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Characterization of the triple-gate flash memory endurancedegradation mechanism

Cao Zigui, Sun Ling and Lee Elton

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Abstract: Write/erase degradation after endurance cycling due to electron trapping events in triple-gate flash memory have been detected and analyzed using a UV erasure method. Different from the commonly degradation phenomenon, write-induced electron trapping in the floating gate oxide, electron trapping in tunneling oxide is observed in triple-gate flash memory. Further, the degradation due to single-electron locally trapping/de-trapping in horn-shaped SuperFlash does not occur in the triple-gate flash cell. This is because of planar poly-to-poly erasing in the triple-gate flash cell instead of tip erasing in the horn-shaped SuperFlash cell. Moreover, by TCAD simulation, the trap location is identified and the magnitude of its density is quantified roughly.

Key words: Fowler-Nordheim tunneling endurance traps UV erasure

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    Received: 18 August 2015 Revised: Online: Published: 01 January 2009

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      Cao Zigui, Sun Ling, Lee Elton. Characterization of the triple-gate flash memory endurancedegradation mechanism[J]. Journal of Semiconductors, 2009, 30(1): 014003. doi: 10.1088/1674-4926/30/1/014003 Cao Z G, Sun L, Lee E. Characterization of the triple-gate flash memory endurancedegradation mechanism[J]. J. Semicond., 2009, 30(1): 014003. doi: 10.1088/1674-4926/30/1/014003.Export: BibTex EndNote
      Citation:
      Cao Zigui, Sun Ling, Lee Elton. Characterization of the triple-gate flash memory endurancedegradation mechanism[J]. Journal of Semiconductors, 2009, 30(1): 014003. doi: 10.1088/1674-4926/30/1/014003

      Cao Z G, Sun L, Lee E. Characterization of the triple-gate flash memory endurancedegradation mechanism[J]. J. Semicond., 2009, 30(1): 014003. doi: 10.1088/1674-4926/30/1/014003.
      Export: BibTex EndNote

      Characterization of the triple-gate flash memory endurancedegradation mechanism

      doi: 10.1088/1674-4926/30/1/014003
      • Received Date: 2015-08-18

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