Anisotropic 2D materials for post-Moore photoelectric devices

Dingdong Xie; Jie Jiang; Liming Ding

doi:10.1088/1674-4926/43/1/010201

J. Semicond. > 2022, Volume 43 > Issue 1 > 010201, doi: 10.1088/1674-4926/43/1/010201

RESEARCH HIGHLIGHTS

Anisotropic 2D materials for post-Moore photoelectric devices

Dingdong Xie¹, Jie Jiang^1, and Liming Ding^2,

+ Author Affiliations

Corresponding author: Jie Jiang, jiangjie@csu.edu.cn; Liming Ding, ding@nanoctr.cn

References

[1]	Novoselov K S, Geim A K, Morozov S V, et al. Electric field effect in atomically thin carbon films. Science, 2004, 306, 666 doi: 10.1126/science.1102896
[2]	Conti S, Pimpolari L, Calabrese G, et al. Low-voltage 2D materials-based printed field-effect transistors for integrated digital and analog electronics on paper. Nat Commun, 2020, 11, 3566 doi: 10.1038/s41467-020-17297-z
[3]	Dieny B, Prejbeanu I L, Garello K, et al. Opportunities and challenges for spintronics in the microelectronic industry. Nat Electron, 2020, 3, 446 doi: 10.1038/s41928-020-0461-5
[4]	Pi L, Hu C, Shen W, et al. Highly in-plane anisotropic 2D PdSe₂ for polarized photodetection with orientation selectivity. Adv Funct Mater, 2021, 31, 2006774 doi: 10.1002/adfm.202006774
[5]	Li G, Yin S, Tan C, et al. Fast Photothermoelectric response in CVD-grown PdSe₂ photodetectors with in-plane anisotropy. Adv Funct Mater, 2021, 31, 2104787 doi: 10.1002/adfm.202104787
[6]	Tian H, Guo Q, Xie Y, et al. Anisotropic black phosphorus synaptic device for neuromorphic applications. Adv Mater, 2016, 28, 4991 doi: 10.1002/adma.201600166
[7]	Du X, Tao L, Xu J, et al. Two-dimensional multibit optoelectronic memory with broadband spectrum distinction. Nat Commun, 2018, 9, 2966 doi: 10.1038/s41467-018-05397-w
[8]	Xiang D, Liu T, Wang J, et al. Anomalous broadband spectrum photodetection in 2D rhenium disulfide transistor. Adv Opt Mater, 2019, 7, 1901115 doi: 10.1002/adom.201901115
[9]	Qin J, Zhou F, Wang J, et al. Anisotropic signal processing with trigonal selenium nanosheet synaptic transistors. ACS Nano, 2020, 14, 10018 doi: 10.1021/acsnano.0c03124
[10]	Cao Y, Fatemi V, Demir A, et al. Correlated insulator behaviour at half-filling in magic angle graphene superlattices. Nature, 2018, 556, 80 doi: 10.1038/nature26154
[11]	Park J M, Cao Y, Watanabe K, et al. Tunable strongly coupled superconductivity in magic-angle twisted trilayer graphene. Nature, 2021, 590, 249 doi: 10.1038/s41586-021-03192-0
[12]	Cao Y, Rodan-Legrain D, Park J M, et al. Nematicity and competing orders in superconducting magic-angle graphene. Science, 2021, 372, 264 doi: 10.1126/science.abc2836

Fig. 1. (Color online) (a) Multilayer black phosphorus. (b) Schematic diagram of the polarization-sensitive photodetector based on anisotropic 2D materials. (c) Normalized photocurrents in the polar coordinates. Reproduced with permission^[4], Copyright 2020, John Wiley and Sons. (d) Three-terminal EGT to mimic the synapse behavior. Reproduced with permission^[9], Copyright 2020, American Chemical Society. (e) The EGT device with a pair of opposite electrodes. Reproduced with permission^[9], Copyright 2020, American Chemical Society. (f) Biological axon-multi-synapse system. (g) Top: the Moiré pattern in TBG. Bottom: three different stacking in TBG. (h) A simplified model for the stacking order in TBG. (i) Density of states. Left: a spin-singlet Mott-like insulator ground state. Right: the excitations can be polarized and charge conduction occurs when the Zeeman energy exceeds the charge gap.

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[1]	Novoselov K S, Geim A K, Morozov S V, et al. Electric field effect in atomically thin carbon films. Science, 2004, 306, 666 doi: 10.1126/science.1102896
[2]	Conti S, Pimpolari L, Calabrese G, et al. Low-voltage 2D materials-based printed field-effect transistors for integrated digital and analog electronics on paper. Nat Commun, 2020, 11, 3566 doi: 10.1038/s41467-020-17297-z
[3]	Dieny B, Prejbeanu I L, Garello K, et al. Opportunities and challenges for spintronics in the microelectronic industry. Nat Electron, 2020, 3, 446 doi: 10.1038/s41928-020-0461-5
[4]	Pi L, Hu C, Shen W, et al. Highly in-plane anisotropic 2D PdSe₂ for polarized photodetection with orientation selectivity. Adv Funct Mater, 2021, 31, 2006774 doi: 10.1002/adfm.202006774
[5]	Li G, Yin S, Tan C, et al. Fast Photothermoelectric response in CVD-grown PdSe₂ photodetectors with in-plane anisotropy. Adv Funct Mater, 2021, 31, 2104787 doi: 10.1002/adfm.202104787
[6]	Tian H, Guo Q, Xie Y, et al. Anisotropic black phosphorus synaptic device for neuromorphic applications. Adv Mater, 2016, 28, 4991 doi: 10.1002/adma.201600166
[7]	Du X, Tao L, Xu J, et al. Two-dimensional multibit optoelectronic memory with broadband spectrum distinction. Nat Commun, 2018, 9, 2966 doi: 10.1038/s41467-018-05397-w
[8]	Xiang D, Liu T, Wang J, et al. Anomalous broadband spectrum photodetection in 2D rhenium disulfide transistor. Adv Opt Mater, 2019, 7, 1901115 doi: 10.1002/adom.201901115
[9]	Qin J, Zhou F, Wang J, et al. Anisotropic signal processing with trigonal selenium nanosheet synaptic transistors. ACS Nano, 2020, 14, 10018 doi: 10.1021/acsnano.0c03124
[10]	Cao Y, Fatemi V, Demir A, et al. Correlated insulator behaviour at half-filling in magic angle graphene superlattices. Nature, 2018, 556, 80 doi: 10.1038/nature26154
[11]	Park J M, Cao Y, Watanabe K, et al. Tunable strongly coupled superconductivity in magic-angle twisted trilayer graphene. Nature, 2021, 590, 249 doi: 10.1038/s41586-021-03192-0
[12]	Cao Y, Rodan-Legrain D, Park J M, et al. Nematicity and competing orders in superconducting magic-angle graphene. Science, 2021, 372, 264 doi: 10.1126/science.abc2836