Chin. J. Semicond. > Volume 10 > Issue 2 > Article Number: 93

等电子施、受主杂质共掺的磷化镓发光特性和能量转移

刘晓 , 江炳熙 , 林秀华 , 廖远琰 and 袁路娃

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Abstract: 本文研究了液相外延生长的不同掺Bi,N浓度GaP∶(Bi_7N)材料的低温光致荧光光谱,观察到了N谱线“猝灭”和Bi束缚激子发光增强的现象.这可以解释为束缚激子由等电子受主N向等电子施主Bi隧穿能量转移的结果.变激发密度下各中心发光强度的变化关系以及与GaP∶(Bi)材料的实验结果比较,为这一能量转移过程提供了进一步的论据.

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History

Manuscript received: 19 August 2015 Manuscript revised: Online: Published: 01 February 1989

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