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2019年JOS入选“中国科技期刊卓越行动计划”
Just Accepted

Just Accepted manuscripts are peer-reviewed and accepted for publication. They are posted online prior to technical editing formatting for publication and author proofing.

  • Comparative study of various methods for extraction of multi quantum wells Schottky diode parameters

    Elyes Garoudja, Walid Filali, Slimane Oussalah, Noureddine Sengouga, Mohamed Henini

    Available online

    Abstract Full Text PDF

    In this work, forward current voltage characteristics for multi quantum wells Al0.33Ga0.67As Schottky diode were measured at temperature ranges from 100 to 300 K. The main parameters of this Schottky diode, such as the ideality factor, barrier height, series resistance and saturation current, have been extracted using both analytical and heuristics methods. differential evolution (DE), particle swarm optimization (PSO) and artificial bee colony (ABC) have been chosen as candidate heuristics algorithms, while Cheung technic was selected as analytical extraction method. The obtained results show clearly the high performance of DE algorithms in terms of parameters accuracy, convergence speed and robustness.

  • Flexible Sensors based on Hybrid Materials

    Zhihui Ren, Dongchen Qi, Prashant Sonar, Zhongming Wei

    Available online

    doi: 10.1088/1674-4926/41/04/040402

    Abstract Full Text PDF Get Citation

  • Study of electrophysical properties of metal-semiconductor contact by the theory of complex systems

    Sh. G. Askerov, L. K. Abdullayeva, M.G. Hasanov

    Available online

    Abstract Full Text PDF

    The purpose of this work is to analyze the electrical properties of the metal-semiconductor contact (MSC) in the framework of the theory of complex systems. The effect of inhomogeneity of the different microstructures: polycrystalline, monocrystalline, amorphous metal-semiconductor contact surface is investigated, considering a Schottky diode (SD) as a parallel connection of numerous subdiodes. It has been shown that the polycrystallinity of the metal translates a homogeneous contact into a complex system, which consists of parallel connected numerous elementary contacts having different properties and parameters.

  • Tubular/helical architectures construction based on rolled-up AlN nanomembranes and resonance as optical microcavity

    Jinyu Yang, Yang Wang, Lu Wang, Ziao Tian, Zengfeng Di, Yongfeng Mei

    Available online

    Abstract Full Text PDF

    Aluminum nitride (AlN) has attracted a great amount of interest due to the fact that these group III–V semiconductors present direct band gap behavior and are compatible with current micro-electro-mechanical systems. In this work, three dimensional (3D) AlN architectures including tubes and helices were constructed by rolling up AlN nanomembranes grown on a silicon-on-insulator wafer via magnetron sputtering. The properties of the AlN membrane were characterized through transmission electron microscopy and X-ray diffraction. The thickness of AlN nanomembranes could be tuned via the RIE thinning method, and thus micro-tubes with different diameters were fabricated. The intrinsic strain in AlN membranes was investigated via micro-Raman spectroscopy, which agrees well with theory prediction. Whispering gallery mode was observed in AlN tubular optical microcavity in photoluminescence spectrum. A postprocess involving atomic layer deposition and R6G immersion were employed on as-fabricated AlN tubes to promote the Q-factor. The AlN tubular micro-resonators could offer a novel design route for Si-based integrated light sources. In addition, the rolled-up technology paves a new way for AlN 3D structure fabrication, which is promising for AlN application in MEMS and photonics fields.

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