Just Accepted

Just Accepted manuscripts are peer-reviewed and accepted for publication. They are posted online prior to technical editing formatting for publication and author proofing.

  • A novel 4H-SiC trench MOSFET with double shielding structures and ultralow gate-drain charge

    Xiaorong Luo, Tian Liao, Jie Wei, Jian Fang, Fei Yang, Bo Zhang

    Available online

    Abstract Full Text PDF

    A new ultralow gate–drain charge (QGD) 4H-SiC trench MOSFET is presented and its mechanism is investigated by simulation. The novel MOSFET features double shielding structures (DS-MOS): one is the grounded split gate (SG), the other is the P+ shielding region (PSR). Both the SG and the PSR reduce the coupling effect between the gate and the drain, and transform the most part of the gate-drain capacitance (CGD) into the gate-source capacitance (CGS) and drain-source capacitance (CDS) in series. Thus the CGD is reduced and the proposed DS-MOS obtains ultralow QGD. Compared with the double-trench MOSFET (DT-MOS) and the conventional trench MOSFET (CT-MOS), the proposed DS-MOS decreases the QGD by 85% and 81%, respectively. Moreover, the Fig. of merit (FOM), defined as the product of specific on-resistance (Ron, sp) and QGD (Ron, spQGD), is reduced by 84% and 81%, respectively.

  • Structural and optical studies on PVA capped SnS films grown by chemical bath deposition for solar cell application

    P Mallika Bramaramba Devi, G. Phaneendra Reddy, K. T. Ramakrishna Reddy

    Available online

    Abstract Full Text PDF

    Tin monosulphide (SnS) thin films capped by PVA have been successfully deposited on glass substrates for cost effective photovoltaic device applications by a simple and low-cost wet chemical process, chemical bath deposition (CBD) at different bath temperatures varying in the range, 50–80 °C. X–ray diffraction analysis showed that the deposited films were polycrystalline in nature, showing orthorhombic structure with an intense peak corresponding to (040) plane of SnS. These observations were further confirmed by Raman analysis. FTIR spectra showed the absorption bands which corresponds to PVA in addition to SnS. The scanning electron microscopy and atomic force microscopy studies revealed that the deposited SnS films were uniform and nanostructured with an average particle size of 4.9 to 7.6 nm. The optical investigations showed that the layers were highly absorbing with the optical absorption coefficient ~105cm–1. A decrease in optical band gap from 1.92 to 1.55 eV with an increase of bath temperature was observed. The observed band gap values were higher than the bulk value of 1.3 eV, which might be due to quantum confinement effect. The optical band gap values were also used to calculate particle size and the results are discussed.

  • Heteroepitaxy of semiconductor thin films

    Gu Yi

    Available online

    Abstract Full Text PDF


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