Journal of Semiconductors>>2017,Volume 38>>Issue 12:124006-5    < Previous Article | Next Article >  
Zhaohuan Tang, Xinghua Fu, Fashun Yang, Kaizhou Tan, Kui Ma, Xue Wu and Jiexing Lin.SEGR- and SEB-hardened structure with DSPSOI in power MOSFETs[J].Journal of Semiconductors,2017,38(12):124006-5
SEGR- and SEB-hardened structure with DSPSOI in power MOSFETs
Abstract: Single event irradiation-hardened power MOSFET is the most important device for DC/DC converter in space environment application. Single event gate rupture (SEGR) and single event burnout (SEB), which will degrade the running safety and reliability of spacecraft, are the two typical failure modes in power MOSFETs. In this paper, based on recombination mechanism of interface between oxide and silicon, a novel hardened power MOSFETs structure for SEGR and SEB is proposed. The structure comprises double stagger partial silicon-on-insulator (DSPSOI) layers. Results show that the safety operation area (SOA) of a 130 V N-channel power MOSFET in single event irradiation environment is enhanced by up to 50% when the linear-energy-transfer value of heavy ion is a constant of 98 MeV·cm2/mg in the whole incident track, and the other parameters are almost maintained at the same value. Thus this novel structure can be widely used in designing single event irradiation-hardened power MOSFETs.
Keywords: power MOSFETs  partial silicon-on-insulator  single event gate rupture  single event burnout
Author NameAffiliation
Zhaohuan Tang College of Big Data and Information Engineering, Guizhou University, Guiyang 550025, China;Science and Technology on Analog Integrated Circuit Laboratory, Chongqing 400060, China 
Xinghua Fu College of Big Data and Information Engineering, Guizhou University, Guiyang 550025, China 
Fashun Yang College of Big Data and Information Engineering, Guizhou University, Guiyang 550025, China 
Kaizhou Tan Science and Technology on Analog Integrated Circuit Laboratory, Chongqing 400060, China 
Kui Ma College of Big Data and Information Engineering, Guizhou University, Guiyang 550025, China 
Xue Wu Science and Technology on Analog Integrated Circuit Laboratory, Chongqing 400060, China 
Jiexing Lin College of Big Data and Information Engineering, Guizhou University, Guiyang 550025, China 
 
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