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Just Accepted manuscripts are peer-reviewed and accepted for publication. They are posted online prior to technical editing formatting for publication and author proofing.

  • Electrical contacts to two-dimensional transition-metal dichalcogenides

    Shuxian Wang, Zhihao Yu, Xinran Wang

    Available online

    doi: 10.1088/1674-4926/39/12/124001

    Abstract Full Text PDF Get Citation

    Two-dimensional (2D) transition-metal dichalcogenides (TMDCs) have attracted enormous interests as the novel channel materials for atomically thin transistors. Despite considerable progress in recent years, the transistor performance is largely limited by the excessive contact resistance at the source/drain interface. In this review, a summary of recent progress on improving electrical contact to TMDC transistors is presented. Several important strategies including topology of contacts, choice of metals and interface engineering are discussed.

  • The effect of oxygen on the epitaxial growth of diamond

    Meng Gong, Yanan Chen, Wancheng Yu, Peng Jin, Zhanguo Wang, Zhimin Wang, Shenjin Zhang, Feng Yang, Fengfeng Zhang, Qinjun Peng, Zuyan Xu

    Available online

    Abstract Full Text PDF

    We studied the effect of oxygen on the growth quality of diamond epitaxial layers. After oxygen is added during the growth of the diamond epitaxial layer, as the thickness of the epitaxial layer increases, the full width at half maximum of the rocking curve of the (004) plane of diamond epitaxial layer increases continuously, and, in addition, the intensities of both the Raman peaks and the free exciton emission peaks of the diamond epitaxial layer decrease continuously. These experimental results demonstrate that as the thickness of the diamond epitaxial layer increases, the quality of the diamond epitaxial layer degrades. The strong etching effect of the OH radical groups in the plasma on the diamond epilayers leads to the degradation of their crystallinity.

  • Simulation study of a 4H-SiC lateral BJT for monolithic power integration

    Shiwei Liang, Jun Wang, Fang Fang, Linfeng Deng

    Available online

    Abstract Full Text PDF

    Power integration based on 4H-SiC is a very promising technology for high-frequency and high-temperature power electronics applications. However, the fabrication processes used in Si BiCMOS technology is not applicable in 4H-SiC at present, and few studies on the monolithic power integration of the SiC signal devices and power devices have been reported. In this paper, we propose a novel lateral BJT structure, which is suitable for monolithically integrating with the vertical power BJT on the same epitaxial wafer at the cost of one additional mask. The signal BJT’s static and dynamic characteristics are comprehensively investigated by TCAD simulation. Simulation results show that the common-emitter current gains of the 4H-SiC signal BJT are 133 and 52 at room temperature and 300 °C, respectively. Its implementation in an inverter shows that its switching time is about 200 ns.

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