Journal of Semiconductors>>2007,Volume 28>>Issue 11:1717-1721  DOI:10.1088/1674-4926/  < Previous Article | Next Article >  
Li Meng and Yu Zhiping.Compact Modeling for Inversion Charge in Nanoscale DG-MOSFETs[J].Journal of Semiconductors,2007,28(11):1717-1721
Compact Modeling for Inversion Charge in Nanoscale DG-MOSFETs
Abstract: A compact model for the integrated inversion charge density Qi in double-gate (DG-) MOSFETs is developed.For nanoscale applications,quantum confinement of the inversion carriers must be taken into account.Based on the previous work of Ge,we establish an expression for the surface potential with respect to Qi,and form an implicit equation,from which Qi can be solved.Results predicted by our model are compared to published data as well as results from Schred,a popular 1D numerical solver that solves the Poisson’s and Schrdinger equations self-consistently.Good agreement is obtained for a wide range of silicon layer thickness,confirming the superiority of this model over previous work in this field.
Keywords: compact model  quantum confinement effect  double-gate MOSFETs
AuthorInstitution
Li Meng Institute of Microelectronics,Tsinghua University,Beijing 100084,China 
Yu Zhiping Institute of Microelectronics,Tsinghua University,Beijing 100084,China 
Received: March 19, 2007 Revised: July 21, 2007
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