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High wall-plug efficiency 808-nm laser diodes with a power up to 30.1 W

Zhanqiang Ren, Qingmin Li, Bo Li and Kechang Song

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 Corresponding author: Zhanqiang Ren, renzq@lumcore.com; Qingmin Li, Email: liqm@lumcore.com

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Abstract: A very highly efficient InGaAlAs/AlGaAs quantum-well structure was designed for 808 nm emission, and laser diode chips 390-μm-wide aperture and 2-mm-long cavity length were fabricated. Special pretreatment and passivation for the chip facets were performed to achieve improved reliability performance. The laser chips were p-side-down mounted on the AlN sub-mount, and then tested at continuous wave (CW) operation with the heat-sink temperature setting to 25 °C using a thermoelectric cooler (TEC). As high as 60.5% of the wall-plug efficiency (WPE) was achieved at the injection current of 11 A. The maximum output power of 30.1 W was obtained at 29.5 A when the TEC temperature was set to 12 °C. Accelerated life-time test showed that the laser diodes had lifetimes of over 62 111 h operating at rated power of 10 W.

Key words: high power semiconductor lasershigh wall-plug efficiencyCOMD



[1]
Gao W, Cheng L, Luo K J. High power high reliable single emitter laser diodes at 808 nm. Proc SPIE, 2007, 6456, 64560B
[2]
Van de Casteele J, Bettiati M, Laruelle F, et al. High reliability level on single-mode 980 nm – 1060 nm diode lasers for telecommunication and industrial applications. Proc SPIE, 2008, 6876, 68760P doi: 10.1117/12.762943
[3]
Sin Y K, Presser N, Foran B, et al. Investigation of catastrophic degradation in high power muliti-mode InGaAs strained quantum well single emitters. Proc SPIE, 2008, 6870, 68760R
[4]
Ziegler M, Tomm J W, Zeimer U, et al. Imaging catastrophic optical mirror damage in high-power diode lasers. J Electron Mater, 2010, 39(6), 709 doi: 10.1007/s11664-010-1146-z
[5]
Bao L, Wang J, DeVito M, et al. Reliability of high performance 9xx-nm single emitter diode lasers. Proc SPIE, 2010, 7583, 758302 doi: 10.1117/12.842856
[6]
Gilly J, Friedmann P, Kissel H, et al. High power broad area lasers optimized for fiber laser pumping. Proc SPIE, 2012, 8241, 82410T doi: 10.1117/12.906701
[7]
Levy M, Rappaport N, Klumel G, et al. High-power single emitters for fiber laser pumping across 8xx nm – 9xx nm wavelength bands. Proc SPIE, 2012, 8241, 82410A
[8]
Sin Y K, LaLumondiere S, Foran B, et al. Catastrophic optical bulk damage (COBD) processes in aged and proton-irradiated high power InGaAs-AlGaAs strained quantum well lasers. Proc SPIE, 2013, 8605, 86050M doi: 10.1117/12.2001530
[9]
Lee S J, An H J, Ji T. Optimization of high and anti-reflective facet coating for near infrared high power laser diode. Adv Sci Technol Lett, 2016, 139, 418 doi: 10.14257/astl.2016.139.83
[10]
Leonhauser B, Kissel H, Unger A, et al. Feedback-induced catastrophic optical mirror damage (COMD) on 976 nm broad area single emitters with different AR reflectivity. Proc SPIE, 2014, 8965, 896506
[11]
Sin Y, Lingley Z, Brodie M, et al. Catastrophic optical bulk degradation (COBD) in high-power single- and multi-mode InGaAs–AlGaAs strained quantum well lasers. Proc SPIE, 2017, 10086, 100860S
[12]
Zhang Y, Ning Y Q, Zhang L S, et al. Design and comparison of GaAs, GaAsP and InGaAlAs quantum-well active regions for 808-nm VCSELs. Opt Express, 2011, 19(13), 12569 doi: 10.1364/OE.19.012569
Fig. 1.  (Color online) A typical PIV curves of the fabricated laser diodes.

Fig. 2.  The spectrum of the fabricated laser diodes.

Fig. 3.  (Color online) The far field divergence angles of the fabricated laser diodes.

Fig. 4.  The COMD measurement.

Fig. 5.  (Color online) Reliability test.

Table 1.   The device structure.

LayerMaterialx/y valueThickness (μm)Doping (cm–3)
10GaAs0.15p > 4.0 × 1019
9AlxGaAs0.05–0.530.05p = 3.0 × 1018
8AlxGaAs0.531.0p = 2.0 × 1018
7AlxGaAs0.350.4Undoped
6InxAlyGaAs0.11/0.090.0075Undoped
5AlxGaAs0.350.45Undoped
4AlxGaAs0.350.3n = 1.0 × 1017
3AlxGaAs0.531.0n = 5.0 × 1017
2AlxGaAs0.45–0.050.05n = 1.0 × 1018
2.0 × 1018
1GaAs buffer0.5n = 2.0 × 1018
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[1]
Gao W, Cheng L, Luo K J. High power high reliable single emitter laser diodes at 808 nm. Proc SPIE, 2007, 6456, 64560B
[2]
Van de Casteele J, Bettiati M, Laruelle F, et al. High reliability level on single-mode 980 nm – 1060 nm diode lasers for telecommunication and industrial applications. Proc SPIE, 2008, 6876, 68760P doi: 10.1117/12.762943
[3]
Sin Y K, Presser N, Foran B, et al. Investigation of catastrophic degradation in high power muliti-mode InGaAs strained quantum well single emitters. Proc SPIE, 2008, 6870, 68760R
[4]
Ziegler M, Tomm J W, Zeimer U, et al. Imaging catastrophic optical mirror damage in high-power diode lasers. J Electron Mater, 2010, 39(6), 709 doi: 10.1007/s11664-010-1146-z
[5]
Bao L, Wang J, DeVito M, et al. Reliability of high performance 9xx-nm single emitter diode lasers. Proc SPIE, 2010, 7583, 758302 doi: 10.1117/12.842856
[6]
Gilly J, Friedmann P, Kissel H, et al. High power broad area lasers optimized for fiber laser pumping. Proc SPIE, 2012, 8241, 82410T doi: 10.1117/12.906701
[7]
Levy M, Rappaport N, Klumel G, et al. High-power single emitters for fiber laser pumping across 8xx nm – 9xx nm wavelength bands. Proc SPIE, 2012, 8241, 82410A
[8]
Sin Y K, LaLumondiere S, Foran B, et al. Catastrophic optical bulk damage (COBD) processes in aged and proton-irradiated high power InGaAs-AlGaAs strained quantum well lasers. Proc SPIE, 2013, 8605, 86050M doi: 10.1117/12.2001530
[9]
Lee S J, An H J, Ji T. Optimization of high and anti-reflective facet coating for near infrared high power laser diode. Adv Sci Technol Lett, 2016, 139, 418 doi: 10.14257/astl.2016.139.83
[10]
Leonhauser B, Kissel H, Unger A, et al. Feedback-induced catastrophic optical mirror damage (COMD) on 976 nm broad area single emitters with different AR reflectivity. Proc SPIE, 2014, 8965, 896506
[11]
Sin Y, Lingley Z, Brodie M, et al. Catastrophic optical bulk degradation (COBD) in high-power single- and multi-mode InGaAs–AlGaAs strained quantum well lasers. Proc SPIE, 2017, 10086, 100860S
[12]
Zhang Y, Ning Y Q, Zhang L S, et al. Design and comparison of GaAs, GaAsP and InGaAlAs quantum-well active regions for 808-nm VCSELs. Opt Express, 2011, 19(13), 12569 doi: 10.1364/OE.19.012569
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    Received: 27 March 2019 Revised: 04 September 2019 Online: Accepted Manuscript: 18 December 2019Uncorrected proof: 23 December 2019Published: 01 March 2020

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      Zhanqiang Ren, Qingmin Li, Bo Li, Kechang Song. High wall-plug efficiency 808-nm laser diodes with a power up to 30.1 W[J]. Journal of Semiconductors, 2020, 41(3): 032901. doi: 10.1088/1674-4926/41/3/032901 Z Q Ren, Q M Li, B Li, K C Song, High wall-plug efficiency 808-nm laser diodes with a power up to 30.1 W[J]. J. Semicond., 2020, 41(3): 032901. doi: 10.1088/1674-4926/41/3/032901.Export: BibTex EndNote
      Citation:
      Zhanqiang Ren, Qingmin Li, Bo Li, Kechang Song. High wall-plug efficiency 808-nm laser diodes with a power up to 30.1 W[J]. Journal of Semiconductors, 2020, 41(3): 032901. doi: 10.1088/1674-4926/41/3/032901

      Z Q Ren, Q M Li, B Li, K C Song, High wall-plug efficiency 808-nm laser diodes with a power up to 30.1 W[J]. J. Semicond., 2020, 41(3): 032901. doi: 10.1088/1674-4926/41/3/032901.
      Export: BibTex EndNote

      High wall-plug efficiency 808-nm laser diodes with a power up to 30.1 W

      doi: 10.1088/1674-4926/41/3/032901
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