Chin. J. Semicond. > Volume 12 > Issue 10 > Article Number: 619

用XPS研究快速热退火形成TiSi_2的热氧化

陈存礼 , 李建年 and 华文玉

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Abstract: 用XPS结合AES、SEM、XRD分析研究了快速热退火形成的TiSi_2经100—1000℃、20—60 的热氧化行为.TiSi_2表面由SiO_2+ TiO_2组成的混合层随着氧化温度的升高或是氧化时间的延长向SiO_2层过渡.提出一个“氧化时间两个阶段”的模型解释了实验结果.

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History

Manuscript received: 19 August 2015 Manuscript revised: Online: Published: 01 October 1991

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