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Chin. J. Semicond. > Volume 10 > Issue 12 > Article Number: 960

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硅衬底上GaAlAs/GaAs单量子阱激光器

庄婉如 , 石志文 , 杨培生 , 梅野正義 , 神保孝志 and 曾我哲夫

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Abstract: 采用MOCVD方法在硅衬底上生长了带应力超晶格的GaAlAs/GaAs单量子阱外延片,并用质子轰击隔离法制成10微米条形单量子阱激光器.在室温下加脉冲电流(重复频率26KHz,脉宽1μs)观察到受激发射.最低阈电流92mA、激射波长849.2nm,外微分量子效率11％.

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History

Manuscript received: 19 August 2015 Manuscript revised: Online: Published: 01 December 1989

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