Journal of Semiconductors>>2017,Volume 38>>Issue 10:104005-4    < Previous Article | Next Article >  
Wei Wu and Ning Deng.Memristor interpretations based on constitutive relations[J].Journal of Semiconductors,2017,38(10):104005-4
Memristor interpretations based on constitutive relations
Abstract: The attractive memristor is interpreted based on its constitutive relation. The memory property of the memristor is explained, along with the explanation on its three fingerprints: (1) Pinched hysteresis loop; (2) Hysteresis lobe area decreases as frequency increases; (3) Pinched hysteresis loop shrinks to a single-valued function at infinite frequency. Where the magnetic flux is in Strukov’s memristor is also introduced. Resistive elements including the memristor are taken as an example to argue that the constitutive relation determines the electrical property of a circuit element and diagram method is used to distinguish different elements in the resistive element series.
Keywords: memristor  magnetic flux  constitutive relation  pinched hysteresis loop
Author NameAffiliation
Wei Wu Institute of Microelectronics, Tsinghua University, Beijing 100084, China 
Ning Deng Institute of Microelectronics, Tsinghua University, Beijing 100084, China 
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