2019年JOS入选“中国科技期刊卓越行动计划”
2020年11月JOS被EI数据库收录
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喜讯!半导体学报成功被EI收录!

Just Accepted

Just Accepted manuscripts are peer-reviewed and accepted for publication. They are posted online prior to technical editing formatting for publication and author proofing.

  • Instability of parasitic capacitance in T-shape-gate enhancement-mode AlGaN/GaN MIS-HEMTs

    Lan Bi, Yixu Yao, Qimeng Jiang, Sen Huang, Xinhua Wang, Hao Jin, Xinyue Dai, Zhengyuan Xu, Jie Fan, Haibo Yin, Ke Wei, Xinyu Liu

    Available online

    Abstract Full Text PDF

    Parasitic capacitances associated with overhangs of the T-shape-gate enhancement-mode (E-mode) GaN-based power device, were investigated by frequency/voltage-dependent capacitance–voltage and inductive-load switching measurements. The overhang capacitances induce a pinch-off voltage distinguished from that of the E-mode channel capacitance in the gate capacitance CG and the gate-drain capacitance CGD characteristic curves. Frequency- and voltage-dependent tests confirm the instability caused by the trapping of interface/bulk states in the LPCVD-SiNx passivation dielectric. Circuit-level double pulse measurement also reveals its impact on switching transition for power switching applications.

  • A review of compact modeling for phase change memory

    Feilong Ding, Baokang Peng, Xi Li, Lining Zhang, Runsheng Wang, Zhitang Song, Ru Huang

    Available online

    Abstract Full Text PDF

    Phase change memory (PCM) attracts wide attention for the memory-centric computing and neuromorphic computing. For circuit and system designs, PCM compact models are mandatory and their status are reviewed in this work. Macro models and physics-based models have been proposed in different stages of the PCM technology developments. Compact modeling of PCM is indeed more complex than the transistor modeling due to their multi-physics nature including electrical, thermal and phase transition dynamics as well as their interactions. Realizations of the PCM operations including threshold switching, set and reset programming in these models are diverse, which also differs from the perspective of circuit simulations. For the purpose of efficient and reliable designs of the PCM technology, open issues and challenges of the compact modeling are also discussed.

  • Tunable crystal structure of Cu–Zn–Sn–S nanocrystals for improving photocatalytic hydrogen evolution enabled by copper element regulation

    Zhe Yin, Min Hu, Jun Liu, Hao Fu, Zhijie Wang, Aiwei Tang

    Available online

    Abstract Full Text PDF

    Hydrogen energy is a powerful and efficient energy resource, which can be produced by photocatalytic water splitting. Among the photocatalysis, multinary copper-based chalcogenide semiconductor nanocrystals exhibit great potential due to their tunable crystal structures, adjustable optical band gap, eco-friendly, and abundant resources. In this paper, Cu–Zn–Sn–S (CZTS) nanocrystals with different Cu content have been synthesized by using the one-pot method. By regulating the surface ligands, the reaction temperature, and the Cu content, kesterite and hexagonal wurtzite CZTS nanocrystals were obtained. The critical factors for the controllable transition between two phases were discussed. Subsequently, a series of quaternary CZTS nanocrystals with different Cu content were used for photocatalytic hydrogen evolution. And their band gap, energy level structure, and charge transfer ability were compared comprehensively. As a result, the pure hexagonal wurtzite CZTS nanocrystals have exhibited an improved photocatalytic hydrogen evolution activity.

  • 2D arsenenes

    Yi Hu, Junchuan Liang, Lixiu Zhang, Zhong Jin, Liming Ding

    Available online

    doi: 10.1088/1674-4926/43/3/030201

    Abstract Full Text PDF Get Citation

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