Qingqing Wang, Yun Zheng, Chonghao Zhai, Xudong Li, Qihuang Gong, Jianwei Wang. Chip-based quantum communications[J]. Journal of Semiconductors, 2021, 42(9): 091901. doi: 10.1088/1674-4926/42/9/091901.
Q Q Wang, Y Zheng, C H Zhai, X D Li, Q H Gong, J W Wang, Chip-based quantum communications[J]. J. Semicond., 2021, 42(9): 091901. doi: 10.1088/1674-4926/42/9/091901.
Export: BibTex EndNote
Metal halide perovskites (MHPs) have become promising optoelectronic materials due to their long carrier lifetimes and high mobility. However, the presence of defects and ion migration in MHPs results in high and unstable dark currents, which compromise the stability and detection performance of MHP-based optoelectronic devices. Interfacial engineering has proven to be an effective strategy to reduce defect density in MHPs and suppress ion migration. Given the compatibility of silicon (Si) and MHP processing technologies, coupled with the simplicity and cost-effectiveness of the approach, the integration of MHPs onto Si surfaces has become a prominent area of research. This integration not only enhances device performance but also expands their practical applications. This review provides an overview of the integration technologies for Si and single crystal MHPs, evaluates the advantages and limitations of various integration schemes (including inverse temperature crystallization, vacuum-assisted vapor deposition, and anti-solvent vapor-assisted crystallization), and explores the practical applications of Si/MHP-integrated optoelectronic devices with different structures. These optimized devices exhibit outstanding performance in X-ray detection, multi-wavelength photodetection, and circularly polarized light detection. This review provides a systematic reference for technological innovation and application expansion of Si/MHP-integrated devices.