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  • The simple two-step polydimethylsiloxane transferring process for high aspect ratio microstructures

    Shaoxi Wang, Dan Feng, Chenxia Hu, P. Rezai

    Available online

    doi: 10.1088/1674-4926/39/8/086001

    Abstract Full Text PDF Get Citation

    High aspect ratio units are necessary parts of complex microstructures in microfluidic devices. Some methods that are available to achieve a high aspect ratio require expensive materials or complex chemical processes; for other methods it is difficult to reach simple high aspect ratio structures, which need supporting structures. The paper presents a simple and cheap two-step Polydimethylsioxane (PDMS) transferring process to get high aspect ratio single pillars, which only requires covering the PDMS mold with a Brij@52 surface solution after getting a relative PDMS mold based on an SU8 mold. The experimental results demonstrate the method efficiency and effectiveness.

  • Surface and optical properties of silicon nitride deposited by inductively coupled plasma-chemical vapor deposition

    Yi Zhu, Xingyou Chen, Yingjie Ma, Yonggang Zhang, Ben Du, Yanhui Shi, Yi Gu

    Available online

    doi: 10.1088/1674-4926/39/8/083005

    Abstract Full Text PDF Get Citation

    The surface and optical properties of silicon nitride samples with different compositions were investigated. The samples were deposited on InP by inductively coupled plasma chemical vapor deposition using different NH3 flow rates. Atomic force microscopy measurements show that the surface roughness is increased for the samples with both low and high NH3 flow rates. By optimization, when the NH3 flow rate is 6 sccm, a smooth surface with RMS roughness of 0.74 nm over a 5 × 5 μm2 area has been achieved. X-ray photoelectron spectroscopy measurements reveal the Si/N ratio of the samples as a function of NH3 flow rate. It is found that amorphous silicon is dominant in the samples with low NH3 flow rates, which is also proved in Raman measurements. The bonding energies of the Si and N atoms have been extracted and analyzed. Results show that the bonding states of Si atoms transfer from Si0 to Si+4 as the NH3 flow rate increases.

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