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Just Accepted manuscripts are peer-reviewed and accepted for publication. They are posted online prior to technical editing formatting for publication and author proofing.

  • Improve the data retention of phase change memory by doping element in selected Ge2Sb2Te5

    Yaoyao Lu, Daolin Cai, Yifeng Chen, Shuai Yan, Lei Wu, Yuanguang Liu, Yang Li, Zhitang Song

    Available online

    Abstract Full Text PDF

    The crystallization characteristics of ubiquitous T-shaped phase change memory (PCM) cell, under SET current pulse as well as very small disturb current pulse, have been investigated by finite element modelling. As analyzed in this paper, the crystallization region under SET current pulse presents firstly on the corner of the bottom electron contact (BEC) and then promptly forms a filament shunting down the amorphous phase to achieve the low-resistance state, whereas the tiny disturb current pulse accelerates crystallization at the axis of symmetry in the phase change material. According to the different crystallization paths, a new structure of phase change material layer is proposed to improve the data retention for PCM without impeding SET operation. This structure only requires one or two additional process steps to dope nitrogen element in the center region of phase change material layer to increase the crystallization temperature in this confined region. The electrical-thermal characteristics of PCM cells with incremental doped radius have been analyzed, acquiring that the best performance would be presented when doped radius is equal to the radius of BEC.

  • A novel channel engineered continuous floating gate MOSFET for memory applications

    Neha Barothiya, Chetan T. Dabhi, Ganesh C. Patil

    Available online

    Abstract Full Text PDF

    In this paper, using sentaurus two dimensional (2D) technology computer-aided design (TCAD) simulator silicon-on-insulator (SOI) continuous floating gate MOSFET with underlap channel (und-SOICONTFG) has been proposed. It has been found that, the underlap channel at gate-source/drain of und-SOICONTFG leads to significant reduction in short-channel effects, gate induced drain leakage, off-state leakage and the parasitic capacitances. Further, capacitive coupling ratio and the memory window of proposed device are improved by ~13% and ~20% respectively over the conventional overlap channel continuous floating gate MOSFET (conv-CONTFG). In addition to this, static power dissipation in the proposed und-SOICONTFG device reduces significantly over the conv-CONTFG device. Thus, employing underlap channel at source/drain of continuous floating gate SOI MOSFET makes it a promising device for memory applications.

  • Photoluminescene study acceptor defects in lightly doped n type GaSb single crystals

    Guiying Shen, Youwen Zhao, Yongbiao Bai, Jingming Liu, Hui Xie, Zhiyuan Dong, Jun Yang, Ding Yu

    Available online

    Abstract Full Text PDF

    Lightly Te-doped GaSb samples grown by liquid encapsulated Czochralski (LEC) method have been studied by Hall measurements and low-temperature PL spectroscopy. The results suggest that acceptor-related antisite is the dominant defect in n type GaSb with low Te doping concentration. With the increasing of Te concentration, gallium vacancy related defects become the main acceptor. A new band around 665meV is observed in the GaSb sample with the lowest Te doping concentration. The variation of the acceptor defects and their influence on the electronic and optical property on the n-GaSb single crystal are discussed based on the results.

  • Healthcare electronic skin devices

    Quan Yuan, Zhong Ma, Sheng Li, Lijia Pan

    Available online

    doi: 10.1088/1674-4926/40/3/030401

    Abstract Full Text PDF Get Citation

  • High density three dimensional integration of organic transistors

    Available online

    doi: 10.1088/1674-4926/40/2/030201

    Abstract Full Text PDF Get Citation

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