Chin. J. Semicond. > Volume 18 > Issue 11 > Article Number: 832

(113)B-GaAs/Al_(0.3)Ga_(0.7)As单量子阱结构的光致发光谱研究

陈定钦 , 邢益荣 , 李国华 , 朱勤生 , 曹作萍 , 张广泽 , 肖君 , 吴汲安 and 钟战天

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Abstract: 光致发光(PL)实验表明;与(001)衬底比较,(113)B-GaAs/Al0.3Ga0.7As单量子阱结构(SQW’s)具有增强的光跃迁几率,它被归因于(113)B-GaAs阱中较大的重空穴有效质量mhh结果给出:这个数值比以前所报道的都高.

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History

Manuscript received: 19 August 2015 Manuscript revised: Online: Published: 01 November 1997

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