Journal of Semiconductors>>2017,Volume 38>>Issue 12:122001-5    < Previous Article | Next Article >  
Olivia M. Berengue and Adenilson J. Chiquito.Direct evidence of traps controlling the carriers transport in SnO2 nanobelts[J].Journal of Semiconductors,2017,38(12):122001-5
Direct evidence of traps controlling the carriers transport in SnO2 nanobelts
Abstract: This work reports on direct evidence of localized states in undoped SnO2 nanobelts. Effects of disorder and electron localization were observed in Schottky barrier dependence on the temperature and in thermally stimulated currents. A transition from thermal activation to hopping transport mechanisms was also observed. The energy levels found by thermally stimulated current experiments were in close agreement with transport data confirming the role of localization in determining the properties of devices.
Keywords: trap  transport  SnO2
Author NameAffiliation
Olivia M. Berengue LCCTnano, Departamento de Fí;sica e Quí;mica - Universidade Estadual Paulista (Unesp), Faculdade de Engenharia de Guaratinguetá;, Câ;mpus Guaratinguetá;, Sã;o Paulo, Brasil 
Adenilson J. Chiquito NanO LaB - Departamento de Fí;sica, Universidade Federal de Sã;o Carlos, CEP 13565-905, CP 676,;o Carlos,;o Paulo, Brasil 
 
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