成的PN结结区内仍有大量的二次缺陷.退火前附加一次MeVSi离子轰击可以有效地消除BF2注入区内的二次缺陷,抑制B原子的扩散,并提高B原子的电激活率.

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History

Manuscript received: 18 August 2015 Manuscript revised: Online: Published: 01 September 1996

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