J. Semicond. > Volume 37 > Issue 5 > Article Number: 054005

Series resistance effect on time zero dielectrics breakdown characteristics of MOSCAP with ultra-thin EOT high-k/metal gate stacks

Hao Xu , Hong Yang , Yanrong Wang , Wenwu Wang , , Guangxing Wan , Shangqing Ren , Weichun Luo , Luwei Qi , Chao Zhao , Dapeng Chen , Xinyu Liu and Tianchun Ye

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Abstract: The time zero dielectric breakdown characteristics of MOSCAP with ultra-thin EOT high-k metal gate stacks are studied. The TZDB results show an abnormal area dependence due to the series resistance effect. The series resistance components extracted from the Fowler-Nordheim tunneling relation are attributed to the spreading resistance due to the asymmetry electrodes. Based on a series model to eliminate the series resistance effect, an area acceleration dependence is obtained by correcting the TZDB results. The area dependence follows Poisson area scaling rules, which indicates that the mechanism of TZDB is the same as TDDB and could be considered as a trap generation process.

Key words: high-k/metal gate stacksultra-thin EOTTZDBseries resistance effect

Abstract: The time zero dielectric breakdown characteristics of MOSCAP with ultra-thin EOT high-k metal gate stacks are studied. The TZDB results show an abnormal area dependence due to the series resistance effect. The series resistance components extracted from the Fowler-Nordheim tunneling relation are attributed to the spreading resistance due to the asymmetry electrodes. Based on a series model to eliminate the series resistance effect, an area acceleration dependence is obtained by correcting the TZDB results. The area dependence follows Poisson area scaling rules, which indicates that the mechanism of TZDB is the same as TDDB and could be considered as a trap generation process.

Key words: high-k/metal gate stacksultra-thin EOTTZDBseries resistance effect



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[1]

Prasad C, Agostinelli M, Auth C. Dielectric breakdown in a 45 nm high-k/metal gate process technology[J]. IEEE International Reliability Physics Symposium, 2008: 667.

[2]

Sangwoo P, Ashok A, Jingyoo C. Reliability characterization of 32 nm high-k and metal-gate logic transistor technology[J]. IEEE International, Reliability Physics Symposium (IRPS), 2010: 287.

[3]

Ramey S, Ashutosh A, Auth C. Intrinsic transistor reliability improvements from 22 nm tri-gate technology[J]. IEEE International Reliability Physics Symposium (IRPS), 2013: 4C.

[4]

Han Kai, Ma Xueli, Xiang Jinjuan. Effect of low temperature annealing on the electrical properties of an MOS capacitor with a HfO2 dielectric and a TiN metal gate[J]. Journal of Semiconductors, 2013, 34: 114007.

[5]

Ma Xueli, Han Kai, Wang Wenwu. Remote scavenging technology using a Ti/TiN capping layer interposed in a metal/high-k gate stack[J]. Journal of Semiconductors, 2013, 34: 076001.

[6]

Ren Shangqing, Tang Bo, Xu Hao. Characterization of positive bias temperature instability of NMOSFET with high-k/metal gate last process[J]. Journal of Semiconductors, 2015, 36: 014007.

[7]

Luo W, Yang H, Wang W. Physical understanding of different drain-induced-barrier-lowering variations in high-k/metal gate n-channel metal-oxide-semiconductor field effect transistors induced by charge trapping under normal and reverse channel hot carrier stresses[J]. Appl Phys Lett, 2013, 103: 183502.

[8]

Kim Y H, Lee J C. Hf-based high-k dielectrics: process development, performance characterization, and reliability[J]. Synthesis Lectures on Solid State Materials and Devices, 2006, 1: 1.

[9]

Martin A, O'Sullivan P, Mathewson A. Dielectric reliability measurement methods: a review[J]. Microelectron Reliab, 1998, 38: 37.

[10]

Wu E Y, Sune J, Lai W. On the Weibull shape factor of intrinsic breakdown of dielectric films and its accurate experimental determination[J]. IEEE Trans Electron Devices, 2002, 49: 2141.

[11]

Wu E Y, Vollertsen R P. On the Weibull shape factor of intrinsic breakdown of dielectric films and its accurate experimental determination[J]. IEEE Trans Electron Devices, 2002, 49: 2131.

[12]

Perera R, Ikeda A, Hattori R. Trap assisted leakage current conduction in thin silicon oxynitride films grown by rapid thermal oxidation combined microwave excited plasma nitridation[J]. Microelectron Eng, 2003, 65: 357.

[13]

Yee Y C, Lu Q, Lee W C. Direct tunneling gate leakage current in transistors with ultrathin silicon nitride gate dielectric[J]. IEEE Electron Device Lett, 2000, 21: 540.

[14]

Yee Y C, King T J, Hu C. Direct tunneling leakage current and scalability of alternative gate dielectrics[J]. Appl Phys Lett, 2002, 81: 2091.

[15]

Miranda E, Palumbo F. Analytic expression for the Fowler-Nordheim V-I characteristic including the series resistance effect[J]. Solid-State Electron, 2011, 61: 93.

[16]

(1999) . QMCV Simulator[J]. .

[17]

Robin D, Ben K, Guido G. Reliability: a possible showstopper for oxide thickness scaling[J]. Semicond Sci Technol, 2000, 15: 436.

[18]

Wu E Y, Sune J. On voltage acceleration models of time to breakdown Part I experimental and analysis methodologies[J]. IEEE Trans Electron Devices, 2009, 56: 1433.

[19]

Wu E Y, Sune J. On voltage acceleration models of time to breakdown part II experimental results and voltage dependence of Weibull slope in the FN regime[J]. IEEE Trans Electron Devices, 2009, 56: 1442.

[20]

Prasad C, Bai P, Gannavaram S. Reliability studies on a 45 nm low power system-on-chip (SoC) dual gate oxide high-k/ metal gate (DG HK+MG) technology[J]. IEEE International Reliability Physics Symposium (IRPS), 2010: 293.

[21]

Pio F. Sheet resistance and layout effects in accelerated tests for dielectric reliability evaluation[J]. Microelectron J, 1996, 27: 675.

[22]

Hosoi T, Lo Re P, Kamakura Y. A new model of time evolution of gate leakage current after soft breakdown in ultra-thin gate oxides[J]. IEDM '02 International Electron Devices Meeting, 2002: 155.

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H Xu, H Yang, Y R Wang, W W Wang, G X Wan, S Q Ren, W C Luo, L W Qi, C Zhao, D P Chen, X Y Liu, T C Ye. Series resistance effect on time zero dielectrics breakdown characteristics of MOSCAP with ultra-thin EOT high-k/metal gate stacks[J]. J. Semicond., 2016, 37(5): 054005. doi: 10.1088/1674-4926/37/5/054005.

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Manuscript received: 26 August 2015 Manuscript revised: Online: Published: 01 May 2016

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