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Beyond the 100 Gbaud directly modulated laser for short reach applications

Jianou Huang1, Chao Li1, Rongguo Lu2, Lianyan Li3 and Zizheng Cao1,

+ Author Affiliations

 Corresponding author: Zizheng Cao, z.cao@tue.nl

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Abstract: It is very attractive to apply a directly modulated laser (DML)-based intensity-modulation and direct-detection (IM/DD) system in future data centers and 5G fronthaul networks due to the advantages of low cost, low system complexity, and high energy efficiency, which perfectly match the application scenarios of the data centers and 5G fronthaul networks, in which a large number of high-speed optical interconnections are needed. However, as the data traffic in the data centers and 5G fronthaul networks continues to grow exponentially, the future requirements for data rates beyond 100 Gbaud are challenging the existing DML-based IM/DD system, and the main bottleneck is the modulation bandwidth of the DML. In this paper, the data rate demands and technical standards of the data centers and 5G fronthaul networks are reviewed in detail. With the modulation bandwidth requirements, the technical routes and achievements of recent DMLs are reviewed and discussed. In this way, the prospects, challenges, and future development of DMLs in the applications of future data centers and 5G fronthaul networks are comprehensively explored.

Key words: directly modulated laserdata center5G fronthaul network



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Fig. 1.  (Color online) A typical fiber-optic communication network for the core, metro and access network scenarios, where the IM/DD links are addressed in the metroedge and intra-/inter-data center networks. CO: center office; RN: remote node; DCI: datacenter interconnects. © [2020] IEEE. Reprinted, with permission, from Ref. [4].

Fig. 2.  (Color online) A schematic diagram of the IM/DD system based on DML. DSP: digital signal processing; DAC: digital-to-analog convertor; LDD: laser diode driver; DML: directly modulated laser; SMF: single mode fiber; MMF: multi-mode fiber; ADC: analog-to-digital convertor.

Fig. 3.  Model used in the rate equation analysis of semiconductor lasers. Copyright © 2012 John Wiley & Sons, Inc. Reprinted, with permission, from Ref. [20].

Fig. 4.  (Color online) The sketch of the modulation transfer function for increasing values of relaxation resonance frequency $ f_{\rm{R}} $ (normalized to $ f_{\rm{d}} $). Including relationships between the peak frequency $ f_{\rm{p}} $, the resonance frequency $ f_{\rm{R}} $, and the 3-dB down cutoff frequency $ f_{\mathrm{dB}} $.

Fig. 5.  (Color online) Schematics of different types of coupled-cavity lasers. (a) Two-section DBR laser. © [1998] IEEE. Reprinted, with permission, from Ref. [41]. (b) Passive feedback laser. © (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Reprinted, with permission, from Ref. [35]. (c) DFB+R laser. Reprinted with permission from Ref. [17] © The Optical Society. (d) DR laser. © [2017] IEEE. Reprinted, with permission, from Ref. [38]. HR: high-reflection coating, 3%: 3%-reflection coating, AR: anti-reflection coating.

Fig. 6.  (Color online) (a) Example of the detuned loading and PPR in a two-section DBR laser: round trip gain (blue curve) and phase (red dashed curve) function at the DBR threshold. The squared red marker represents the lasing mode; the blue markers indicate nonlasing cavity modes. The green asterisks on the reflectivity curve represent the modes locations in the maximum detuned loading condition. © [2013] IEEE. Reprinted, with permission, from Ref. [42]. (b) Example of the detuned loading in a DFB+R laser: in-cavity etalon profile for DFB+R with 3% coating (red), passive feedback laser (PFL) with HR coating (black), and the stopband of the DFB section (blue). Reprinted with the permission from the authors of Ref. [40].

Fig. 7.  (Color online) (a) Measured lasing spectrum at 27 mA with using PPR. (b) Measured small-signal responses of the laser at various bias currents, with using PPR. (c) Measured lasing spectrum at 27 mA without using PPR. (d) Measured small-signal responses of the laser at various bias currents, without using PPR. The laser has a 50-μm-long active section, and the response of –3 dB is marked by a dashed horizontal grey line. Reprinted by permission from Springer Nature, Nature Photonics[16], 2021.

Table 1.   High-speed optical interface standards.

Standard Reach (m) Modulation scheme Baud rate (Gbaud)
400G BASE-SR16 100 NRZ 26.6
400G BASE-DR4 500 PAM4 53.1
400G BASE-FR8 2000 PAM4 26.6
400G BASE-LR8 10000 PAM4 26.6
200G BASE-SR4 100 PAM4 26.6
200G BASE-DR4 500 PAM4 26.6
200G BASE-FR4 2000 PAM4 26.6
200G BASE-LR4 10000 PAM4 26.6
100G BASE-SR10 70/100 NRZ 10.3
100G BASE-SR2 400 PAM4 26.6
100G BASE-DR 500 PAM4 53.1
100G BASE-SR4 70/100 NRZ 25.8
100G SWDM 400 NRZ 25.8
100G PSM4 500 NRZ 25.8
100G BASE-LR4 10000 NRZ 25.8
100G BASE-ER4 40000 NRZ 25.8
50G BASE-SR 100 PAM4 26.6
50G BASE-FR 2000 PAM4 26.6
50G BASE-LR 10000 PAM4 26.6
DownLoad: CSV

Table 2.   Optical modules for 5G fronthaul.

Data rate (Gb/s) Reach (km) Scheme Package
25 0.3 Duplex SFP28
25 10 Duplex SFP28
25 10 Bidi SFP28
25 15/20 Bidi SFP28
25 10 CWDM SFP28
25 10 MWDM SFP28
25 10/20 LWDM SFP28
25 10 DWDM SFP28
100 10 4WDM QSFP28
100 10 Bidi QSFP28/CFP28
DownLoad: CSV

Table 3.   The meaning of the symbols in the rate equations.

Symbol Meaning
$V$ Active-region volume
$V_{\rm p}$ Mode volume
$\varGamma$ Confinement factor
$R_{\rm{sp}}$ Spontaneous recombination rate
$R_{\rm{nr}}$ Nonradiative recombination rate
$R_{\rm 12}$ Stimulated absorption rate
$R_{\rm 21}$ Stimulated emission rate
$\beta_{\rm{sp}}$ Spontaneous emission factor
$\eta_{\rm i}$ Injection or internal efficiency of the laser
$\eta_{\rm 0}$ Optical efficiency of the laser
$I$ Injection current
$q$ Elementary charge
$N$ Carrier density
$N_{\rm p}$ Photon density
$P_{\rm 0}$ Useful output power
$P_{\rm{sp}}$ Spontaneously generated optical power
$\tau_{\rm p}$ Photon lifetime
$v_{\rm g}$ Group velocity of the mode
$g$ Material gain
DownLoad: CSV

Table 4.   Reported stare-of-the-art works of DMLs.

No. Year Structural characteristics Modulation bandwidth Citation
1 1993 GaAs-based MQW laser, increased strain, p-doping and number of QWs, 200-μm short cavity 30 GHz @ 114 mA [21]
2 1994 GaAs-based MQW laser, low cladding layer growth temperature, 100-μm short cavity 33 GHz @ 65 mA [22]
3 1995 GaAs-based MQW laser, carbon doped active region, 130-μm short cavity 37 GHz @ 160 mA [23]
4 1996 GaAs-based MQW laser, asymetric cladding layer growth temperature, modified doping sequence, 130-μm short cavityx 40 GHz @ 155 mA [24]
5 1997 1.55-μm InGaAlAs-InGaAsP MQW laser with strain compensation, 120-μm short cavity 30 GHz @ 100 mA [25]
6 2009 1.3-μm InGaAlAs MQW semi-insulating buried-heterostructure DFB laser, 150-μm short cavity fR = 20.5 GHz @
~60 mA
[27]
7 2011 Uncooled 1.3-μm InGaAlAs MQW ridge waveguide DFB laser, 160-μm short cavity 14 GHz @ 95 °C 60 mA [28]
8 2011 1.3-μm InGaAlAs MQW semi-insulating buried-heterostructure DR laser,
100-μm short cavity
fR = 25 GHz @ 40 mA [29]
9 2012 1.3-μm InGaAlAs MQW ridge waveguide DFB laser with passive waveguide, 150-μm short cavity 30 GHz @ 45 mA [14]
10 2013 1.3-μm InGaAlAs-based MQW ridge waveguide DFB laser, 150-μm short cavity 34 GHz @ 60 mA [30]
11 2015 1.3-μm InGaAlAs MQW semi-insulating buried-heterostructure DR laser array, 125-μm short cavity 30 GHz @ 80 mA [31]
12 1997 1.55-μm two-section InGaAsP MQW DBR-laser, with detuned loading effect 30 GHz @ 130 mA [32]
13 2005 Three-section InGaAsP DBR laser, with detuned loading effect and PPR effect 37 GHz @ 172 mA [33]
14 2007 1.55-μm InGaAsP MQW passive-feedback DFB laser, with PPR effect 29 GHz @ 40 mA [34]
15 2011 1.3/1.5-μm InGaAsP MQW passive-feedback DFB laser, with PPR effect 37 GHz @ 70 mA [35]
16 2011 1.55-μm InGaAsP MQW passive-feedback DFB laser, with PPR effect 34 GHz @ 60 mA [36]
17 2016 1.55-μm InGaAlAs MQW optically controlled external cavity laser, with PPR effect 59 GHz [37]
18 2017 1.3-μm InGaAlAs MQW short-cavity DR laser, with detuned loading effect and PPR effect 55 GHz @ 36.2 mA [38]
19 2018 1.3-μm InGaAlAs MQW short-cavity active DR laser, with detuned loading effect 24 GHz @ 60 mA [39]
20 2020 1.3-μm InGaAlAs MQW lateral-current-injection membrane DR laser on SIC substrate, with detuned DBR and PPR effect 108 GHz @ 27 mA [16]
21 2020 1.3-μm DFB+R laser, with detuned loading effect and PPR effect 65 GHz [17]
22 2020 1.3-μm DFB+R laser, with detuned loading effect and PPR effect 75 GHz @ 65 mA [40]
DownLoad: CSV

Table 5.   Reported state-of-the-art works with beyond 200 Gb/s per channel IM/DD transmissions.

Year Modulation device Line rate (Gb/s) Modulation format Link Band (nm) FEC threshold DSP
2016[50, 51]* 59-GHz LE-TWEAM-DFB 214 PAM-4 10-km SMF 1305 3.8 × 10–3 FFE
2016[52, 53] 55-GHz EAMDFB 300 DMT 10-km SMF 1305 2.7 × 10–2 AMUX
2017[54] 40-GHz DFB+MZM 200 PAM-4 0.5-km SSMF 1545 3.8 × 10–3 MLSD
2017[55] 100-GHz DFB-TWEAM 200 PAM-4 0.4-km SMF 1550 2 × 102 DFE
2017[56] 100-GHz DFB-TWEAM 209/200 DMT 0.8-km SMF/
1.6-km SMF
1550 2.7 × 10–2 TD-NE
2018[57] 54-GHz DFB+MZM 200/300 PAM-4/PAM-8 1.2-km SMF 1550 3.8 × 10–3/
2.7 × 10–2
FDE
2018[58] 100-GHz DFB-TWEAM 204 OOK 10-km SMF+DCF 1550 3.8 × 10–3 FFE, MAP
2018[59] 30-GHz CW+MZM 224 DMT 1-km SMF C-band 3.8 × 10–3 NLE
2018[60] 32-GHz CW+MZM 225 DB PAM-6 btb C-band 3.8 × 10–3 NFFE, NC, MLSE
2018[61] 100-GHz DFB-TWEAM 200 DMT 1.6-km SSMF 1550 2.7 × 10–2 TD-NE
2019[62] 100-GHz DFB-TWEAM 330 DMT-128QAM 0.4-km SMF C-band 2.7 × 10–2 Lattice pilot algorithm for CE
2019[63] 100-GHz DFB-TWEAM 204 OOK 10-km SMF 1550 3.8 × 10–3 LFFE
2019[64] 40-GHz CW+MZM 200 PAM-4 40-km SMF 1550 3.8 × 10–3 Volterra
2019[65] 65-GHz ECL+CC-SOH MZM 200 PAM-4 btb 1550 2.7 × 10–2
2019[66] 22.5-GHz ECL+TW-MZM 200 PAM-6 btb 1547 2.7 × 10–2 PF, MLSD
2019[67] 30-GHz CW+MZM 240 3D DB PAM-8 btb 1551 3.8 × 10–3 3D mapping, Volterra
2019[68] 40-GHz EML 260 PS-PAM-8 1-km NZDSF 1538 2.7 × 10–2 Pre-EQ clipping
2019[69] 30-GHz CW+DDMZM 255 PAM-8 btb 1309 3.8 × 10–3 NL-MLSE
2019[70] 40-GHz EML 204.75 PAM-8 1-km SMF 1538 2.7 × 10–2 FFE, LUT, ANF
2020[4] 100-GHz DFB+TWEAM 200 PAM-4 0.4-km SMF 1550 2.7 × 10–2 FFE, DFE
2020[71] 100-GHz DML 321 DMT 2-km SMF 1295 2.7 × 10–2 Linear Wiener filter, Volterra
2020[17] 65-GHz DML 411/368 DMT 0/15-km SSMF 1313 2.7 × 10–2 LMS
* The first 200 Gb/s IM/DD transmission with a single-polarization single-wavelength.
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    Received: 15 November 2020 Revised: 16 December 2020 Online: Accepted Manuscript: 27 January 2021Uncorrected proof: 03 February 2021Published: 12 April 2021

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      Jianou Huang, Chao Li, Rongguo Lu, Lianyan Li, Zizheng Cao. Beyond the 100 Gbaud directly modulated laser for short reach applications[J]. Journal of Semiconductors, 2021, 42(4): 041306. doi: 10.1088/1674-4926/42/4/041306 J O Huang, C Li, R G Lu, L Y Li, Z Z Cao, Beyond the 100 Gbaud directly modulated laser for short reach applications[J]. J. Semicond., 2021, 42(4): 041306. doi: 10.1088/1674-4926/42/4/041306.Export: BibTex EndNote
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      Jianou Huang, Chao Li, Rongguo Lu, Lianyan Li, Zizheng Cao. Beyond the 100 Gbaud directly modulated laser for short reach applications[J]. Journal of Semiconductors, 2021, 42(4): 041306. doi: 10.1088/1674-4926/42/4/041306

      J O Huang, C Li, R G Lu, L Y Li, Z Z Cao, Beyond the 100 Gbaud directly modulated laser for short reach applications[J]. J. Semicond., 2021, 42(4): 041306. doi: 10.1088/1674-4926/42/4/041306.
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      Beyond the 100 Gbaud directly modulated laser for short reach applications

      doi: 10.1088/1674-4926/42/4/041306
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      • Author Bio:

        Jianou Huang received his BSc (2014) in communication engineering from Beijing University of Posts and Telecommunications (BUPT), Beijing, China, and his Master (2017) of information and communication engineering from BUPT. From 2017 to now, he is a doctoral candidate in the field of beam-steered optoelectronic system and semiconductor laser in the Electro-Optical Communications (ECO) Group of Department of Electrical Engineering, Eindhoven University of Technology, the Netherlands

        Chao Li received the Ph.D. degree from Huazhong University of Science and Technology in 2015, Wuhan, China, focusing on ultra-high capacity fiber-optic communications. From 2015 to 2020, he was a postdoctoral at University of Science and Technology of China and Eindhoven University of Technology. He is currently an associate professor at Anhui University. His research interests include fiber and wireless optical communications

        Rongguo Lu received the M.Sc. and Ph.D. degrees in optical engineering in 2006 and 2009, respectively, both from University of Electronic Science and Technology of China, where he is currently an Associate Professor. During February 2013 to February 2014, he as a Visiting Scholar, joined the COBRA Research Institute, Eindhoven University of Technology (TU/e). His current research interests include integrated optics, optical communication, and microwave photonics

        Lianyan Li received the Ph.D. degree from Nanjing University in 2015, Nanjing, China, focusing on tunable semiconductor laser arrays and the integration with silicon phonics. She is currently a lecturer at Nanjing University of Post and Telecommunications. Her research interests include high performance optical transmitters, optical switching devices and integrated microwave photonics

        Zizheng Cao received his Ph.D. degree with highest honors from Eindhoven University of Technology (TU/e) where he is currently a tenured Assistant Professor. He mainly works at two areas: 1) new mechanisms, devices, algorithms and architectures to enable lightwave/millimeter wave various kinds of beam steering systems, including scenarios of line-of-sight (LoS), non-line-of-sight (NLoS) and complex wavefront; 2) applications of beam steering systems to indoor communication (e.g. optical wireless communication, OWC), metrology (e.g. LiDAR) and healthcare (e.g. blood sensing)

      • Corresponding author: z.cao@tue.nl
      • Received Date: 2020-11-15
      • Revised Date: 2020-12-16
      • Published Date: 2021-04-10

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