245 GHz subharmonic receiver with on-chip antenna for gas spectroscopy application

Yanfei Mao; Shiju E; Klaus Schmalz; J. Christoph Scheytt

doi:10.1088/1674-4926/39/12/125001

J. Semicond. > 2018, Volume 39 > Issue 12 > 125001, doi: 10.1088/1674-4926/39/12/125001

SEMICONDUCTOR INTEGRATED CIRCUITS

245 GHz subharmonic receiver with on-chip antenna for gas spectroscopy application

Yanfei Mao¹, Shiju E^1,, Klaus Schmalz² and J. Christoph Scheytt³

+ Author Affiliations

Corresponding author: E Shiju. Email: eshiju@163.com

Abstract: A 2nd transconductance subharmonic receiver for 245 GHz spectroscopy sensor applications has been proposed. The receiver consists of a 245 GHz on-chip folded dipole antenna, a CB (common base) LNA, a 2nd transconductance SHM (subharmonic mixer), and a 120 GHz push-push VCO with 1/64 divider. The receiver is fabricated in f_T/f_max = 300/500 GHz SiGe:C BiCMOS technology. The receiver dissipates a low power of 288 mW. Integrated with the on-chip antenna, the receiver is measured on-chip with a conversion gain of 15 dB, a bandwidth of 15 GHz, and the chip will be utilized in PCB board design for gas spectroscopy sensor application.

Key words: SiGe BiCMOS, CB LNA, 2nd transconductance subharmonic receiver, 245 GHz, on-chip antenna, gas spectroscopy

References

[1]	Öjefors E, Heinemann B, Pfeiffer U R. A 220 GHz subharmonic receiver front end in a SiGe HBT technology. IEEE RFIC, 2011: 1
[2]	Grzyb J, Statnikov K, Sarmah N, et al. A 210–270 GHz circularly polarized FMCW radar with a single-lens-coupled SiGe HBT chip. IEEE Trans Terahertz Sci Technol, 2016, 6(6): 771 doi: 10.1109/TTHZ.2016.2602539
[3]	Schmalz K, Borngräber J, Wang R, et al. Subharmonic 245 GHz SiGe receiver with antenna. European Microwave Integrated Circuit Conference, 2013: 121
[4]	Schmalz K, Wang R, Mao Y F, et al. 245 GHz SiGe sensor system for gas spectroscopy. 44th European Microwave Conference, 2014: 644
[5]	Schmalz K, Borngräber J, Yilmaz S B, et al. Gas spectroscopy with 245 GHz circuits in SiGe BiCMOS and Frac-N PLL for frequency ramps. IEEE SENSORS, 2016: 1
[6]	Schmalz K, Rothbart N, Neumaier P F X, et al. Gas spectroscopy system for breath analysis at mm-wave/THz using SiGe BiCMOS circuits. IEEE Trans Microwave Theory Tech, 2017, 65(5): 1807 doi: 10.1109/TMTT.2017.2650915
[7]	Vazquez P R, Grzyb J, Sarmah N, et al. A 219–266 GHz fully-integrated direct conversion IQ receiver module in a SiGe HBT technology. IEEE EuMA, 2017: 261
[8]	Sarmah N, Grzyb J, Statnikov K, et al. A fully integrated 240 GHz direct conversion quadrature transmitter and receiver chipset in SiGe technology. IEEE Trans Microwave Theory Tech, 2016, 64(2): 562 doi: 10.1109/TMTT.2015.2504930
[9]	Eissaa M H, Awny A, Ko M, et al. A 220–275 GHz direct conversion receiver in 130 nm SiGe:C BiCMOS technology. IEEE Microwave Compon Wireless Compon Lett, 2017, 27(7): 675 doi: 10.1109/LMWC.2017.2711559
[10]	Yang X, Yang H, Zhang H Y, et al. A monolithic 60 GHz balanced low noise amplifier. J Semicond, 2015, 36(4): 045003 doi: 10.1088/1674-4926/36/4/045003
[11]	Zhong Y H, Zhang Y M, Zhang Y M, et al. A W-band two-stage cascade amplifier with gain of 25.7 dB. J Semicond, 2013, 34(12): 125003 doi: 10.1088/1674-4926/34/12/125003
[12]	Yao C F, Zhou M, Luo Y S, et al. W-band high output power schottky diode doublers with quartz substrate. J Semicond, 2013, 34(12): 125004 doi: 10.1088/1674-4926/34/12/125004
[13]	Wang C, Li Z Q, Li Q, et al. A broadband 47–67 GHz LNA with 17.3 dB gain in 65-nm CMOS. J Semicond, 2015, 36(10): 105010 doi: 10.1088/1674-4926/36/10/105010
[14]	Mao Y F, Schmalz K, Borngräber J, et al. 245 GHz subharmonic receiver in SiGe. IEEE MTT-S International Microwave Symposium Digest (MTT), 2013: 1
[15]	Schmalz K, Mao Y, Borngräber J, et al. Tunable 245 GHz transmitter and receiver in SiGe technology for gas spectroscopy. IEEE Electron Lett, 2014, 50(12): 881 doi: 10.1049/el.2014.0625
[16]	Schmalz K, Borngräber J, Debski W, et al. 245-GHz transmitter array in SiGe BiCMOS for gas spectroscopy. IEEE Trans Terahertz Sci Technol, 2016, 6(2): 318 doi: 10.1109/TTHZ.2015.2513278
[17]	Mao Y, Schmalz K, Borngräber J, et al. 245-GHz LNA, mixer, and subharmonic receiver in SiGe technology. IEEE Trans Microwave Theory Tech, 2012, 60(12): 3823 doi: 10.1109/TMTT.2012.2209447
[18]	Schmalz K, Ruoyu W, Borngräber J, et al. 245 GHz SiGe transmitter with integrated antenna and external PLL. IEEE IMS, 2013: 1
[19]	Rücker H, Heinemann B, Fox A. Half-terahertz SiGe BiCMOS Technology. IEEE SiRF, 2012: 133

Fig. 1. Topology of the subharmonic receiver with on-chip antenna.

DownLoad: Full-Size Img PowerPoint

Fig. 3. (Color online) Chip photo of the 2nd transconductance subharmonic receiver with on-chip antenna.

DownLoad: Full-Size Img PowerPoint

Fig. 4. S₂₁ of CB LNA.

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Fig. 5. Output power of the LO signal versus LO frequency.

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Fig. 2. Schematics of (a) one stage of the 4 stage 245 GHz CB LNA, (b) 2nd transconductance SHM, and (c) 120 GHz VCO.

DownLoad: Full-Size Img PowerPoint

Fig. 6. (Color online) Conversion gain of the LNA-SHM chain versus RF frequency.

DownLoad: Full-Size Img PowerPoint

Fig. 7. (Color online) The comparison between measured and simulated gain of the on-chip antenna.

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Fig. 8. (Color online) A photo of the on-chip measurement of subharmonic receivers with antenna.

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Fig. 9. Details upon setup of the on-chip measurement of subharmonic receivers with antenna.

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Fig. 10. Calculated conversion gain of receiver integrated with on-chip antenna.

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Table 1. Performance of the receiver.

Parameter	Value
CB LNA	25 mA at 2 V
SHM	17 mA at 3 V
VCO	32 mA at 3.3 V
Divider	29.5 at 3 V
Total power dissipation	288 mW
Antenna gain^[18]	7 dBi at 245 GHz
NF^[14]	17 dB
Input referred 1 dB compression point^[14]	−24 dBm
Conversion gain	15 dB at 245 GHz
RF bandwidth	15 GHz

DownLoad: CSV

Table 2. Comparison with state-of-the-art.

Parameter	RF (GHz)	f_t/f_max (GHz)	Integration level	Conv. gain (dB)	Power dissipation (mW)	Input 1 dB CP (dBm)	NF (dB)	Bandwidth (GHz)
Ref. [1]	220	280/435	LNA, mixer	16	216	–	18	25
Refs. [3, 4]	245	300/500^[19]	LNA, SHM, 120 GHz VCO, divider, LO-Buffer, on-chip antenna	18	712.3	−25	18	–
Ref. [7]	240	350/550	Balun, ×16 multiplier chain, mixer, PA, quadrature coupler, buffer, on-chip antenna	7.8	915.8	–	11.3	47
Ref. [8]	240	350/550	Balun, ×16 multiplier chain, mixer, PA,LNA, on-chip antenna	10.5	986	−18	15	17
Ref. [9]	240	300/500	TIA, LO multiplier (with external LO)	13	500	–	18	55
This work	245	300/500	CB LNA, 120 GHz VCO, divider, 2nd transconductance SHM, on-chip antenna	15	288/107 (with/without VCO and divider)	−24	17	15

DownLoad: CSV

[1]	Öjefors E, Heinemann B, Pfeiffer U R. A 220 GHz subharmonic receiver front end in a SiGe HBT technology. IEEE RFIC, 2011: 1
[2]	Grzyb J, Statnikov K, Sarmah N, et al. A 210–270 GHz circularly polarized FMCW radar with a single-lens-coupled SiGe HBT chip. IEEE Trans Terahertz Sci Technol, 2016, 6(6): 771 doi: 10.1109/TTHZ.2016.2602539
[3]	Schmalz K, Borngräber J, Wang R, et al. Subharmonic 245 GHz SiGe receiver with antenna. European Microwave Integrated Circuit Conference, 2013: 121
[4]	Schmalz K, Wang R, Mao Y F, et al. 245 GHz SiGe sensor system for gas spectroscopy. 44th European Microwave Conference, 2014: 644
[5]	Schmalz K, Borngräber J, Yilmaz S B, et al. Gas spectroscopy with 245 GHz circuits in SiGe BiCMOS and Frac-N PLL for frequency ramps. IEEE SENSORS, 2016: 1
[6]	Schmalz K, Rothbart N, Neumaier P F X, et al. Gas spectroscopy system for breath analysis at mm-wave/THz using SiGe BiCMOS circuits. IEEE Trans Microwave Theory Tech, 2017, 65(5): 1807 doi: 10.1109/TMTT.2017.2650915
[7]	Vazquez P R, Grzyb J, Sarmah N, et al. A 219–266 GHz fully-integrated direct conversion IQ receiver module in a SiGe HBT technology. IEEE EuMA, 2017: 261
[8]	Sarmah N, Grzyb J, Statnikov K, et al. A fully integrated 240 GHz direct conversion quadrature transmitter and receiver chipset in SiGe technology. IEEE Trans Microwave Theory Tech, 2016, 64(2): 562 doi: 10.1109/TMTT.2015.2504930
[9]	Eissaa M H, Awny A, Ko M, et al. A 220–275 GHz direct conversion receiver in 130 nm SiGe:C BiCMOS technology. IEEE Microwave Compon Wireless Compon Lett, 2017, 27(7): 675 doi: 10.1109/LMWC.2017.2711559
[10]	Yang X, Yang H, Zhang H Y, et al. A monolithic 60 GHz balanced low noise amplifier. J Semicond, 2015, 36(4): 045003 doi: 10.1088/1674-4926/36/4/045003
[11]	Zhong Y H, Zhang Y M, Zhang Y M, et al. A W-band two-stage cascade amplifier with gain of 25.7 dB. J Semicond, 2013, 34(12): 125003 doi: 10.1088/1674-4926/34/12/125003
[12]	Yao C F, Zhou M, Luo Y S, et al. W-band high output power schottky diode doublers with quartz substrate. J Semicond, 2013, 34(12): 125004 doi: 10.1088/1674-4926/34/12/125004
[13]	Wang C, Li Z Q, Li Q, et al. A broadband 47–67 GHz LNA with 17.3 dB gain in 65-nm CMOS. J Semicond, 2015, 36(10): 105010 doi: 10.1088/1674-4926/36/10/105010
[14]	Mao Y F, Schmalz K, Borngräber J, et al. 245 GHz subharmonic receiver in SiGe. IEEE MTT-S International Microwave Symposium Digest (MTT), 2013: 1
[15]	Schmalz K, Mao Y, Borngräber J, et al. Tunable 245 GHz transmitter and receiver in SiGe technology for gas spectroscopy. IEEE Electron Lett, 2014, 50(12): 881 doi: 10.1049/el.2014.0625
[16]	Schmalz K, Borngräber J, Debski W, et al. 245-GHz transmitter array in SiGe BiCMOS for gas spectroscopy. IEEE Trans Terahertz Sci Technol, 2016, 6(2): 318 doi: 10.1109/TTHZ.2015.2513278
[17]	Mao Y, Schmalz K, Borngräber J, et al. 245-GHz LNA, mixer, and subharmonic receiver in SiGe technology. IEEE Trans Microwave Theory Tech, 2012, 60(12): 3823 doi: 10.1109/TMTT.2012.2209447
[18]	Schmalz K, Ruoyu W, Borngräber J, et al. 245 GHz SiGe transmitter with integrated antenna and external PLL. IEEE IMS, 2013: 1
[19]	Rücker H, Heinemann B, Fox A. Half-terahertz SiGe BiCMOS Technology. IEEE SiRF, 2012: 133

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Received: 25 September 2017 Revised: 27 December 2017 Online: Uncorrected proof: 19 July 2018Corrected proof: 01 November 2018Published: 13 December 2018

Article Navigation > Journal of Semiconductors > 2018 > 39(12): 125001

Yanfei Mao, Shiju E, Klaus Schmalz, J. Christoph Scheytt. 245 GHz subharmonic receiver with on-chip antenna for gas spectroscopy application[J]. Journal of Semiconductors, 2018, 39(12): 125001. doi: 10.1088/1674-4926/39/12/125001 Y F Mao, S J E, K Schmalz, J C Scheytt, 245 GHz subharmonic receiver with on-chip antenna for gas spectroscopy application[J]. J. Semicond., 2018, 39(12): 125001. doi: 10.1088/1674-4926/39/12/125001.Export: BibTex EndNote

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Yanfei Mao, Shiju E, Klaus Schmalz, J. Christoph Scheytt. 245 GHz subharmonic receiver with on-chip antenna for gas spectroscopy application[J]. Journal of Semiconductors, 2018, 39(12): 125001. doi: 10.1088/1674-4926/39/12/125001

Y F Mao, S J E, K Schmalz, J C Scheytt, 245 GHz subharmonic receiver with on-chip antenna for gas spectroscopy application[J]. J. Semicond., 2018, 39(12): 125001. doi: 10.1088/1674-4926/39/12/125001.

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245 GHz subharmonic receiver with on-chip antenna for gas spectroscopy application

doi: 10.1088/1674-4926/39/12/125001

1.
Engineering College, Zhejiang Normal University, Jinhua 321000, China
2.
IHP, Microelectronics, Frankfurt Oder, 15236, Germany
3.
Heinz Nixdorf Institute, Paderborn University, 33102, Germany

Funds:

Project supported by the Zhejiang National Natural Science Foundation of China (No. LQ17F040001) and the Key Laboratory Open Project Fund of Southeast University, China (No. K201817).

More Information

Corresponding author: E Shiju. Email: eshiju@163.com
Received Date: 2017-09-25
Revised Date: 2017-12-27
Published Date: 2018-12-01

Abstract

Abstract

A 2nd transconductance subharmonic receiver for 245 GHz spectroscopy sensor applications has been proposed. The receiver consists of a 245 GHz on-chip folded dipole antenna, a CB (common base) LNA, a 2nd transconductance SHM (subharmonic mixer), and a 120 GHz push-push VCO with 1/64 divider. The receiver is fabricated in f_T/f_max = 300/500 GHz SiGe:C BiCMOS technology. The receiver dissipates a low power of 288 mW. Integrated with the on-chip antenna, the receiver is measured on-chip with a conversion gain of 15 dB, a bandwidth of 15 GHz, and the chip will be utilized in PCB board design for gas spectroscopy sensor application.
- SiGe BiCMOS,
- CB LNA,
- 2nd transconductance subharmonic receiver,
- 245 GHz,
- on-chip antenna,
- gas spectroscopy

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References(19)

References

[1]	Öjefors E, Heinemann B, Pfeiffer U R. A 220 GHz subharmonic receiver front end in a SiGe HBT technology. IEEE RFIC, 2011: 1
[2]	Grzyb J, Statnikov K, Sarmah N, et al. A 210–270 GHz circularly polarized FMCW radar with a single-lens-coupled SiGe HBT chip. IEEE Trans Terahertz Sci Technol, 2016, 6(6): 771 doi: 10.1109/TTHZ.2016.2602539
[3]	Schmalz K, Borngräber J, Wang R, et al. Subharmonic 245 GHz SiGe receiver with antenna. European Microwave Integrated Circuit Conference, 2013: 121
[4]	Schmalz K, Wang R, Mao Y F, et al. 245 GHz SiGe sensor system for gas spectroscopy. 44th European Microwave Conference, 2014: 644
[5]	Schmalz K, Borngräber J, Yilmaz S B, et al. Gas spectroscopy with 245 GHz circuits in SiGe BiCMOS and Frac-N PLL for frequency ramps. IEEE SENSORS, 2016: 1
[6]	Schmalz K, Rothbart N, Neumaier P F X, et al. Gas spectroscopy system for breath analysis at mm-wave/THz using SiGe BiCMOS circuits. IEEE Trans Microwave Theory Tech, 2017, 65(5): 1807 doi: 10.1109/TMTT.2017.2650915
[7]	Vazquez P R, Grzyb J, Sarmah N, et al. A 219–266 GHz fully-integrated direct conversion IQ receiver module in a SiGe HBT technology. IEEE EuMA, 2017: 261
[8]	Sarmah N, Grzyb J, Statnikov K, et al. A fully integrated 240 GHz direct conversion quadrature transmitter and receiver chipset in SiGe technology. IEEE Trans Microwave Theory Tech, 2016, 64(2): 562 doi: 10.1109/TMTT.2015.2504930
[9]	Eissaa M H, Awny A, Ko M, et al. A 220–275 GHz direct conversion receiver in 130 nm SiGe:C BiCMOS technology. IEEE Microwave Compon Wireless Compon Lett, 2017, 27(7): 675 doi: 10.1109/LMWC.2017.2711559
[10]	Yang X, Yang H, Zhang H Y, et al. A monolithic 60 GHz balanced low noise amplifier. J Semicond, 2015, 36(4): 045003 doi: 10.1088/1674-4926/36/4/045003
[11]	Zhong Y H, Zhang Y M, Zhang Y M, et al. A W-band two-stage cascade amplifier with gain of 25.7 dB. J Semicond, 2013, 34(12): 125003 doi: 10.1088/1674-4926/34/12/125003
[12]	Yao C F, Zhou M, Luo Y S, et al. W-band high output power schottky diode doublers with quartz substrate. J Semicond, 2013, 34(12): 125004 doi: 10.1088/1674-4926/34/12/125004
[13]	Wang C, Li Z Q, Li Q, et al. A broadband 47–67 GHz LNA with 17.3 dB gain in 65-nm CMOS. J Semicond, 2015, 36(10): 105010 doi: 10.1088/1674-4926/36/10/105010
[14]	Mao Y F, Schmalz K, Borngräber J, et al. 245 GHz subharmonic receiver in SiGe. IEEE MTT-S International Microwave Symposium Digest (MTT), 2013: 1
[15]	Schmalz K, Mao Y, Borngräber J, et al. Tunable 245 GHz transmitter and receiver in SiGe technology for gas spectroscopy. IEEE Electron Lett, 2014, 50(12): 881 doi: 10.1049/el.2014.0625
[16]	Schmalz K, Borngräber J, Debski W, et al. 245-GHz transmitter array in SiGe BiCMOS for gas spectroscopy. IEEE Trans Terahertz Sci Technol, 2016, 6(2): 318 doi: 10.1109/TTHZ.2015.2513278
[17]	Mao Y, Schmalz K, Borngräber J, et al. 245-GHz LNA, mixer, and subharmonic receiver in SiGe technology. IEEE Trans Microwave Theory Tech, 2012, 60(12): 3823 doi: 10.1109/TMTT.2012.2209447
[18]	Schmalz K, Ruoyu W, Borngräber J, et al. 245 GHz SiGe transmitter with integrated antenna and external PLL. IEEE IMS, 2013: 1
[19]	Rücker H, Heinemann B, Fox A. Half-terahertz SiGe BiCMOS Technology. IEEE SiRF, 2012: 133

245 GHz subharmonic receiver with on-chip antenna for gas spectroscopy application

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