缪育博 , 张静媛 and 王圩
Abstract: 采用全息二次曝光的方法,研制出用于 1.55μm InGaAsP/InP DFB激光器的,具有 λ/4相移的二级光栅,并通过扫描电镜(SEM)证明了相移的存在.本文分析了制备该种光栅的工艺原理,并提出了改善此种光栅质量的新方法.
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Manuscript received: 19 August 2015 Manuscript revised: Online: Published: 01 May 1991
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