Journal of Semiconductors>>2017,Volume 38>>Issue 12:124004-6    < Previous Article | Next Article >  
Guifeng Chen, Mengxue Wang, Wenxian Yang, Ming Tan, Yuanyuan Wu, Pan Dai, Yuyang Huang and Shulong Lu.Optical properties of Zn-diffused InP layers for the planar-type InGaAs/InP photodetectors[J].Journal of Semiconductors,2017,38(12):124004-6
Optical properties of Zn-diffused InP layers for the planar-type InGaAs/InP photodetectors
Abstract: Zn diffusion into InP was carried out ex-situ using a new Zn diffusion technique with zinc phosphorus particles placed around InP materials as zinc source in a semi-closed chamber formed by a modified diffusion furnace. The optical characteristics of the Zn-diffused InP layer for the planar-type InGaAs/InP PIN photodetectors grown by molecular beam epitaxy (MBE) has been investigated by photoluminescence (PL) measurements. The temperature-dependent PL spectrum of Zn-diffused InP samples at different diffusion temperatures showed that band-to-acceptor transition dominates the PL emission, which indicates that Zn was commendably diffused into InP layer as the acceptor. High quality Zn-diffused InP layer with typically smooth surface was obtained at 580 ℃ for 10 min. Furthermore, more interstitial Zn atoms were activated to act as acceptors after a rapid annealing process. Based on the above Zn-diffusion technique, a 50 μm planar-type InGaAs/InP PIN photodector device was fabricated and exhibited a low dark current of 7.73 pA under a reverse bias potential of -5 V and a high breakdown voltage of larger than 41 V (I < 10 μA). In addition, a high responsivity of 0.81 A/W at 1.31 μm and 0.97 A/W at 1.55 μm was obtained in the developed PIN photodetector.
Keywords: Zn diffusion  semi-closed  InGaAs/InP PIN photodetectors  photoluminescence (PL)  dark current  responsivity
Author NameAffiliation
Guifeng Chen Key Laboratory for New Type of Functional Materials in Hebei Province, School of Material and Engineering, Hebei University of Technology, Tianjin 300130, China 
Mengxue Wang Key Laboratory for New Type of Functional Materials in Hebei Province, School of Material and Engineering, Hebei University of Technology, Tianjin 300130, China;Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China 
Wenxian Yang Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China 
Ming Tan Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China 
Yuanyuan Wu Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China 
Pan Dai Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China 
Yuyang Huang Suna optoelectronics, Suzhou 215123, China 
Shulong Lu Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China 
 
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