2019年JOS入选“中国科技期刊卓越行动计划”
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Just Accepted manuscripts are peer-reviewed and accepted for publication. They are posted online prior to technical editing formatting for publication and author proofing.

  • Research on the photoluminescence of spectral broadening by rapid thermal annealing on InAs/GaAs quantum dots

    Dandan Ning, Yanan Chen, Xinkun Li, Dechun Liang, Shufang Ma, Peng Jin, Zhanguo Wang

    Available online

    Abstract Full Text PDF

    A photoluminescence (PL) test was conducted to investigate the effect of rapid thermal annealing (RTA) on the optical performance of self-assembled InAs/GaAs quantum dots (QDs) at the temperatures of 16 and 300 K. It was found that after RTA treatment, the PL spectrum of the QDs sample had a large blue-shift and significantly broadened at 300 K. Compared with the as-grown InAs QDs sample, the PL spectral width has increased by 44.68 meV in the InAs QDs sample RTA-treated at 800 °C. The excitation power-dependent PL measurements showed that the broadening of the PL peaks of the RTA-treated InAs QDs should be related to the emission of the ground state (GS) of different-sized InAs QDs, the InAs wetting layer (WL) and the In0.15Ga0.85As strain reduction layer (SRL) in the epitaxial InAs/GaAs layers.

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