J. Semicond. > Volume 40 > Issue 6 > Article Number: 060401

Heteroepitaxy of semiconductor thin films

Yi Gu 1, 2, ,

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References:

[1]

Chung K, Lee C H, Yi G C. Transferable GaN layers grown on ZnO-coated graphene layers for optoelectronic devices. Science, 2010, 330, 655

[2]

Kim J, Bayram C, Park H, et al. Principle of direct van der Waals epitaxy of single-crystalline films on epitaxial graphene. Nat Commun, 2014, 5, 4836

[3]

Alaskar Y, Arafin S, Wickramaratne D, et al. Towards van der Waals epitaxial growth of GaAs on Si using a graphene buffer layer. Adv Funct Mater, 2014, 24, 6629

[4]

Kim Y, Cruz S, Lee K, et al. Remote epitaxy through graphene enables two-dimensional material-based layer transfer. Nature, 2017, 544, 340

[5]

Kong W, Li H, Qiao K, et al. Polarity governs atomic interaction through two-dimensional materials. Nat Mater, 2018, 17, 999

[1]

Chung K, Lee C H, Yi G C. Transferable GaN layers grown on ZnO-coated graphene layers for optoelectronic devices. Science, 2010, 330, 655

[2]

Kim J, Bayram C, Park H, et al. Principle of direct van der Waals epitaxy of single-crystalline films on epitaxial graphene. Nat Commun, 2014, 5, 4836

[3]

Alaskar Y, Arafin S, Wickramaratne D, et al. Towards van der Waals epitaxial growth of GaAs on Si using a graphene buffer layer. Adv Funct Mater, 2014, 24, 6629

[4]

Kim Y, Cruz S, Lee K, et al. Remote epitaxy through graphene enables two-dimensional material-based layer transfer. Nature, 2017, 544, 340

[5]

Kong W, Li H, Qiao K, et al. Polarity governs atomic interaction through two-dimensional materials. Nat Mater, 2018, 17, 999

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Y Gu, Heteroepitaxy of semiconductor thin films[J]. J. Semicond., 2019, 40(6): 060401. doi: 10.1088/1674-4926/40/6/060401.

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History

Manuscript received: Manuscript revised: Online: Accepted Manuscript: 29 May 2019 Uncorrected proof: 31 May 2019 Published: 05 June 2019

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