Special issues are a collection of timely, high-quality invited articles on a particular topic which are published together in a single issue of the journal.
We began to organize Special Issue from April 2016, and now we are delighted to present two special issues for 2017 and a few more are in planning.
Our latest special issue:
Perovskite Solar Cells
Guest Edited by Jingbi You (Institute of Semiconductors, CAS, Beijing, China)
J. Semicond. 2017, Vol. 38, Issue 1
Organic/inorganic perovskite materials display unique optoelectronic properties. Recently, the power conversion efficiency of perovskite solar cells (PSCs) reaches record high of 22.1%, and expected to reach more than 25% in the near future by further enlarging the perovskite crystal size and passivating the surface/grain boundary defects, via reducing non-radiative carrier recombination at the interface and/or in the bulk. In this special issue, 5 mini-reviews and 6 research papers are collected to cover the main research topics in PSCs.
2D Materials and Devices
Guest Edited by Jingbo Li (Institute of Semiconductors, CAS, Beijing, China) and Xinran Wang (Nanjing University, Nanjing, China)
J. Semicond. 2017, Vol. 38, Issue 3
2-dimensional (2D) materials have attracted increasing attention in recent years due to novel properties and potential for industrial application. With the rapid developments of both top-down and bottom-up synthesis methods, a lot of new 2D materials beyond graphene have been uncovered, such as BN sheet, silicene, graphdiyne, transition metal chalcogenides and black phosphorus etc. This issue brings along 5 reviews and 7 research papers and discusses the synthesis, properties, band structure modulation, and quantum transport in various 2D materials.
Upcoming and on-going special issues:
• Devices and Circuits for Wearable and IoT Systems Guest Edited by Zhihua Wang (Tsinghua University, Beijing, China), Yong Hei (Institute of Microelectronics, CAS, Beijing, China), and Zhangming Zhu (Xidian University, Xi'an, China)
• Flexible and Wearable Electronics: from Materials to Applications Guest Edited by Guozhen Shen (Institute of Semiconductors, CAS, Beijing, China), Yongfeng Mei (Fudan University, Shanghai, China), Chuan Wang (Michigan State University, East Lansing, MI, USA ), and Taeyoon Lee (Yonsei University, Seoul, South Korea)
• IV-Group Based Low-Dimensional Materials and Devices Guest Edited by Chuanbo Li (Institute of Semiconductors, CAS, Beijing, China), Jinsong Xia (Huazhong University of Science and Technology, Wuhan, China), and Linwei Yu (Nanjing University, Nanjing, China)
• Semiconductor Materials Genome Initiative Guest Edited by Suhuai Wei (Beijing Computational Science Research Center, Beijing, China), Junwei Luo (Institute of Semiconductors, CAS, Beijing, China) and Bing Huang (Beijing Computational Science Research Center, Beijing, China)