J. Semicond. > Volume 37 > Issue 5 > Article Number: 055002

Monolithically integrated enhancement/depletion-mode AlGaN/GaN HEMTsSRAM unit and voltage level shifter using fluorine plasma treatment

Yonghe Chen 1, , , Xuefeng Zheng 1, , Jincheng Zhang 1, , Xiaohua Ma 2, and Yue Hao 1, ,

+ Author Affilications + Find other works by these authors

PDF

Abstract: A GaN-based E/D mode direct-couple logic 6 transistors SRAM unit and a voltage level shifter were designed and fabricated. E-mode and D-mode AlGaN/GaN HEMTs were integrated in one wafer using fluorine plasma treatment and using a moderate AlGaN barrier layer heterojunction structure. The 6 transistors SRAM unit consists of two symmetrical E/D mode inverters and two E-mode switch HEMTs. The output low and high voltage of the SRAM unit are 0.95 and 0.07 V at a voltage supply of 1 V. The voltage level shifter lowers the supply voltage using four Ni-AlGaN Schottky diodes in a series at a positive supply voltage of 6 V and a negative supply voltage of -6 V. By controlling the states of inverter modules of the level shifter in turn, the level shifter offers two channel voltage outputs of -0.5 and -5 V. The flip voltage of the level shifter is 0.76 V. Both the SRAM unit and voltage shifter operate correctly, demonstrating the promising potential for GaN-based E/D mode digital and analog integrated circuits. Several considerations are proposed to avoid the influence of threshold voltage degradation of D-mode and E-mode HEMT on the operation of the circuit.

Key words: AlGaN/GaNE/D modeSRAMvoltage level shifter

Abstract: A GaN-based E/D mode direct-couple logic 6 transistors SRAM unit and a voltage level shifter were designed and fabricated. E-mode and D-mode AlGaN/GaN HEMTs were integrated in one wafer using fluorine plasma treatment and using a moderate AlGaN barrier layer heterojunction structure. The 6 transistors SRAM unit consists of two symmetrical E/D mode inverters and two E-mode switch HEMTs. The output low and high voltage of the SRAM unit are 0.95 and 0.07 V at a voltage supply of 1 V. The voltage level shifter lowers the supply voltage using four Ni-AlGaN Schottky diodes in a series at a positive supply voltage of 6 V and a negative supply voltage of -6 V. By controlling the states of inverter modules of the level shifter in turn, the level shifter offers two channel voltage outputs of -0.5 and -5 V. The flip voltage of the level shifter is 0.76 V. Both the SRAM unit and voltage shifter operate correctly, demonstrating the promising potential for GaN-based E/D mode digital and analog integrated circuits. Several considerations are proposed to avoid the influence of threshold voltage degradation of D-mode and E-mode HEMT on the operation of the circuit.

Key words: AlGaN/GaNE/D modeSRAMvoltage level shifter



References:

[1]

Wu Y F, Saxler A, Moore M. 30-W/mm GaN HEMTs by field plate optimization[J]. IEEE Electron Device Lett, 2004, 25(3): 117.

[2]

Daumiller I, Kirchner C, Kamp M. Evaluation of the temperature stability of AlGaN/GaN heterostructure FETs[J]. IEEE Electron Device Lett, 1999, 20(9): 448.

[3]

Khan M A, Chen Q, Sun C J. Enhancement and depletion mode GaN/AlGaN heterostructure field effect transistors[J]. Appl Phys Lett, 1996, 68(4): 514.

[4]

Wang R, Cai Y, Cheng Z. A planar integration process for E/D-mode AlGaN/GaN HEMT DCFL integrated circuits[J]. IEEE Compound Semiconductor Integrated Circuit Symposium, 2006: 261.

[5]

Ross T N, Hettak K, Cormier G. Design of X-band GaN phase shifters[J]. IEEE Trans Microwave Theory & Tech, 2015, 63(1): 244.

[6]

Cao Mengyi, Lu Yang, Wei Jiaxing. Ka-band full-360o analog phase shifter with low insertion loss[J]. Journal of Semiconductors, 2014, 35(10): 105005.

[7]

Xie Yuanbin, Quan Si, Ma Xiaohua. Monolithically integrated enhancement/depletion-mode AlGaN/GaN HEMT D flip-flop using fluorine plasma treatment[J]. Journal of Semiconductors, 2011, 32(6): 065001.

[8]

Quan Si, Hao Yue, Ma Xiaohua. Enhancement-mode AlGaN/GaN HEMTs fabricated by fluorine plasma treatment[J]. Journal of Semiconductors, 2009, 30(12): 124002.

[9]

Yan D, Jiao J, Ren J. Forward current transport mechanisms in Ni/Au-AlGaN/GaN Schottky diodes[J]. J Appl Phys, 2013, 114(14): 144511.

[10]

Cai Y, Zhou Y, Lau K M. Control of threshold voltage of AlGaN/GaN HEMTs by fluoride-based plasma treatment: from depletion mode to enhancement mode[J]. IEEE Trans Electron Devices, 2006, 53(9): 2207.

[11]

Cai Y, Cheng Z, Tang W C W. Monolithic integration of enhancement- and depletion-mode AlGaN/GaN HEMTs for GaN digital integrated circuits[J]. IEEE International Electron Devices Meeting, 2005, 4: 774.

[12]

Ambacher O, Smart J, Shealy J R. Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures[J]. J Appl Phys, 1999, 85(6): 3222.

[13]

Wang Chong, Zhang Jincheng, Hao Yue. Degradation under high-field stress and effects of UV irradiation on AlGaN/GaN HEMTs[J]. Chinese Journal of Semiconductors, 2006, 27(8): 1436.

[1]

Wu Y F, Saxler A, Moore M. 30-W/mm GaN HEMTs by field plate optimization[J]. IEEE Electron Device Lett, 2004, 25(3): 117.

[2]

Daumiller I, Kirchner C, Kamp M. Evaluation of the temperature stability of AlGaN/GaN heterostructure FETs[J]. IEEE Electron Device Lett, 1999, 20(9): 448.

[3]

Khan M A, Chen Q, Sun C J. Enhancement and depletion mode GaN/AlGaN heterostructure field effect transistors[J]. Appl Phys Lett, 1996, 68(4): 514.

[4]

Wang R, Cai Y, Cheng Z. A planar integration process for E/D-mode AlGaN/GaN HEMT DCFL integrated circuits[J]. IEEE Compound Semiconductor Integrated Circuit Symposium, 2006: 261.

[5]

Ross T N, Hettak K, Cormier G. Design of X-band GaN phase shifters[J]. IEEE Trans Microwave Theory & Tech, 2015, 63(1): 244.

[6]

Cao Mengyi, Lu Yang, Wei Jiaxing. Ka-band full-360o analog phase shifter with low insertion loss[J]. Journal of Semiconductors, 2014, 35(10): 105005.

[7]

Xie Yuanbin, Quan Si, Ma Xiaohua. Monolithically integrated enhancement/depletion-mode AlGaN/GaN HEMT D flip-flop using fluorine plasma treatment[J]. Journal of Semiconductors, 2011, 32(6): 065001.

[8]

Quan Si, Hao Yue, Ma Xiaohua. Enhancement-mode AlGaN/GaN HEMTs fabricated by fluorine plasma treatment[J]. Journal of Semiconductors, 2009, 30(12): 124002.

[9]

Yan D, Jiao J, Ren J. Forward current transport mechanisms in Ni/Au-AlGaN/GaN Schottky diodes[J]. J Appl Phys, 2013, 114(14): 144511.

[10]

Cai Y, Zhou Y, Lau K M. Control of threshold voltage of AlGaN/GaN HEMTs by fluoride-based plasma treatment: from depletion mode to enhancement mode[J]. IEEE Trans Electron Devices, 2006, 53(9): 2207.

[11]

Cai Y, Cheng Z, Tang W C W. Monolithic integration of enhancement- and depletion-mode AlGaN/GaN HEMTs for GaN digital integrated circuits[J]. IEEE International Electron Devices Meeting, 2005, 4: 774.

[12]

Ambacher O, Smart J, Shealy J R. Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures[J]. J Appl Phys, 1999, 85(6): 3222.

[13]

Wang Chong, Zhang Jincheng, Hao Yue. Degradation under high-field stress and effects of UV irradiation on AlGaN/GaN HEMTs[J]. Chinese Journal of Semiconductors, 2006, 27(8): 1436.

[1]

Wang Chong, Zhang Jinfeng, Quan Si, Hao Yue, Zhang Jincheng, Ma Xiaohua. An Enhancement-Mode AlGaN/GaN HEMT with Recessed-Gate. J. Semicond., 2008, 29(9): 1682.

[2]

Liu Zheng, Sun Yongjie, Li Shaoqing, Liang Bin. Circuit Simulation of SEU for SRAM Cells. J. Semicond., 2007, 28(1): 138.

[3]

Yang Yan, Wang Wenbo, Hao Yue. Ohmic Contact to an AlGaN/GaN Heterostructure. J. Semicond., 2006, 27(10): 1823.

[4]

Zhang Zhiguo, Yang Ruixia, Li Li, Feng Zhen, Wang Yong, Yang Kewu. Output Power of an AlGaN/GaN HFET on Sapphire Substrate. J. Semicond., 2006, 27(7): 1255.

[5]

Zhang Jincheng, Wang Chong, Yang Yan, Zhang, Zhang Jinfeng, Feng Qian, Li Peixian. Effect of an AlN Spacer Layer on AlGaN/GaN HEMTs. J. Semicond., 2005, 26(12): 2396.

[6]

Xie Yuanbin, Quan Si, Ma Xiaohua, Zhang Jincheng, Li Qingmin, Hao Yue. Monolithically integrated enhancement/depletion-mode AlGaN/GaN HEMT D flip-flop using fluorine plasma treatment. J. Semicond., 2011, 32(6): 065001. doi: 10.1088/1674-4926/32/6/065001

[7]

Futong Chu, Chao Chen, Xingzhao Liu. Breakdown voltage enhancement of AlGaN/GaN high electron mobility transistors by polyimide/chromium composite thin film passivation. J. Semicond., 2014, 35(3): 034007. doi: 10.1088/1674-4926/35/3/034007

[8]

Chong Wang, Chong Chen, Yunlong He, Xuefeng Zheng, Xiaohua Ma, Jincheng Zhang, Wei Mao, Yue Hao. Breakdown voltage and current collapse of F-plasma treated AlGaN/GaN HEMTs. J. Semicond., 2014, 35(1): 014008. doi: 10.1088/1674-4926/35/1/014008

[9]

Zhou Jin, Hao Yilong, Wu Guoying, Yang Zhijian, Zhang Guoyi. Properties of Schottky Contact in MSM UV Detectors Based on AlGaN/GaN Heterostructure. J. Semicond., 2005, 26(S1): 247.

[10]

Wei Ke, Liu Xinyu, He Zhijing, Wu Dexin. DC Characteristics of AlGaN/GaN HEMTs with a Field Plate Gate. J. Semicond., 2008, 29(3): 554.

[11]

Lü Changzhi, Feng Shiwei, Wang Dongfeng, Zhang Xiaoling, Xie Xuesong, He Yan, Zhang Hao, Xu Liguo, Yuan Mingwen, Li Xiaobai, Zeng Qingming. Characteristics Comparison of AlGaN/GaN HFET for Three Variant Vertical Structure. J. Semicond., 2005, 26(S1): 155.

[12]

Wang Xiaoliang, Hu Guoxin, Ma Zhiyong, Xiao Hongling, Wang Cuimei, Luo Weijun, Liu Xinyu, Chen Xiaojuan, Li Jianping, Li Jinmin, Qian He, Wang Zhanguo. MOCVD-Grown AlGaN/AlN/GaN HEMT Structure with High Mobility GaN Thin Layer as Channel on SiC. J. Semicond., 2006, 27(9): 1521.

[13]

Zheli Wang, Jianjun Zhou, Yuechan Kong, Cen Kong, Xun Dong, Yang Yang, Tangsheng Chen. Thin-barrier enhancement-mode AlGaN/GaN MIS-HEMT using ALD Al2O3 as gate insulator. J. Semicond., 2015, 36(9): 094004. doi: 10.1088/1674-4926/36/9/094004

[14]

Tao Gao, Ruimin Xu, Kai Zhang, Yuechan Kong, Jianjun Zhou, Cen Kong, Xinxin Yu, Xun Dong, Tangsheng Chen. High-performance enhancement-mode AlGaN/GaN MOS-HEMTs with fluorinated stack gate dielectrics and thin barrier layer. J. Semicond., 2016, 37(6): 064013. doi: 10.1088/1674-4926/37/6/064013

[15]

Zhang Junqin, Yang Yintang, Chai Changchun, Li Yuejin, Jia Hujun. Ohmic Contact Property of Ti/Al/Ni/Au on AlGaN/GaN Heterostructures for Application in Ultraviolet Detectors. J. Semicond., 2008, 29(11): 2187.

[16]

Chen Tangsheng, Zhang Bin, Ren Chunjiang, Jiao Gang, Zheng Weibin, Chen Chen. 14W X-Band AlGaN/GaN HEMT Power MMICs. J. Semicond., 2008, 29(6): 1027.

[17]

Luo Weijun, Chen Xiaojuan, Li Chengzhan, Liu Xinyu, He Zhijing, Wei Ke, Liang Xiaoxin, Wang Xiaoliang. Fabrication of a High-Performance 1mm AlGaN/GaN HEMT on SiC Substrate. J. Semicond., 2006, 27(11): 1981.

[18]

Ren Chunjiang, Chen Tangsheng, Jiao Gang, Chen Gang, Xue Fangshi, Chen Chen. Effects of NF3 Plasma Treatment Prior to SiN Passivation on the Characteristics of AlGaN/GaN HEMTs. J. Semicond., 2008, 29(12): 2385.

[19]

Wang Chong, Zhang Jincheng, Hao Yue, Yang Yan. Degradation Under High-Field Stress and Effects of UV Irradiation on AlGaN/GaN HEMTs. J. Semicond., 2006, 27(8): 1436.

[20]

Wang Chong, Yue Yuanzheng, Ma Xiaohua, Hao Yue, Feng Qian, Zhang Jincheng. Development and Characteristic Analysis of MOS AlGaN/GaN HEMTs. J. Semicond., 2008, 29(8): 1557.

Search

Advanced Search >>

GET CITATION

Y H Chen, X F Zheng, J C Zhang, X H Ma, Y Hao. Monolithically integrated enhancement/depletion-mode AlGaN/GaN HEMTsSRAM unit and voltage level shifter using fluorine plasma treatment[J]. J. Semicond., 2016, 37(5): 055002. doi: 10.1088/1674-4926/37/5/055002.

Export: BibTex EndNote

Article Metrics

Article views: 627 Times PDF downloads: 6 Times Cited by: 0 Times

History

Manuscript received: 27 August 2015 Manuscript revised: Online: Published: 01 May 2016

Email This Article

User name:
Email:*请输入正确邮箱
Code:*验证码错误