Chin. J. Semicond. > Volume 13 > Issue 7 > Article Number: 438

CZNTD Si中氧碳对缺陷-杂质复合体行为的影响

张一心 , 李朝勇 , 李光平 , 何秀坤 , 卢存刚 and 李祖华

+ Author Affiliations + Find other works by these authors

PDF

Abstract: 本文研究了CZNTD Si中氧碳和缺陷-杂质复合体的热处理行为.分析了辐照和退火中的氧碳沉淀、缺陷-杂质复合体的形成、演变与施主的关系.确定了辐照施主是很少的,而主要是退火中形成的新施主,并且碳对这种施主起着强烈的促进作用.

Search

Advanced Search >>

Article Metrics

Article views: 1373 Times PDF downloads: 625 Times Cited by: 0 Times

History

Manuscript received: 19 August 2015 Manuscript revised: Online: Published: 01 July 1992

Email This Article

User name:
Email:*请输入正确邮箱
Code:*验证码错误