Journal of Semiconductors>>2017,Volume 38>>Issue 9:094002-6    < Previous Article | Next Article >  
Yaman Su, Lijuan Yu, Xia Guo, Xing Zhang, Jianguo Liu and Ninghua Zhu.Few-mode vertical-cavity surface-emitting lasers for space-division multiplexing[J].Journal of Semiconductors,2017,38(9):094002-6
Few-mode vertical-cavity surface-emitting lasers for space-division multiplexing
Abstract: In order to choose the proper radius of oxide aperture for few-mode vertical-cavity surface-emitting lasers (VCSELs), the influences of oxide aperture size on the multi-transverse-mode behaviors are investigated in detail. By establishing the effective refractive index model to simulate VCSELs with different radii of oxide apertures, the wavelength and corresponding order of different modes are obtained. VCSELs with three kinds of oxide apertures are manufactured. Then the multi-transverse-mode spectra and near-field are measured. It is found that when the radius is between 1.5 and 4.5 μm, few-mode VCSELs can be implemented. The 2.5 μm VCSEL manufactured in this paper only emits LP01 mode and LP21 mode. Since the space distance between the two modes is 2 μm, it is expected to realize direct-modulation few-mode VCSELs by channel etching or ion implantation between the two modes.
Keywords: few-mode  VCSELs  oxide aperture  space-division multiplexing
Author NameAffiliation
Yaman Su State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing 100049, China 
Lijuan Yu State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China 
Xia Guo School of Electronic Engineering, Beijing University of Posts and Telecommunications, Beijing 100876, China 
Xing Zhang Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China 
Jianguo Liu State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing 100049, China 
Ninghua Zhu State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing 100049, China 
 
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