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  • Some recent advances in ab initio calculations of nonradiative decay rates of point defects in semiconductors

    Lin-Wang Wang

    Available online

    Abstract Full Text PDF

    In this short review, we discuss a few recent advances in calculating the nonradiative decay rates for point defects in semiconductors. We briefly review the debates and connections of using different formalisms to calculate the multi-phonon processes. We connect Dr. Huang’s formula with Marcus theory formula in the high temperature limit, and point out that Huang’s formula provide an analytical expression for the phonon induced electron coupling constant in the Marcus theory formula. We also discussed the validity of 1D formula in dealing with the electron transition processes, and practical ways to correct the anharmonic effects.

  • Major scientific accomplishments of Prof. Kun Huang

    Jian-Bai Xia

    Available online

    doi: 10.1088/1674-4926/40/7/090301

    Abstract Full Text PDF Get Citation

    The 100th anniversary of the birth of Prof. Kun Huang is in this year. Prof. Huang is a paragon of the older generation of Chinese scientists. He hadmade great achievements in solid state physics. After the founding of the People’s Republic of China, he returned to China immediately, and devoted himself to education. He and Prof. Xide Xie initiated the research of semiconductors in China, and established the solid state physics major at Peking University, which has trained a large number of talents for China. In 1977, he became the director of the Institute of Semiconductors of the Chinese Academy of Sciences. Led by Prof. Huang, together with Prof. Shouwu Wang, Prof. Lanying Lin and Prof. Shoujue Wang, the semiconductor institute independently overcomes many difficulties and created a group of critical deviceswhich were on international embargo but urgently needed by China. Furthermore, he also made new contributions in the field of semiconductor superlattices. Under his leadership, the State Key Laboratory of Semiconductor Superlattices became one of the internationally leading laboratories. The following are the major scientific contributions of Prof. Kun Huang.

  • Lattice vibration and Raman scattering of two-dimensional van der Waals heterostructure

    Xin Cong, Miao-Ling Lin, Ping-Heng Tan

    Available online

    Abstract Full Text PDF

    Research on two-dimensional (2D) materials and related van der Waals heterostructures (vdWHs) is intense and remains one of the leading topics in condensed matter physics. Lattice vibration or phonons of a vdWH provide its rich information, such as lattice structure, phonon dispersion, electronic band structure and electron-phonon coupling. Here, we provide a mini review on the lattice vibrations in vdWHs probed by Raman spectroscopy. First, we introduced different kinds of vdWHs, including their structures, properties and potential applications. Second, we discussed interlayer and intralayer phonon in twist multilayer graphene and MoS2. The frequencies of interlayer and intralayer modes can be reproduced by linear chain model (LCM) and phonon folding induced by periodical moiré potentials, respectively. Then, we extended LCM to vdWHs formed by distinct 2D materials, such as MoS2/Graphene and hBN/WS2 heterostructures. We further demonstrated how to calculate Raman intensity of interlayer modes in vdWHs by interlayer polarizability model.

  • A gate-free MoS2 phototransistor assisted by ferroelectric domain

    Shuaiqin Wu, Guangjian Wu, Xudong Wang, Yan Chen, Tie Lin, Hong Shen, Weida Hu, Xiangjian Meng, Jianlu Wang, Junhao Chu

    Available online

    Abstract Full Text PDF

    During the past decades, transition metal dichalcogenides (TMDs) have received special focus for their unique properties in photoelectric detection. As one important member of TMDs, MoS2 has been made into photodetector purely or combined with other materials, such as graphene, ionic liquid, and ferroelectric materials. Here, we report a gate-free MoS2 phototransistor combined with organic ferroelectric material poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)). In this device, the remnant polarization field in P(VDF-TrFE) is obtained from the piezoelectric force microscope (PFM) probe with a positive or negative bias, which can turn the dipoles from disorder to be the same direction. Then, the MoS2 channel can be maintained at an accumulated state with downward polarization field modulation and a depleted state with upward polarization field modulation. Moreover, the P(VDF-TrFE) segregates MoS2 from oxygen and water molecules around surroundings, which enables a cleaner surface state. As a photodetector, an ultra-low dark current of 10–11 A, on/off ration of more than 104 and a fast photoresponse time of 120 μs are achieved. This work provides a new method to make high-performance phototransistors assisted by the ferroelectric domain which can operate without a gate electrode and demonstrates great potential for ultra-low power consumption applications.

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