Journal of Semiconductors>>2017,Volume 38>>Issue 12:125001-8    < Previous Article | Next Article >  
Jiafeng Wang, Xiangning Fan, Xiaoyang Shi and Zhigong Wang.A fractional-N frequency divider for multi-standard wireless transceiver fabricated in 0.18 μm CMOS process[J].Journal of Semiconductors,2017,38(12):125001-8
A fractional-N frequency divider for multi-standard wireless transceiver fabricated in 0.18 μm CMOS process
Abstract: With the rapid evolution of wireless communication technology, integrating various communication modes in a mobile terminal has become the popular trend. Because of this, multi-standard wireless technology is one of the hot spots in current research. This paper presents a wideband fractional-N frequency divider of the multi-standard wireless transceiver for many applications. High-speed divider-by-2 with traditional source-coupled-logic is designed for very wide band usage. Phase switching technique and a chain of divider-by-2/3 are applied to the programmable frequency divider with 0.5 step. The phase noise of the whole frequency synthesizer will be decreased by the narrower step of programmable frequency divider. Δ-Σ modulator is achieved by an improved MASH 1-1-1 structure. This structure has excellent performance in many ways, such as noise, spur and input dynamic range. Fabricated in TSMC 0.18 μm CMOS process, the fractional-N frequency divider occupies a chip area of 1130×510 μm2 and it can correctly divide within the frequency range of 0.8-9 GHz. With 1.8 V supply voltage, its division ratio ranges from 62.5 to 254 and the total current consumption is 29 mA.
Keywords: multi-standard  frequency synthesizer  fractional-N frequency divider  phase switching  Δ-Σ modulator
Author NameAffiliation
Jiafeng Wang Nanjing Research Institute of Electronics Technology, Nanjing 210000, China 
Xiangning Fan Nanjing Research Institute of Electronics Technology, Nanjing 210000, China 
Xiaoyang Shi Nanjing Research Institute of Electronics Technology, Nanjing 210000, China 
Zhigong Wang Nanjing Research Institute of Electronics Technology, Nanjing 210000, China 
 
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